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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW13NB60

Name: STW13NB60
Brand: STMicroelectronics
SKU: STW13NB60
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW13NB60

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW13NB60.pdf

Description:: MOSFET N-CH 600V 13A TO247-3

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Product details

Overview

STW13NB60 from STMicroelectronics is an N-channel 600 V, 13 A PowerMESH™ MOSFET in TO-247 package with R_DS(on) = 0.48 Ω (typ), 100% avalanche tested, and extremely high dv/dt capability (4 V/ns). It serves as a high-speed, high-current switching device in primary-side SMPS, welding inverters, and UPS DC-AC stages where ruggedness and low conduction loss are critical.

For engineers reviewing the STW13NB60 datasheet, STW13NB60 pinout, STW13NB60 application, or STW13NB60 equivalent, key selection criteria include its 600 V V_DSS, 0.48 Ω R_DS(on), 52 A pulsed drain current, 700 mJ single-pulse avalanche energy, and TO-247 thermal resistance of 0.66 °C/W - all validated for industrial hard-switching environments.

Technical Context

This MOSFET employs ST's proprietary high-voltage MESH OVERLAY™ process with strip layout and edge termination, delivering lowest R_DS(on) per die area and exceptional unclamped inductive switching robustness. Its gate charge is minimized (Q_g = 58 nC, Q_gd = 23 nC) to reduce switching losses while maintaining high dv/dt immunity (4 V/ns) under fast diode recovery.

The device integrates a fast, low-loss body diode (V_SD = 1.6 V at 13 A, t_rr = 630 ns, Q_rr = 6.8 µC) optimized for synchronous rectification and freewheeling in bridge topologies. Thermal design is supported by a low junction-to-case resistance (0.66 °C/W) in the TO-247 package, enabling high-power operation up to 150 °C junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - Withstands 600 V drain-source blocking voltage, suitable for 400 V DC bus applications with margin.
R_DS(on)	0.48 Ω (typ) - Enables low conduction loss (≤ 810 mW at 13 A DC) and reduced heatsink requirements.
I_D (cont)	13 A at T_c = 25 °C - Supports continuous high-current switching in forced-air-cooled power stages.
E_AS	700 mJ - Rated single-pulse avalanche energy ensures reliability during transient overloads without external snubbers.
Q_g	58 nC - Low total gate charge enables efficient drive with standard gate drivers (e.g., IR2110) at 100 kHz+.
t_rr	630 ns - Fast body diode recovery minimizes cross-conduction loss in half-bridge and full-bridge inverters.
R_thj-case	0.66 °C/W - Enables 190 W dissipation at T_c = 25 °C, supporting high-power density designs.

Pinout & Package

TO-247 package: isolated metal tab (drain), 3-pin through-hole configuration with industry-standard footprint and mounting hole. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives 10 V logic-level drive; threshold voltage 3–5 V enables compatibility with microcontroller GPIOs via level-shifting.
Pin 2 (Drain)	High-voltage power output	Connected to metal tab - electrically tied to drain; requires insulated mounting hardware for floating applications.
Pin 3 (Source)	Power return / reference node	Serves as local ground reference for gate drive; must be low-inductance path to minimize ringing during switching.

Key Features

Feature	Design Value
PowerMESH™ process	Delivers lowest R_DS(on) per unit area among 600 V MOSFETs, reducing die size and cost without sacrificing ruggedness.
100% avalanche tested	Each unit undergoes unclamped inductive switching stress test - guarantees reliable operation under worst-case fault conditions.
Extremely high dv/dt capability	Rated 4 V/ns - suppresses false turn-on in noisy high-di/dt environments like motor drives and welders.
Minimized intrinsic capacitances	C_iss = 2600 pF, C_oss = 325 pF - reduces Miller effect and improves EMI performance in hard-switched converters.
Low gate charge	Q_g = 58 nC, Q_gd/Q_g = 40% - enables faster switching transitions and lower driver power consumption.

Applications

Industrial SMPS Primary Switch

UPS Inverter Output Stage

Use Scenario: High-efficiency 1–3 kW offline flyback or LLC resonant converter operating from 380–400 V DC bus.

IC Role / Device Role / Timing Role: Main high-side switching element handling full load current and voltage stress during PWM cycles.

Use Value: 0.48 Ω R_DS(on) and 700 mJ E_AS enable >92% efficiency and no-snubber operation under line transients.

Use Scenario: Three-phase IGBT/MOSFET inverter stage in 5–10 kVA uninterruptible power supply delivering clean 230 V AC output.

IC Role / Device Role / Timing Role: Low-side switch in two-level inverter leg, commutating 13 A RMS current at 4–16 kHz PWM frequency.

Use Value: Fast 630 ns body diode recovery and 4 V/ns dv/dt rating prevent shoot-through and ensure stable dead-time behavior.

DC-AC Welding Inverter

Motor Drive Half-Bridge

Use Scenario: High-current DC-AC inverter feeding transformer-coupled arc load in industrial stick/TIG welders (output 20–300 A).

IC Role / Device Role / Timing Role: Hard-switched power switch in full-bridge topology operating at 20–50 kHz with high di/dt (>100 A/µs).

Use Value: 100% avalanche testing and 4 V/ns dv/dt immunity ensure survival during arc ignition transients and short-circuit events.

Use Scenario: 1–5 kW variable-frequency drive for induction motors in HVAC and pump systems.

IC Role / Device Role / Timing Role: Upper-leg switch in half-bridge configuration driving motor phase voltage with 13 A peak current.

Use Value: TO-247 package with 0.66 °C/W R_thj-case allows sustained 13 A operation with passive heatsinking, eliminating need for active cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW20NB60	Higher I_D (20 A), higher R_DS(on) (0.36 Ω typ), same V_DSS, TO-247 package	Better suited for higher-current, lower-R_DS(on) designs where thermal headroom exists	Select when system requires >13 A continuous current and can accommodate larger gate drive energy (Q_g = 85 nC)
FQP13N60C	Same V_DSS and I_D, higher R_DS(on) (0.55 Ω max), TO-220FP package, no avalanche rating	Limited to lower-power, cost-sensitive consumer-grade SMPS without fault robustness requirements	Choose only for non-critical, low-volume applications where avalanche immunity and dv/dt rating are not required

Compared with STW20NB60 and FQP13N60C, STW13NB60 offers optimal balance of ruggedness (100% avalanche tested), thermal performance (0.66 °C/W), and gate drive efficiency (58 nC) for mid-power industrial inverters and SMPS where reliability trumps raw current rating.

Availability

STW13NB60 is available at Aetrix Electronics and suitable for switch-mode power supplies, uninterruptible power systems, welding inverters, and motor drives requiring stable component supply and long-term industrial lifecycle support.

Supply support for STW13NB60 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, digital, and mixed-signal ICs and discrete power devices for automotive, industrial, and consumer markets.

This device belongs to ST's PowerMESH™ high-voltage MOSFET product line, engineered specifically for rugged, high-efficiency hard-switched power conversion in industrial motor drives, welding equipment, and telecom/industrial SMPS.

FAQ

Is STW13NB60 pin-compatible with STW13NK60Z?

No. STW13NB60 uses TO-247 package with drain-connected tab (Pin 2), while STW13NK60Z is in TO-220 package with isolated tab. Pin numbering differs: STW13NB60 is G-D-S (1-2-3); STW13NK60Z is G-D-S but with different mechanical layout and thermal path. Direct replacement requires PCB redesign and thermal revalidation.

What is the maximum recommended gate resistor for 100 kHz switching?

For 100 kHz hard switching with 13 A load, a 4.7 Ω gate resistor is validated per datasheet test conditions (t_d(on) = 27 ns, t_r = 13 ns). Using ≥10 Ω increases switching time and losses; ≤2.2 Ω risks overshoot and gate driver overstress. Optimal value depends on driver capability and layout parasitics - verify with oscilloscope measurement of V_GS and V_DS waveforms.

Does STW13NB60 require a negative gate voltage for reliable turn-off?

No. The device has a gate threshold voltage of 3–5 V and is fully enhanced at V_GS = 10 V. Turn-off is reliably achieved with 0 V gate drive; applying –5 V is unnecessary and may increase gate driver complexity without benefit. However, a small negative bias (–2 V) can improve noise immunity in high-dv/dt environments.

Can STW13NB60 be used in synchronous rectification?

No. Its body diode (V_SD = 1.6 V, t_rr = 630 ns) is not optimized for synchronous rectification - forward voltage and recovery charge are too high versus dedicated SR MOSFETs. Use only as a controlled switch; for secondary-side rectification, select low-V_F, low-Q_rr devices like STP16NF06L or SiC Schottky alternatives.

STW13NB60 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: PowerMESH™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 540mOhm @ 6.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 82 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2600 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 190W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW13NB60 FAQ

1.How can I place an order for STW13NB60 through Aetrix?

Please submit a Request for Quotation (RFQ) for STW13NB60 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW13NB60 reliable?

The price and inventory of STW13NB60 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW13NB60 is usually 5 days.

3.What payment methods are accepted for STW13NB60?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW13NB60 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW13NB60?

STW13NB60 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW13NB60 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW13NB60?

For technical support, including STW13NB60 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW13NB60 requirements.

6.How does Aetrix verify that STW13NB60 is sourced from the original manufacturer or authorized distributors?

All STW13NB60 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW13NB60 meets industry standards.

7.What is the process for return or replacement of STW13NB60?

All STW13NB60 units undergo pre-shipment inspection (PSI). If there is an issue with STW13NB60, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW13NB60 part is unused and in its original packaging.

Return procedure for STW13NB60:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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