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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW13NK80Z

Name: STW13NK80Z
Brand: STMicroelectronics
SKU: STW13NK80Z
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW13NK80Z

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW13NK80Z.pdf

Description:: MOSFET N-CH 800V 12A TO247-3

Quantity:: RFQ Add To RFQ list

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Inventory:3,703

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Product details

Overview

STW13NK80Z from STMicroelectronics is an N-channel 800 V, 0.53 Ω (typ), 12 A SuperMESH™ Power MOSFET in TO-247 package with integrated gate-source Zener protection. It delivers high dv/dt immunity, 100% avalanche tested ruggedness, and low gate charge (115 nC) for hard-switched high-voltage SMPS and industrial motor drives.

For engineers reviewing the STW13NK80Z datasheet, STW13NK80Z pinout, STW13NK80Z application, or STW13NK80Z equivalent, key selection criteria include its 800 V V_DSS, 0.53 Ω R_DS(on) at 10 V_GS, 230 W P_tot, 4.5 mJ single-pulse avalanche energy, and Zener-protected gate structure - all critical for reliable high-voltage switching in offline converters and UPS systems.

Technical Context

This device employs ST's optimized strip-based SuperMESH™ layout to simultaneously reduce R_DS(on) and enhance dv/dt capability beyond standard high-voltage MOSFETs. Its intrinsic capacitances are minimized (C_iss = 3480 pF, C_oss = 312 pF), supporting efficient high-frequency operation up to several hundred kHz.

The integrated back-to-back gate-source Zener diodes (BVGSO = 30 V) provide robust ESD and transient overvoltage protection without external components. Avalanche performance is validated per JEDEC JESD24-1: EAS = 4.5 mJ (single pulse) and IAR = 12 A (repetitive), enabling unclamped inductive switching resilience.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	800 V - Withstands full mains-derived DC bus voltages (e.g., 560 V_DC from 400 V_AC) with margin for transients and ringing.
R_DS(on)	0.53 Ω (typ) at V_GS = 10 V - Enables low conduction loss in 12 A continuous applications at T_C = 25°C.
I_D (cont)	12 A at T_C = 25°C - Supports high-current output stages in industrial SMPS and welding inverters.
EAS	4.5 mJ - Confirmed single-pulse avalanche energy ensures safe operation during unclamped inductive turn-off events.
Q_g	115 nC - Low total gate charge reduces driver power demand and enables faster switching with moderate gate resistance.
R_thj-case	0.54 °C/W - Enables thermal management with heatsink interface; supports 230 W dissipation at T_C = 25°C.
V_GS(th)	3.0–4.5 V - Compatible with standard 5 V and 10 V gate drivers; threshold stability confirmed across temperature.

Pinout & Package

STW13NK80Z uses the industry-standard TO-247 package with three terminals: Drain (tab), Source (pin 1), and Gate (pin 2). The metal tab is electrically connected to the Drain, requiring isolation when mounted to heatsinks.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-voltage current path	Electrically tied to metal tab; must be isolated from heatsink unless circuit topology permits common-drain configuration.
Source (Pin 1)	Reference node for gate drive and current sensing	Low-inductance connection point for gate driver return and shunt resistor placement; defines local ground reference.
Gate (Pin 2)	Control terminal for channel conduction	Protected by integrated ±30 V Zener diodes; requires <30 V drive voltage to avoid clamping losses.

Key Features

Feature	Design Value
Zener-protected gate	Integrated back-to-back 30 V gate-source Zeners eliminate need for external TVS, reducing BOM count and PCB area.
100% avalanche tested	Each unit validated for single-pulse avalanche energy (EAS = 4.5 mJ) and repetitive avalanche current (IAR = 12 A).
Extremely high dv/dt capability	Robust layout minimizes parasitic coupling, enabling stable operation under >50 V/ns voltage transients in flyback and resonant topologies.
Low intrinsic capacitances	C_iss = 3480 pF, C_oss = 312 pF, C_rss = 67 pF - Reduces switching loss and improves efficiency in high-frequency converters.
SuperMESH™ optimized layout	Strip-based cell design achieves 0.53 Ω R_DS(on) at 800 V while maintaining manufacturing repeatability and SOA integrity.

Applications

Industrial SMPS

UPS Inverters

Use Scenario: High-efficiency 1–3 kW offline switch-mode power supplies for factory automation controllers and PLC power modules.

IC Role / Device Role: Primary-side switching element in hard-switched forward or half-bridge topologies operating from 375–400 V_DC bus.

Use Value: 800 V rating and 4.5 mJ EAS ensure reliable operation during line surges and transformer leakage inductance spikes.

Use Scenario: Bidirectional DC–AC inversion stage in online double-conversion UPS systems delivering clean sine-wave output.

IC Role / Device Role: High-side switch in full-bridge inverter leg handling 12 A RMS load current at 50/60 Hz fundamental with PWM modulation.

Use Value: Low R_DS(on) (0.53 Ω) minimizes conduction loss during extended battery backup operation; Zener protection guards against gate overvoltage during fault recovery.

Motor Drive Snubbers

Welding Inverters

Use Scenario: Active snubber switches in 3-phase IGBT-based VFDs protecting main devices from voltage overshoot during fast turn-off.

IC Role / Device Role: Clamp switch triggered synchronously with IGBT commutation to absorb inductive energy.

Use Value: High dv/dt immunity prevents false triggering; 12 A pulsed current rating (IDM = 48 A) handles short-duration snubbing peaks.

Use Scenario: Primary-side chopper in medium-duty arc welding inverters requiring high peak current and thermal robustness.

IC Role / Device Role: Main switching device in resonant or hard-switched DC-link chopper stage operating at 20–50 kHz.

Use Value: 230 W power dissipation and 0.54 °C/W R_thj-case support sustained 12 A operation with forced-air cooling; avalanche rating tolerates arc re-ignition transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW20NK80Z	Higher ID (20 A), higher R_DS(on) (0.38 Ω typ), larger Q_g (195 nC), same 800 V rating and TO-247 package.	Better suited for higher-current, lower-frequency applications where gate drive strength allows increased Q_g.	Select when system requires >12 A continuous current and can accommodate higher gate drive power.
FQP13N80	Same V_DSS (800 V), higher R_DS(on) (0.75 Ω max), lower ID (13 A), no built-in Zener protection, TO-247 package.	Lacks integrated gate protection; requires external gate clamp and has reduced avalanche ruggedness (no EAS spec).	Choose only if cost sensitivity outweighs reliability requirements and external protection is acceptable.

Compared with STW20NK80Z and FQP13N80, STW13NK80Z offers optimal balance of 12 A current handling, 0.53 Ω on-resistance, 115 nC gate charge, and integrated Zener protection - making it ideal for space-constrained, reliability-critical 1–2 kW industrial converters where gate drive simplicity and transient immunity are prioritized.

Availability

STW13NK80Z is available at Aetrix Electronics and suitable for industrial SMPS, UPS inverters, motor drive snubbers, and welding inverters requiring stable component supply and long-term manufacturability assurance.

Supply support for STW13NK80Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The SuperMESH™ MOSFET product line targets high-voltage, high-reliability power conversion applications - specifically engineered to deliver low R_DS(on), high dv/dt immunity, and robust avalanche performance in offline SMPS, UPS, and industrial motor control.

FAQ

Is STW13NK80Z still in active production?

STW13NK80Z is marked as "Obsolete Product(s)" in the official ST datasheet revision history (Rev 4, Oct 2006). However, Aetrix Electronics maintains legacy inventory with full traceability and provides lifecycle coordination support, including cross-reference guidance and last-time-buy planning for ongoing production programs.

What is the maximum safe operating temperature for STW13NK80Z?

The maximum operating junction temperature (T_J) is 150°C, with storage temperature ranging from –55°C to +150°C. Thermal derating begins at T_C = 25°C with a factor of 1.85 W/°C; at T_C = 100°C, the continuous drain current drops to 7.6 A to maintain safe junction temperature.

Can STW13NK80Z be used without external gate protection?

Yes - the device integrates back-to-back gate-source Zener diodes rated at 30 V (BVGSO), providing inherent protection against ESD and gate overvoltage transients. External gate clamping is not required unless system-level transients exceed ±30 V or repetitive stress conditions demand additional margin.

How does STW13NK80Z perform in zero-voltage switching (ZVS) circuits?

Its low C_oss (312 pF) and C_rss (67 pF), combined with 150 pF C_{oss_eq} (0–720 V), enable predictable resonant tank behavior in ZVS designs. The device's soft reverse recovery (trr = 632 ns at 25°C) and low Q_rr (7.2 µC) reduce switching loss and ringing during turn-on, supporting reliable ZVS operation up to ~300 kHz.

STW13NK80Z Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 650mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 155 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 3480 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 230W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW13NK80Z FAQ

1.How can I place an order for STW13NK80Z through Aetrix?

Please submit a Request for Quotation (RFQ) for STW13NK80Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW13NK80Z reliable?

The price and inventory of STW13NK80Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW13NK80Z is usually 5 days.

3.What payment methods are accepted for STW13NK80Z?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW13NK80Z transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW13NK80Z?

STW13NK80Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW13NK80Z order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW13NK80Z?

For technical support, including STW13NK80Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW13NK80Z requirements.

6.How does Aetrix verify that STW13NK80Z is sourced from the original manufacturer or authorized distributors?

All STW13NK80Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW13NK80Z meets industry standards.

7.What is the process for return or replacement of STW13NK80Z?

All STW13NK80Z units undergo pre-shipment inspection (PSI). If there is an issue with STW13NK80Z, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW13NK80Z part is unused and in its original packaging.

Return procedure for STW13NK80Z:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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