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STMicroelectronics STW13NM50N
- Part No.:
- STW13NM50N
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-247-3
- Datasheet:
-
STW13NM50N.pdf
- Description:
- MOSFET N-CH 500V 12A TO247-3
- Quantity:
- Payment:
- Shipping:
Inventory:2,316
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Product details
Overview
STW13NM50N from STMicroelectronics is an N-channel 500 V, 12 A MDmesh™ II Power MOSFET in TO-247 package with RDS(on) = 0.32 Ω (max) at VGS = 10 V, 100% avalanche tested, and low gate charge (Qg = 30 nC). It serves as a high-voltage switching element in offline SMPS, PFC stages, and industrial motor drives requiring robust unclamped inductive switching capability.
For engineers reviewing the STW13NM50N datasheet, STW13NM50N pinout, STW13NM50N application, or STW13NM50N equivalent, this device is evaluated for high-efficiency 500 V hard-switching topologies where low conduction loss, fast switching (td(off) = 40 ns), and reliable avalanche energy handling (EAS = 200 mJ) are critical selection criteria.
Technical Context
This MOSFET uses ST's second-generation MDmesh™ vertical structure combined with strip layout to minimize both RDS(on) and gate charge-enabling high power density in continuous conduction mode (CCM) PFC and resonant LLC converters. Its 150 °C max junction temperature and 1.25 °C/W thermal resistance (j-case) support high-power operation with standard heatsinking.
The device features a fast, soft-recovery body diode (trr = 300 ns, Qrr = 3 µC at Tj = 25 °C) and high dv/dt immunity (15 V/ns rated, 30 V/ns typical), making it suitable for snubberless designs in flyback and forward converters operating up to 100 kHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 500 V - Withstands full mains rectified voltage (e.g., 375 V DC bus + margin) in universal-input offline converters |
| RDS(on) max | 0.32 Ω - Enables ≤ 46 W conduction loss at 12 A continuous drain current (TC = 25 °C) |
| Qg | 30 nC - Reduces gate drive power and enables use with low-current drivers (e.g., <100 mA peak) |
| EAS | 200 mJ - Supports single-pulse unclamped inductive switching without external clamping in PFC boost stages |
| tr/tf | 15 ns / 10 ns - Minimizes switching transition losses in hard-switched topologies up to 100 kHz |
| dv/dt rating | 15 V/ns - Ensures noise-immune operation during fast voltage transients in high-side switch configurations |
| Tj max | 150 °C - Allows sustained operation under high ambient conditions with standard TO-247 heatsink mounting |
Pinout & Package
STW13NM50N is housed in a TO-247 package - a through-hole, 3-lead power package with isolated metal tab for direct heatsink mounting and optimized thermal path (Rth(j–case) = 1.25 °C/W). The package complies with ECOPACK® environmental standards and supports lead-free soldering.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Drain) | Main high-voltage current path | Connected to heat slug; electrically tied to case - requires isolation from heatsink unless referenced to same potential |
| 2 (Gate) | Control terminal | High-impedance MOS input; requires low-inductance gate loop and ≥ ±25 V rating for safe overvoltage margin |
| 3 (Source) | Reference node for gate drive and current sensing | Low-side return path; must be routed with minimal inductance to avoid ringing during switching transitions |
Key Features
| Feature | Design Value |
|---|---|
| MDmesh™ II vertical structure | Delivers industry-leading RDS(on) × Qg figure-of-merit for 500 V class, reducing total switching + conduction loss |
| 100% avalanche tested | Guarantees single-pulse ruggedness up to 200 mJ without derating - eliminates need for external snubbers in boost PFC |
| Low Ciss/Coss | 960 pF / 50 pF enables stable gate drive with moderate Zin and predictable Miller effect behavior |
| Soft-recovery body diode | trr = 300 ns, Qrr = 3 µC - Limits voltage overshoot and EMI during freewheeling in discontinuous conduction mode |
| ECOPACK® compliance | Lead-free second-level interconnect and RoHS-compliant packaging - meets global environmental manufacturing requirements |
Applications
| Industrial AC-DC Power Supplies | Server & Telecom Rectifiers |
|---|---|
|
Use Scenario: 1 kW active clamp forward or half-bridge converter with universal AC input (85–265 VAC). IC Role / Device Role / Timing Role: Primary-side high-voltage switch handling 500 V DC link and 12 A peak current at 100 kHz switching frequency. Use Value: Low RDS(on) and Qg reduce total losses by ~12% vs. legacy 500 V MOSFETs, enabling >92% efficiency at full load. |
Use Scenario: High-density 3 kW telecom rectifier module with dual-phase interleaved PFC front-end. IC Role / Device Role / Timing Role: Boost switch in each PFC phase, operating in continuous conduction mode with 16 kHz switching. Use Value: Avalanche ruggedness allows elimination of TVS clamps on boost diodes, reducing BOM count and board area by 8%. |
| Motor Drive Inverters | Induction Heating Systems |
|
Use Scenario: 3-phase 7.5 kW HVAC inverter using 6-pack TO-247 modules with discrete gate drivers. IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in 10–20 kHz hard-switched inverter leg, driving 30 A RMS motor current. Use Value: Fast tf (10 ns) and low Qgd (15 nC) suppress shoot-through risk and reduce dead-time requirements by 25 ns. |
Use Scenario: 5 kW resonant tank driver in domestic induction cooktop with variable-frequency operation (20–100 kHz). IC Role / Device Role / Timing Role: Half-bridge high-side switch managing 500 V DC bus and 25 A pulsed drain current. Use Value: Soft diode recovery minimizes voltage spikes across resonant capacitor, extending capacitor lifetime by >3× vs. standard MOSFETs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW20NM50FD | 500 V, 20 A, RDS(on) = 0.22 Ω, Qg = 45 nC, Fast Diode (trr = 120 ns) | Higher current rating and faster diode but larger gate charge increases drive complexity | Select when higher ID and lower trr are prioritized over gate drive simplicity and thermal footprint |
| IPP60R099C6 | 600 V, 35 A, RDS(on) = 0.099 Ω, Qg = 52 nC, CoolMOS™ C6 technology | Higher voltage rating and lower RDS(on), but not 100% avalanche tested and higher cost | Select when 600 V margin is required and system-level avalanche testing can be performed externally |
Compared with STW20NM50FD and IPP60R099C6, STW13NM50N offers the optimal balance of ruggedness, gate drive simplicity, and thermal performance for cost-sensitive 500 V industrial SMPS - especially where standardized 12 A current handling and proven avalanche reliability are design anchors.
Availability
STW13NM50N is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, server rectifiers, and motor drive inverters requiring stable component supply and long-term production continuity.
Supply support for STW13NM50N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs and discrete power devices for industrial, automotive, and consumer markets.
The STW13NM50N belongs to ST's MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-reliability offline switching applications where low RDS(on), low Qg, and guaranteed avalanche capability are mandatory.
FAQ
What is the maximum continuous drain current for STW13NM50N at 100 °C case temperature?
The maximum continuous drain current (ID) is 6 A at TC = 100 °C, as specified in Table 2 of the datasheet. This reflects thermal derating due to reduced channel conductivity and increased RDS(on) at elevated temperatures - design must ensure heatsink sizing maintains TC ≤ 100 °C for sustained 6 A operation.
Does STW13NM50N have a fully rated avalanche capability, and what is the test condition?
Yes - STW13NM50N is 100% avalanche tested per datasheet Table 4. Single-pulse avalanche energy (EAS) is 200 mJ at Tj = 25 °C, with IAS = 3.5 A and VDD = 50 V. Testing follows unclamped inductive load (UIL) methodology per JEDEC JESD24-11, confirming ruggedness without external protection.
Can STW13NM50N be used in a synchronous rectifier configuration?
No - STW13NM50N is an N-channel enhancement-mode MOSFET optimized for high-side or low-side switching, not synchronous rectification. Its body diode has relatively high VSD (1.3 V) and slow trr (300 ns), making it unsuitable for high-frequency SR applications where low forward drop and ultrafast recovery are required.
What is the gate threshold voltage range, and how does it affect drive circuit design?
VGS(th) is specified from 2 V (min) to 4 V (max) at ID = 250 µA. This wide range means gate drive must provide ≥ 10 V to ensure full enhancement and low RDS(on); 5 V logic-level drives are insufficient. Designers must use dedicated gate drivers with rail-to-rail output and sufficient current (>1 A peak) to charge Qg = 30 nC within nanoseconds.
STW13NM50N Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™ II
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 320mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 30 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 960 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 100W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247-3
STW13NM50N FAQ
1.How can I place an order for STW13NM50N through Aetrix?
Please submit a Request for Quotation (RFQ) for STW13NM50N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STW13NM50N reliable?
The price and inventory of STW13NM50N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW13NM50N is usually 5 days.
3.What payment methods are accepted for STW13NM50N?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW13NM50N transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STW13NM50N?
STW13NM50N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STW13NM50N order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STW13NM50N?
For technical support, including STW13NM50N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW13NM50N requirements.
6.How does Aetrix verify that STW13NM50N is sourced from the original manufacturer or authorized distributors?
All STW13NM50N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW13NM50N meets industry standards.
7.What is the process for return or replacement of STW13NM50N?
All STW13NM50N units undergo pre-shipment inspection (PSI). If there is an issue with STW13NM50N, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STW13NM50N part is unused and in its original packaging.
Return procedure for STW13NM50N:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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