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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW14NM50FD

Name: STW14NM50FD
Brand: STMicroelectronics
SKU: STW14NM50FD
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW14NM50FD

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW14NM50FD.pdf

Description:: MOSFET N-CH 500V 14A TO247-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STW14NM50FD from STMicroelectronics is an N-channel 500V FDmesh™ Power MOSFET with fast intrinsic body diode, designed for high-efficiency switching in bridge topologies including ZVS phase-shift converters. It delivers 12A continuous drain current at T_C = 25°C, 0.32Ω R_DS(on) at V_GS = 10V, 160W power dissipation, and 20V/ns dv/dt capability in TO-247 package.

For engineers reviewing the STW14NM50FD datasheet, STW14NM50FD pinout, STW14NM50FD application, or STW14NM50FD equivalent, key selection criteria include avalanche ruggedness (6A I_AR, 400mJ E_AS), fast diode recovery (140ns t_rr @ 25°C), low gate charge (12nC Q_g), and thermal resistance (0.77°C/W R_thj-case).

Technical Context

This MOSFET integrates a fast-recovery body diode optimized for zero-voltage-switching (ZVS) operation, enabling reduced switching losses in resonant and soft-switching topologies. Its FDmesh™ structure achieves low R_DS(on) while maintaining high dv/dt immunity and robust unclamped inductive switching performance.

The device supports high-speed switching with 19ns turn-on delay, 10ns rise time, and 39ns off-voltage rise time under standard test conditions (V_DD = 250–400V, I_D = 6–12A, R_G = 4.7Ω). Gate input resistance is 2Ω, minimizing drive circuit sensitivity to noise and layout parasitics.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	500V - Withstands up to 500V drain-source blocking voltage, suitable for 400V DC bus applications with margin.
R_DS(on)	0.32Ω max @ V_GS = 10V - Enables low conduction loss at 12A, reducing heat generation in high-current switch nodes.
I_D (cont)	12A @ T_C = 25°C - Supports sustained 12A load current with proper heatsinking and thermal management.
E_AS	400mJ - Single-pulse avalanche energy rating ensures reliability during transient overvoltage events without external snubbers.
t_rr	140ns @ T_j = 25°C - Fast body diode recovery minimizes reverse recovery loss and EMI in hard- and soft-switched converters.
Q_g	12nC - Low total gate charge reduces driver power requirement and enables efficient high-frequency (>100kHz) operation.
R_thj-case	0.77°C/W - Enables effective junction-to-heatsink thermal transfer in TO-247 package, critical for high-power density designs.

Pinout & Package

STW14NM50FD uses a TO-247 package with three leads: Drain (tab), Source (pin 1), and Gate (pin 2). The metal tab is electrically connected to the Drain terminal and must be isolated from heatsink unless referenced to system ground potential.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Source terminal of N-channel MOSFET	Reference node for gate drive; carries full load current return path; tied to power ground in most half-bridge configurations.
2 (Gate)	Control electrode	High-impedance input requiring <12nC charge for full enhancement; sensitive to ESD and ringing-requires low-inductance gate loop.
3 (Drain / Tab)	Power output terminal	Connected internally to metal tab; carries switched high-voltage/high-current path; requires insulated mounting when not at ground potential.

Key Features

Feature	Design Value
FDmesh™ trench-gate structure	Combines low R_DS(on) and fast switching with enhanced avalanche ruggedness-enables compact, high-efficiency SMPS designs.
100% avalanche tested	Each unit validated for repetitive and non-repetitive avalanche stress, eliminating need for derating in inductive switching applications.
Intrinsic fast-recovery body diode	t_rr = 140ns @ 25°C and 1890nC Q_rr @ 150°C-reduces cross-conduction loss and improves ZVS behavior in phase-shifted full-bridge converters.
Low gate input resistance (2Ω)	Minimizes gate oscillation risk and simplifies gate driver design-no external gate resistor needed for stability in many layouts.
ECOPACK® RoHS-compliant packaging	Lead-free second-level interconnect with JEDEC JESD97 marking-meets global environmental compliance requirements without performance trade-offs.

Applications

Industrial Switch-Mode Power Supplies

ZVS Phase-Shift Full-Bridge Converters

Use Scenario: High-efficiency 1–3kW AC/DC front-end or isolated DC/DC converter operating from 380–400V DC bus.

IC Role / Device Role / Timing Role: Primary-side high-side or low-side switching element in full-bridge topology, handling 12A peak current at 100–200kHz.

Use Value: Low R_DS(on) and fast diode reduce conduction and recovery losses, improving efficiency by ≥1.2% versus standard 500V MOSFETs.

Use Scenario: Telecom rectifier or server PSU using soft-switching to minimize EMI and thermal stress.

IC Role / Device Role / Timing Role: Active switch in phase-shifted bridge where body diode conducts during dead-time and recovers before next switching event.

Use Value: 140ns t_rr and low Q_rr enable reliable ZVS across full load range, reducing switching loss by up to 35% vs. standard diodes.

Uninterruptible Power Supplies (UPS)

Motor Drive Inverters (HVAC, Industrial)

Use Scenario: Online double-conversion UPS with bidirectional power flow and battery backup interface.

IC Role / Device Role / Timing Role: Output stage switch managing 500V DC link inversion to 230V AC, subject to frequent short-circuit and overload transients.

Use Value: 400mJ E_AS and 6A I_AR provide inherent fault tolerance during line surges or output shorts-reducing need for external protection.

Use Scenario: 3–7.5kW variable-frequency drive for HVAC compressors or industrial pumps.

IC Role / Device Role / Timing Role: Inverter leg switch handling 12A motor phase current with PWM frequencies up to 16kHz.

Use Value: Tight R_DS(on) distribution (<0.4Ω max) ensures balanced thermal loading across parallel devices in multi-phase systems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12NM50FD	Same die, TO-220 package; R_thj-case = 0.78°C/W vs. 0.77°C/W; P_TOT = 160W but lower heatsink interface reliability.	Limited to lower-power or space-constrained designs where TO-247 mechanical robustness and thermal margin are not required.	Select when cost-sensitive, lower-volume, or legacy board layout mandates TO-220 footprint.
IPP60R099C7	650V CoolMOS™; R_DS(on) = 0.099Ω; higher V_GS(th) (3–5V); no integrated fast diode-requires external SiC/Schottky.	Better for >500V bus or ultra-high-efficiency PFC stages; unsuitable for ZVS bridge without added diode.	Choose only if upgrading to 650V systems or optimizing for lowest R_DS(on) at expense of diode integration and avalanche margin.

Compared with STP12NM50FD, STW14NM50FD offers superior mechanical mounting stability and marginally better thermal resistance; versus IPP60R099C7, it trades higher R_DS(on) for integrated fast diode, proven avalanche ruggedness, and direct drop-in compatibility in existing 500V FDmesh™ designs.

Availability

STW14NM50FD is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, ZVS phase-shift converters, uninterruptible power supplies (UPS), and motor drive inverters requiring stable component supply and long-term manufacturing continuity.

Supply support for STW14NM50FD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, delivering innovative silicon solutions for automotive, industrial, power, and digital consumer markets since 1987.

The FDmesh™ Power MOSFET product line targets high-efficiency, high-reliability power conversion systems-including telecom rectifiers, server PSUs, and industrial motor drives-where low conduction loss, fast switching, and ruggedness are essential.

FAQ

Is STW14NM50FD pin-compatible with STP12NM50FD?

No-STW14NM50FD uses TO-247 (3-lead, isolated tab), while STP12NM50FD uses TO-220 (3-lead, non-isolated tab). Pin numbering differs: TO-247 assigns Source–Gate–Drain (1–2–3), TO-220 uses Source–Gate–Drain (1–2–3) but with different lead pitch and tab isolation requirements. PCB layout and heatsink mounting are not interchangeable.

What is the maximum recommended gate drive voltage for STW14NM50FD?

The absolute maximum V_GS is ±30V, but ST recommends operating within 10V to 15V for optimal R_DS(on), switching speed, and gate oxide reliability. Driving above 15V yields diminishing R_DS(on) improvement while increasing gate leakage and risk of overvoltage stress during transients.

Does STW14NM50FD require a gate resistor in series with the driver?

A gate resistor is strongly recommended-typically 4.7Ω to 22Ω-to dampen ringing caused by gate-drain capacitance (C_rss = 20pF) and PCB inductance. The datasheet specifies switching times with R_G = 4.7Ω; omitting it risks shoot-through, EMI, and gate overshoot exceeding ±30V.

Can STW14NM50FD be used in synchronous rectification applications?

No-it is not optimized for synchronous rectification. Its body diode, while fast, has V_SD = 1.5V at 12A, resulting in higher conduction loss than dedicated SR controllers with external low-V_F MOSFETs. Use only as a primary-side switch; for secondary-side rectification, select dedicated SR drivers like STSR3

STW14NM50FD Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: FDmesh™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 400mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1000 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 160W (Tc)

Operating Temperature:: -65°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW14NM50FD FAQ

1.How can I place an order for STW14NM50FD through Aetrix?

Please submit a Request for Quotation (RFQ) for STW14NM50FD on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW14NM50FD reliable?

The price and inventory of STW14NM50FD are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW14NM50FD is usually 5 days.

3.What payment methods are accepted for STW14NM50FD?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW14NM50FD transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW14NM50FD?

STW14NM50FD orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW14NM50FD order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW14NM50FD?

For technical support, including STW14NM50FD datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW14NM50FD requirements.

6.How does Aetrix verify that STW14NM50FD is sourced from the original manufacturer or authorized distributors?

All STW14NM50FD products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW14NM50FD meets industry standards.

7.What is the process for return or replacement of STW14NM50FD?

All STW14NM50FD units undergo pre-shipment inspection (PSI). If there is an issue with STW14NM50FD, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW14NM50FD part is unused and in its original packaging.

Return procedure for STW14NM50FD:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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