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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW14NM65N

Name: STW14NM65N
Brand: STMicroelectronics
SKU: STW14NM65N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW14NM65N

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW14NM65N.pdf

Description:: MOSFET N-CH 650V 12A TO247-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STW14NM65N from STMicroelectronics is an N-channel 650 V, 12 A, 0.33 Ω (typ.) MDmesh™ II Power MOSFET in TO-247 package, designed for high-efficiency switching converters. It features 100% avalanche tested ruggedness, low gate charge (45 nC), and low input capacitance (1300 pF), enabling fast switching in PFC and SMPS stages operating at 50–300 kHz.

For engineers reviewing the STW14NM65N datasheet, STW14NM65N pinout, STW14NM65N application, or STW14NM65N equivalent, key selection criteria include R_DS(on) at 10 V gate drive, unclamped inductive switching capability (E_AS = 300 mJ), dv/dt immunity (30 V/ns), and thermal resistance (R_thj-case = 1 °C/W) for high-power density designs.

Technical Context

This device implements ST's second-generation MDmesh™ vertical superjunction architecture with strip layout, achieving ultra-low conduction loss while maintaining high voltage blocking. Its optimized charge distribution reduces C_iss, C_oss, and Q_gd, supporting ZVS and soft-switching topologies.

The integrated source-drain diode exhibits fast reverse recovery (t_rr = 390 ns @ 25 °C, 530 ns @ 150 °C) and low Q_rr (5–7 µC), minimizing commutation losses in bridge-leg configurations. Gate threshold voltage (2–4 V) ensures robust noise immunity and compatibility with standard 10 V gate drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - Sustains full mains rectified voltage in universal-input offline SMPS (e.g., 375 V DC bus + 100 V margin).
R_DS(on) max	0.38 Ω @ V_GS = 10 V, I_D = 6 A - Enables ≤ 54 W conduction loss at 12 A continuous drain current in TO-247 heatsinked layout.
Q_g	45 nC - Reduces gate driver power demand and switching transition time in 100–200 kHz hard-switched PFC stages.
E_AS	300 mJ - Supports reliable unclamped inductive switching under worst-case fault conditions without external snubbers.
t_r/t_f	13 ns / 20 ns @ R_G = 4.7 Ω - Enables < 50 ns total switching transition, critical for minimizing overlap loss in synchronous rectifiers.
C_iss	1300 pF @ V_DS = 50 V - Low input capacitance minimizes Miller effect and improves gate drive stability in high-dV/dt environments.
R_thj-case	1 °C/W - Allows 125 W dissipation at ΔT = 125 °C junction-to-case, supporting compact thermal design in industrial power supplies.

Pinout & Package

STW14NM65N uses a TO-247 package with three leads: Drain (pin 1), Gate (pin 2), Source (pin 3). The metal tab is electrically connected to the Drain terminal and serves as the primary heat transfer path to the heatsink.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Tab)	Drain (D)	High-voltage power node; electrically tied to heatsink-requires isolation washer or insulating pad when mounted to grounded chassis.
Pin 2	Gate (G)	Control input; requires low-impedance gate driver (< 10 Ω series resistance) to manage 45 nC charge and suppress oscillation.
Pin 3	Source (S)	Power return path and reference for gate drive; must be routed with minimal inductance to avoid shoot-through in half-bridge layouts.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse E_AS = 300 mJ and repetitive avalanche capability up to I_AS = 3 A without derating.
Low Q_gd/Q_g ratio	25 nC / 45 nC = 0.56 - Reduces Miller-induced turn-on risk during high dv/dt transitions in bridge circuits.
Optimized C_oss eq	150 pF over 0–520 V - Enables predictable soft-switching timing and reduced capacitive turn-off loss in LLC resonant converters.
Fast body diode t_rr	390 ns @ T_J = 25 °C - Lowers dead-time requirement and circulating current in synchronous buck and phase-shifted full-bridge topologies.
ECOPACK® lead-free	Complies with RoHS and JEDEC JESD97; second-level interconnect marked on package for traceability and process control.

Applications

Industrial SMPS

Server PSU

Use Scenario: Primary-side switch in 1–3 kW telecom rectifiers with active clamp forward or LLC resonant topology.

IC Role / Device Role / Timing Role: High-voltage, high-current switching element handling 650 V DC bus and 12 A peak load current.

Use Value: 0.33 Ω R_DS(on) and 1 °C/W thermal resistance enable >95% efficiency at full load with passive cooling augmentation.

Use Scenario: PFC boost switch in 80 PLUS Titanium-certified server power supplies operating at 70–100 kHz.

IC Role / Device Role / Timing Role: Fast-switching, low-Q_g MOSFET driving discontinuous/continuous conduction mode boost stages.

Use Value: 45 nC Q_g and 1300 pF C_iss reduce gate drive loss by 35% vs. legacy planar MOSFETs, improving light-load efficiency.

Solar Inverter

EV Charger

Use Scenario: DC-DC isolation stage in string inverters converting 600–1000 V PV input to 400 V battery bus.

IC Role / Device Role / Timing Role: Primary-side switch in dual-active-bridge (DAB) or phase-shifted full-bridge isolated DC-DC converter.

Use Value: 390 ns body diode t_rr and low Q_rr minimize reactive current circulation, reducing transformer RMS current and core loss.

Use Scenario: Output-stage switch in 11 kW AC-DC on-board chargers using interleaved totem-pole PFC + LLC DC-DC.

IC Role / Device Role / Timing Role: High-reliability 650 V switch rated for continuous 12 A operation at 100 °C case temperature.

Use Value: 7.6 A continuous rating at T_C = 100 °C supports sustained high-power charging without forced air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP65R041CFD7	R_DS(on) = 0.041 Ω (lower), but V_DSS = 650 V same; higher Q_g = 62 nC; CoolMOS™ CFD7 body diode t_rr = 220 ns.	Better conduction efficiency below 8 A; superior for ZVS LLC where low R_DS(on) dominates; less suited for hard-switched PFC due to higher Q_g.	Select IPP65R041CFD7 when system prioritizes conduction loss reduction over gate drive simplicity and dv/dt robustness.
IXFH30N65X2	R_DS(on) = 0.135 Ω (higher); Q_g = 42 nC (similar); t_rr = 280 ns; HiPerFET™ X2 technology offers higher SOA margin at elevated T_J.	Stronger safe operating area at 150 °C; preferred in motor drive inverters with high di/dt transients; lower efficiency in high-frequency SMPS.	Select IXFH30N65X2 when application demands enhanced ruggedness under short-circuit or overload stress, not raw efficiency.

Compared with IPP65R041CFD7 and IXFH30N65X2, STW14NM65N delivers balanced performance: lower Q_g than IXFH30N65X2 and better dv/dt immunity than IPP65R041CFD7, making it optimal for cost-sensitive, thermally constrained 1–2 kW industrial SMPS where reliability and ease of drive matter most.

Availability

STW14NM65N is available at Aetrix Electronics and suitable for industrial SMPS, server power supplies, solar inverters, and EV on-board chargers requiring stable component supply and long-term manufacturing continuity.

Supply support for STW14NM65N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, microcontrollers, and automotive ICs with vertical manufacturing capabilities.

STW14NM65N belongs to the MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in offline power conversion systems demanding low R_DS(on), low gate charge, and rugged avalanche performance.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STW14NM65N supports 7.6 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the datasheet. This rating reflects thermal derating due to reduced heat transfer efficiency at elevated temperatures and must be validated with actual PCB layout and heatsink thermal resistance.

Does STW14NM65N require a negative gate turn-off voltage?

No. The device operates with 0 V to +10 V gate drive and has a gate threshold voltage range of 2–4 V. A negative turn-off voltage is not required; however, a low-impedance pull-down path (≤ 10 Ω) is recommended to prevent spurious turn-on from dv/dt coupling during high-speed switching.

Can STW14NM65N replace STP14NM65N in existing TO-220 designs?

No direct drop-in replacement: STW14NM65N uses TO-247 packaging with different pin spacing, mounting hole location, and thermal interface (drain-connected tab). Board redesign and mechanical rework are required to accommodate TO-247 footprint and heatsink interface.

What is the typical reverse recovery charge (Q_rr) of the integrated body diode?

The typical Q_rr is 5 µC at T_J = 25 °C and 7 µC at T_J = 150 °C, measured under ISD = 12 A, di/dt = 100 A/µs, and VDD = 100 V. This value directly impacts commutation loss in bridge configurations and must be included in total switching loss calculations.

STW14NM65N Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 380mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 45 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1300 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW14NM65N FAQ

1.How can I place an order for STW14NM65N through Aetrix?

Please submit a Request for Quotation (RFQ) for STW14NM65N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW14NM65N reliable?

The price and inventory of STW14NM65N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW14NM65N is usually 5 days.

3.What payment methods are accepted for STW14NM65N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW14NM65N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW14NM65N?

STW14NM65N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW14NM65N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW14NM65N?

For technical support, including STW14NM65N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW14NM65N requirements.

6.How does Aetrix verify that STW14NM65N is sourced from the original manufacturer or authorized distributors?

All STW14NM65N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW14NM65N meets industry standards.

7.What is the process for return or replacement of STW14NM65N?

All STW14NM65N units undergo pre-shipment inspection (PSI). If there is an issue with STW14NM65N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW14NM65N part is unused and in its original packaging.

Return procedure for STW14NM65N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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