STMicroelectronics STW150NF55

Overview

STW150NF55 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in TO-247 package, rated for 55 V V_DS, 0.005 Ω R_DS(on) at V_GS = 10 V, and 120 A continuous drain current at T_C = 25°C. It delivers high-current switching in motor drives, DC-DC converters, and industrial power supplies with rugged unclamped inductive switching capability.

For engineers reviewing the STW150NF55 datasheet, STW150NF55 pinout, STW150NF55 application, or STW150NF55 equivalent, key selection criteria include its 850 mJ single-pulse avalanche energy, 8 V/ns dv/dt immunity, 140 nC total gate charge, and thermal resistance of 0.5 °C/W junction-to-case - critical for high-reliability power stage design.

Technical Context

This STripFET™ II device uses ST's Single Feature Size™ strip-based process to achieve ultra-low on-resistance and high cell density. Its optimized gate charge profile (Q_gd/Q_g = 70/140 = 50%) supports fast, low-loss hard-switching in synchronous rectifiers and half-bridge topologies.

The integrated source-drain diode exhibits 130 ns reverse recovery time and 350 nC Q_rr under 120 A, 100 A/µs conditions at 150°C, enabling efficient freewheeling in high-frequency SMPS without external Schottky supplementation.

Key Specifications

Pinout & Package

STW150NF55 is housed in a TO-247 package with three terminals: Gate (G), Drain (D), and Source (S). The metal tab is electrically connected to the Drain, requiring isolation when mounted to grounded heatsinks.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRFP4668PBF and IXFH120N55X3, STW150NF55 uniquely balances low R_DS(on), verified avalanche ruggedness, and standard TO-247-3 compatibility - making it optimal for cost-sensitive, high-reliability industrial power stages where layout reuse and fault tolerance are mandatory.

Availability

STW150NF55 is available at Aetrix Electronics and suitable for motor drives, uninterruptible power supplies, and industrial DC-DC converters requiring stable component supply across multi-year production cycles.

Supply support for STW150NF55 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, power, MCU, and sensor solutions for automotive, industrial, and consumer markets.

STW150NF55 belongs to the STripFET™ II Power MOSFET product line, engineered specifically for high-efficiency, high-current switching in industrial motor control and power conversion systems demanding ruggedness and thermal stability.

FAQ

Is STW150NF55 suitable for synchronous rectification in 100 kHz LLC resonant converters?

Yes. With 130 ns reverse recovery time and 350 nC Q_rr measured at 120 A and 150°C, STW150NF55 minimizes body-diode conduction loss and associated EMI in high-frequency resonant topologies. Its low R_DS(on) ensures low forward voltage drop during synchronous on-time, improving overall efficiency above 96%.

What is the maximum safe operating area (SOA) for repetitive pulse operation at 100°C case temperature?

At T_C = 100°C, the continuous drain current is derated to 106 A, and the SOA curve (Figure 1) shows safe operation up to 40 V and 60 A for 10 ms pulses. For repetitive pulses, the average power must remain below 150 W (derated from 300 W at 25°C using 2 W/°C factor) to avoid thermal runaway.

Does STW150NF55 require negative gate drive for reliable turn-off in high-dv/dt environments?

No. STW150NF55 has a gate threshold voltage of 2–4 V and is designed for 0–10 V or 0–12 V gate drive. Its 8 V/ns dv/dt immunity and low C_rss/C_iss ratio (350/4400 pF) prevent spurious turn-on without negative bias; however, a 1–2 Ω gate resistor and local 100 nF decoupling are recommended for noise suppression.

Can STW150NF55 be paralleled with identical units for higher current capacity?

Yes. Its positive temperature coefficient of R_DS(on) (see Figure 10) ensures inherent current sharing. Parallel operation requires matched gate drive paths, symmetrical PCB layout, and individual 1–2 Ω gate resistors to damp oscillation. Derate total current by 15% to account for thermal coupling and parameter spread.