STMicroelectronics STW15N80K5

Overview

STW15N80K5 from STMicroelectronics is an N-channel 800 V, 300 mΩ typ. (375 mΩ max), 14 A high-voltage Power MOSFET in TO-247 package, built on MDmesh K5 vertical structure technology. It delivers ultra-low gate charge (32 nC), 100% avalanche tested operation, and Zener-protected gate for robustness in high-efficiency switch-mode power supplies, industrial motor drives, and UPS systems.

For engineers reviewing the STW15N80K5 datasheet, STW15N80K5 pinout, STW15N80K5 application, or STW15N80K5 equivalent, this page provides verified electrical ratings, thermal data, switching behavior, safe operating area limits, and real-world design implications - all derived from DS9181 Rev 4 (October 2025).

Technical Context

This device uses ST's MDmesh K5 proprietary vertical silicon architecture to achieve a figure of merit (R_DS(on) × Q_g) of ~11.3 Ω·nC, enabling high power density in hard-switched topologies. Its 800 V breakdown voltage (V_(BR)DSS) supports 400 V DC bus designs with >100 V margin, while 150 mJ single-pulse avalanche energy (E_AS) ensures ruggedness under unclamped inductive switching.

The integrated body diode exhibits 445 ns reverse recovery time (t_rr) and 8.2 µC reverse recovery charge (Q_rr) at 25 °C, with soft recovery characteristics critical for reducing EMI in PFC and resonant converters. Thermal resistance R_thJC is 0.66 °C/W, enabling high-power operation when mounted on heatsinks.

Key Specifications

Pinout & Package

STW15N80K5 is housed in a TO-247 package with isolated tab (drain-connected). The case is electrically connected to the drain terminal, requiring insulated mounting hardware in floating-ground applications.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPW65R041CFD7 and IXFH30N80X, STW15N80K5 uniquely balances 800 V capability, ultra-low Q_g, and integrated gate protection - making it optimal for cost-sensitive, thermally constrained 400 V industrial SMPS where reliability under transient stress is non-negotiable.

Availability

STW15N80K5 is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and EV charging infrastructure requiring stable component supply across multi-year production cycles.

Supply support for STW15N80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

STW15N80K5 belongs to the MDmesh K5 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-power-density switch-mode power conversion in industrial and renewable energy systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The maximum continuous drain current (I_D) for STW15N80K5 at T_C = 100 °C is 8.8 A, as specified in Table 1 of DS9181 Rev 4. This value is limited by junction temperature (T_J ≤ 150 °C) and reflects practical thermal derating in enclosed or forced-air-cooled environments - not a theoretical limit.

Does STW15N80K5 include integrated gate protection?

Yes - STW15N80K5 features an integrated Zener diode between gate and source, rated for ±30 V, providing inherent protection against electrostatic discharge and gate voltage transients. This eliminates the need for external gate clamping components in most industrial applications, as confirmed in the "Features" section of DS9181.

Can STW15N80K5 replace STP15N80K5 in existing TO-220 layouts?

No - STW15N80K5 uses TO-247 packaging with different lead spacing, tab orientation, and thermal mounting requirements versus the TO-220 package of STP15N80K5. Mechanical redesign, PCB footprint change, and revised heatsink interface are required; electrical compatibility does not imply drop-in replacement.

What is the typical reverse recovery charge (Q_rr) of the body diode?

The typical reverse recovery charge (Q_rr) of the intrinsic body diode is 8.2 µC at T_J = 25 °C, I_SD = 14 A, and di/dt = 100 A/µs, as measured per Figure 20 test circuit in DS9181 Rev 4. At 150 °C, Q_rr increases to 10 µC, impacting snubber sizing in high-temperature operation.