STMicroelectronics STW15N95K5
- Part No.:
- STW15N95K5
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-247-3
- Datasheet:
-
STW15N95K5.pdf
- Description:
- MOSFET N-CH 950V 12A TO247
- Quantity:
- Payment:

- Shipping:

Inventory:9,409
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Product details
Overview
STW15N95K5 from STMicroelectronics is a high-voltage N-channel Power MOSFET using MDmesh K5 technology, rated for 950 V VDS, 410 mΩ typ. RDS(on) at VGS = 10 V and 6 A, with 12 A continuous drain current (TC = 25 °C), ultra-low 30 nC total gate charge, and 100% avalanche tested - deployed in industrial AC-DC front-end switching and high-efficiency HV DC-DC converters.
For engineers reviewing the STW15N95K5 datasheet, STW15N95K5 pinout, STW15N95K5 application, or STW15N95K5 equivalent, key selection criteria include its 950 V breakdown voltage, 410 mΩ on-resistance at 10 V gate drive, 30 nC Qg, TO-247 package thermal resistance (RthJC = 0.74 °C/W), and Zener-protected gate structure for robust ESD immunity.
Technical Context
This device implements ST's proprietary MDmesh K5 vertical superjunction architecture to minimize conduction and switching losses simultaneously. Its 855 pF Ciss, 65 pF Coss, and 1 pF Crss enable fast, low-loss hard-switching up to 100 kHz in PFC and resonant topologies.
The integrated source-drain diode features 444 ns trr and 7 µC Qrr at 25 °C (rising to 630 ns / 9.2 µC at 150 °C), supporting moderate-frequency inductive switching with controlled recovery behavior. The 50 V/ns MOSFET dv/dt ruggedness rating ensures reliable operation under high-slew-rate conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 950 V - supports direct rectified 600 VAC input (≈850 VDC peak) with 100 V margin for surge and ringing. |
| RDS(on) typ. | 410 mΩ at VGS = 10 V, ID = 6 A - enables <1.5 W conduction loss at 6 A, critical for >95% efficiency designs. |
| Qg | 30 nC - reduces gate driver power demand and allows use of compact 1–2 W isolated gate drivers. |
| td(off) | 62 ns - supports precise timing control in phase-shifted full-bridge and LLC controllers. |
| EAS | 124 mJ (TJ = 25 °C) - withstands unclamped inductive energy during fault events without failure. |
| RthJC | 0.74 °C/W - enables >200 W power dissipation with standard heatsink mounting (ΔT = 150 °C). |
| VGS(th) | 3–5 V - ensures clean turn-on with standard 12 V gate drive while avoiding spurious activation near 0 V. |
Pinout & Package
STW15N95K5 is housed in a TO-247 package with isolated tab (pin 2), offering low thermal resistance and high-voltage isolation. The case is electrically connected to the drain terminal, requiring insulated mounting hardware when used in high-side configurations.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Lead) | Gate (G) | High-impedance control input; requires ≤±30 V drive; Zener-clamped to ±20 V for ESD protection. |
| 2 (Tab) | Drain (D) | Main high-voltage power terminal; electrically tied to metal tab; must be isolated from heatsink unless referenced to system ground. |
| 3 (Lead) | Source (S) | Power return path and gate reference; carries full load current; defines local ground for gate driver supply. |
Key Features
| Feature | Design Value |
|---|---|
| MDmesh K5 superjunction structure | Reduces RDS(on) × Qg FoM by >40% vs. prior-generation 900 V MOSFETs, enabling smaller magnetics and higher power density. |
| Zener-protected gate | Integrated gate-body Zener clamps transient overvoltage to ±20 V, eliminating need for external gate protection components. |
| 100% avalanche tested | Each unit undergoes single-pulse unclamped inductive switching test at IAR = 4 A, ensuring robustness in real-world fault conditions. |
| Low Crss (1 pF) | Minimizes Miller feedback, improving noise immunity and reducing risk of false turn-on during high dv/dt commutation. |
| TO-247 package with insulated tab | Provides 2.5 kV RMS insulation between leads and heatsink, simplifying safety-compliant mechanical design in Class I equipment. |
Applications
| Industrial AC-DC Power Supplies | Photovoltaic String Inverters |
|---|---|
|
Use Scenario: Primary-side switch in 3–5 kW three-phase rectifier + boost PFC stage operating from 400–690 VAC grid. IC Role / Device Role / Timing Role: High-voltage switching element handling 950 V blocking and 12 A conduction; synchronized to 50–100 kHz PWM controller. Use Value: 410 mΩ RDS(on) and 30 nC Qg reduce combined conduction/switching losses by ~18% versus legacy 900 V MOSFETs, directly improving system efficiency. |
Use Scenario: DC-DC boost stage in string-level PV inverters converting 600–1000 VDC input to 1200 VDC bus for H-bridge inversion. IC Role / Device Role / Timing Role: Unidirectional high-side switch in non-isolated boost converter; driven by isolated gate driver with 100 ns timing resolution. Use Value: 50 V/ns dv/dt ruggedness prevents false triggering during rapid bus transients caused by solar irradiance fluctuations. |
| Induction Heating Generators | High-Voltage Battery Chargers |
|
Use Scenario: Half-bridge switch in 1–3 kW resonant inverter driving series-LC tank at 20–100 kHz. IC Role / Device Role / Timing Role: Fast-switching power switch subjected to hard-commutated reverse recovery stress; operates with zero-voltage switching assist. Use Value: 444 ns trr and soft 32 A IRRM limit diode recovery losses and EMI generation during dead-time transitions. |
Use Scenario: Isolation-stage primary switch in 10–20 kW EV DC fast charger using dual-active-bridge topology. IC Role / Device Role / Timing Role: High-reliability 950 V switch in high-duty-cycle, thermally constrained environment; mounted on liquid-cooled heatsink. Use Value: 0.74 °C/W RthJC enables stable 12 A operation at TC = 100 °C, supporting continuous 95%+ efficiency across ambient range. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXTH12N90L2 | 900 V VDS, 520 mΩ RDS(on), 22 nC Qg, TO-247 package | Lower voltage rating limits use in 690 VAC systems; lower Qg improves switching efficiency but higher RDS(on) increases conduction loss. | Select when prioritizing switching loss reduction over voltage margin and thermal headroom. |
| IPP60R099C7 | 650 V VDS, 99 mΩ RDS(on), 49 nC Qg, TO-220 package | Insufficient voltage rating for 600 VAC-derived rails; unsuitable for direct rectified inputs above 450 VDC. | Only viable in low-input-voltage DC-DC stages downstream of bulk regulation; not a drop-in replacement. |
Compared with IXTH12N90L2 and IPP60R099C7, STW15N95K5 uniquely balances 950 V capability, 410 mΩ conduction resistance, and 30 nC gate charge - making it the only option among the three qualified for 690 VAC industrial PFC and certified for 2.5 kV isolation mounting.
Availability
STW15N95K5 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, photovoltaic string inverters, and high-voltage battery chargers requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for STW15N95K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.
STW15N95K5 belongs to the MDmesh K5 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-power-density switching applications in industrial power conversion where 900+ V blocking capability and low FoM are mandatory.
FAQ
What is the maximum continuous drain current at 100 °C case temperature?
The STW15N95K5 supports 7.6 A continuous drain current at TC = 100 °C, as specified in Table 1 of DS9942 Rev 3. This derating reflects thermal limitations of the TO-247 package and ensures safe operation within the SOA boundary at elevated temperatures.
Is the source-drain body diode suitable for synchronous rectification?
No - the intrinsic body diode has 444 ns reverse recovery time and 7 µC Qrr at 25 °C, which causes significant switching loss and EMI in synchronous rectifier configurations. External Schottky or GaN FETs are recommended for that role.
Does STW15N95K5 require negative gate voltage for reliable turn-off?
No - the device turns off fully with 0 V gate drive due to its 3–5 V threshold voltage. However, applying –5 V to –10 V improves noise immunity and ensures complete depletion during high dv/dt events, especially in half-bridge configurations.
Can STW15N95K5 be mounted directly to a grounded heatsink?
No - the metal tab is internally connected to the drain terminal. Mounting to a grounded heatsink creates a short between drain and system ground. An electrically isolating pad (e.g., silicone thermal pad with >2.5 kV dielectric strength) is required per the insulation rating.
STW15N95K5 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- SuperMESH5™
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 950 V
- Current - Continuous Drain (Id) @ 25°C:
- 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 500mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 40 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 900 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 170W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247-3
STW15N95K5 FAQ
1.How can I place an order for STW15N95K5 through Aetrix?
Please submit a Request for Quotation (RFQ) for STW15N95K5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STW15N95K5 reliable?
The price and inventory of STW15N95K5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW15N95K5 is usually 5 days.
3.What payment methods are accepted for STW15N95K5?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW15N95K5 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STW15N95K5?
STW15N95K5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STW15N95K5 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STW15N95K5?
For technical support, including STW15N95K5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW15N95K5 requirements.
6.How does Aetrix verify that STW15N95K5 is sourced from the original manufacturer or authorized distributors?
All STW15N95K5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW15N95K5 meets industry standards.
7.What is the process for return or replacement of STW15N95K5?
All STW15N95K5 units undergo pre-shipment inspection (PSI). If there is an issue with STW15N95K5, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STW15N95K5 part is unused and in its original packaging.
Return procedure for STW15N95K5:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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