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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW15NB50

Name: STW15NB50
Brand: STMicroelectronics
SKU: STW15NB50
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW15NB50

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW15NB50.pdf

Description:: MOSFET N-CH 500V 14.6A TO247-3

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Inventory:4,173

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Product details

Overview

STW15NB50 from STMicroelectronics is an N-channel 500 V, 14.6 A, 0.33 Ω R_DS(on) PowerMESH™ MOSFET in TO-247 package, designed for high-speed switching in high-voltage DC-AC converters and SMPS primary-side power stages. It features ±30 V gate-source rating, 100% avalanche tested, and extremely high dv/dt capability (4 V/ns).

For engineers reviewing the STW15NB50 datasheet, STW15NB50 pinout, STW15NB50 application, or STW15NB50 equivalent, key selection criteria include its 500 V V_DSS, low 0.33 Ω R_DS(on) at 10 V_GS, 60 nC total gate charge, 14.6 A continuous drain current at T_C = 25 °C, and TO-247 thermal resistance of 0.66 °C/W.

Technical Context

This MOSFET employs ST's proprietary PowerMESH™ layout and edge termination, delivering lowest R_DS(on)/area among 500 V devices in its era. Its 4 V/ns dv/dt rating enables robust operation under fast transient conditions without spurious turn-on.

The device integrates a low-charge, low-capacitance structure: C_iss = 2600 pF (typ), C_oss = 330 pF (typ), C_rss = 40 pF (typ), with Q_g = 60 nC (typ) and Q_gd = 27 nC (typ), supporting efficient hard-switching up to several hundred kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	500 V - supports 400 V DC bus designs with 25% margin for voltage spikes
R_DS(on)	0.33 Ω (typ) at V_GS = 10 V - enables <1.5 W conduction loss at 14.6 A
I_D (cont)	14.6 A at T_C = 25 °C - rated for high-current primary-side switching in 500–1000 W SMPS
Q_g	60 nC (typ) - determines gate drive power requirement and switching speed with 4.7 Ω resistor
dv/dt	4 V/ns - ensures immunity to false triggering during fast inductive turn-off transients
E_AS	850 mJ - withstands single-pulse unclamped inductive energy without failure
R_thj-case	0.66 °C/W - allows ~190 W dissipation at ΔT = 125 °C with minimal heatsink

Pinout & Package

TO-247 package: isolated metal tab (drain), three leads - pin 1 (gate), pin 2 (drain), pin 3 (source). Drain-connected tab provides low-inductance, high-current path and direct thermal coupling to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	High-impedance control input; requires ≤±30 V drive; 60 nC total charge must be sourced/sunk
Pin 2	Drain	Main high-voltage power terminal; electrically connected to metal tab; carries full load current
Pin 3	Source	Power return and reference node for gate drive; forms common node with driver ground in non-isolated topologies

Key Features

Feature	Design Value
PowerMESH™ cell architecture	Delivers 0.33 Ω R_DS(on) in 500 V class - reduces conduction loss by >20% vs. prior-generation planar MOSFETs
100% avalanche tested	Guarantees ruggedness under unclamped inductive switching - eliminates need for external snubbers in many SMPS designs
Low C_rss (40 pF typ)	Minimizes Miller effect, enabling stable gate drive with moderate RG and reducing risk of shoot-through in half-bridge configurations
High dv/dt immunity (4 V/ns)	Prevents false turn-on during fast voltage transitions - critical for reliable operation in high-frequency bridge circuits
Isolated package (V_ISO = 4000 V DC)	Enables direct mounting on insulated heatsinks without additional isolation hardware in industrial power supplies

Applications

Switch Mode Power Supplies (SMPS)

DC-AC Inverters for Welding Equipment

Use Scenario: Primary-side switching in 600–800 W offline flyback or forward converters operating at 60–100 kHz.

IC Role / Device Role / Timing Role: High-voltage power switch handling 400 V DC bus; driven by UC384x or similar PWM controller.

Use Value: Low R_DS(on) and gate charge reduce conduction and switching losses, improving efficiency to >88% at full load.

Use Scenario: H-bridge inverter stage converting 300–400 V DC to 20–100 kHz AC for IGBT gate drive or transformer-coupled arc initiation.

IC Role / Device Role / Timing Role: High-speed, high-dv/dt capable switch enabling precise pulse-width control of welding current waveform.

Use Value: 4 V/ns dv/dt rating prevents parasitic turn-on during rapid bus reversal, ensuring clean commutation and arc stability.

Uninterruptible Power Supplies (UPS)

Motor Drive Half-Bridge Stages

Use Scenario: Boost PFC and inverter stages in line-interactive UPS systems delivering 1–2 kVA output.

IC Role / Device Role / Timing Role: Main switching element in interleaved boost converter and full-bridge inverter; operated with soft-switching techniques.

Use Value: Avalanche ruggedness (850 mJ E_AS) absorbs energy from inductor current mismatch during transfer switching, enhancing system reliability.

Use Scenario: High-side/low-side pair in 3-phase inverter driving 0.75–2.2 kW induction motors at 4–16 kHz PWM frequency.

IC Role / Device Role / Timing Role: Fast-switching power switch with low Q_gd/Q_g ratio enabling clean dead-time control and reduced shoot-through risk.

Use Value: 27 nC Q_gd minimizes Miller plateau duration, allowing tighter dead-time setting without compromising efficiency or safety margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW20NK50Z	500 V, 20 A, 0.23 Ω R_DS(on), 90 nC Q_g, Zener-protected gate	Higher current rating but higher gate charge; better suited for lower-frequency, higher-power designs	Select when higher ID and integrated gate protection outweigh gate drive complexity
FQP13N50C	500 V, 13 A, 0.42 Ω R_DS(on), 42 nC Q_g, TO-220 package	Lower thermal performance (R_thj-case ≈ 2.5 °C/W); not avalanche rated	Choose only for cost-sensitive, lower-power (<300 W), non-avalanche-critical applications

Compared with STW20NK50Z and FQP13N50C, STW15NB50 offers optimal balance of low R_DS(on), moderate Q_g, proven avalanche ruggedness, and TO-247 thermal performance-making it preferred for 500–1000 W industrial SMPS where reliability and efficiency are jointly prioritized.

Availability

STW15NB50 is available at Aetrix Electronics and suitable for switch mode power supplies, DC-AC inverters for welding equipment, uninterruptible power supplies, and motor drive half-bridge stages requiring stable component supply and legacy industrial design continuity.

Supply support for STW15NB50 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

The STW15NB50 belongs to ST's PowerMESH™ high-voltage MOSFET product line, engineered specifically for rugged, high-efficiency primary-side switching in industrial power conversion systems demanding avalanche tolerance and high dv/dt immunity.

FAQ

Is STW15NB50 still in active production?

No - STW15NB50 is marked obsolete in ST's official documentation (dated June 1998). However, Aetrix Electronics maintains legacy inventory with full traceability and supports long-life industrial programs through controlled distribution and lifecycle coordination.

What is the maximum safe operating temperature for STW15NB50?

The absolute maximum junction temperature is 150 °C. Operation above 130 °C continuously degrades reliability; derating is required beyond T_C = 100 °C, where continuous drain current drops to 9.2 A. Thermal design must ensure R_thj-case + R_thcase-sink + R_thsink-amb keeps T_j ≤ 130 °C at full load.

Can STW15NB50 replace STW15NK50 in existing designs?

No - STW15NK50 is a later-generation 500 V MOSFET with different R_DS(on) (0.38 Ω), gate charge (45 nC), and SOA curve. While pin-compatible, differences in avalanche rating (STW15NK50 is not 100% tested), dv/dt (2.5 V/ns), and dynamic characteristics require revalidation of gate drive, snubber, and thermal design.

Does STW15NB50 require a gate resistor, and what value is recommended?

Yes - a gate resistor is mandatory to control dV/dt and prevent oscillation. For hard-switching at 100 kHz with 4.7 Ω drive (per datasheet test circuit), peak gate current stays within safe limits. Lower values (2.2–3.3 Ω) may be used for faster turn-on if gate driver can source >3 A peak; higher values (>10 Ω) reduce EMI but increase switching loss.

STW15NB50 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: PowerMESH™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 14.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 360mOhm @ 7.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 80 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 3400 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 190W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW15NB50 FAQ

1.How can I place an order for STW15NB50 through Aetrix?

Please submit a Request for Quotation (RFQ) for STW15NB50 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW15NB50 reliable?

The price and inventory of STW15NB50 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW15NB50 is usually 5 days.

3.What payment methods are accepted for STW15NB50?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW15NB50 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW15NB50?

STW15NB50 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW15NB50 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW15NB50?

For technical support, including STW15NB50 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW15NB50 requirements.

6.How does Aetrix verify that STW15NB50 is sourced from the original manufacturer or authorized distributors?

All STW15NB50 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW15NB50 meets industry standards.

7.What is the process for return or replacement of STW15NB50?

All STW15NB50 units undergo pre-shipment inspection (PSI). If there is an issue with STW15NB50, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW15NB50 part is unused and in its original packaging.

Return procedure for STW15NB50:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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