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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW15NM60N

Name: STW15NM60N
Brand: STMicroelectronics
SKU: STW15NM60N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW15NM60N

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW15NM60N.pdf

Description:: MOSFET N-CH 600V 14A TO247-3

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Product details

Overview

STW15NM60N from STMicroelectronics is a second-generation MDmesh™ N-channel 600 V power MOSFET in TO-247 package, delivering 14 A continuous drain current at 25°C, 0.270 Ω R_DS(on), and 37 nC total gate charge - optimized for high-efficiency AC-DC and DC-DC switching converters in industrial power supplies.

For engineers reviewing the STW15NM60N datasheet, STW15NM60N pinout, STW15NM60N application, or STW15NM60N equivalent, key selection criteria include avalanche ruggedness (6 A I_AS, 300 mJ E_AS), low C_iss/C_oss (1250 pF / 100 pF), thermal resistance (R_thj-case = 1.0 °C/W), and TO-247 mechanical compatibility with high-power heatsinking.

Technical Context

This device implements ST's second-generation MDmesh™ vertical structure combined with strip layout to minimize conduction and switching losses simultaneously. It features fully rated 600 V V_DSS, 100% unclamped inductive avalanche tested operation, and low gate input resistance (6.0 Ω) enabling robust gate drive stability.

The MOSFET supports fast switching (t_d(on) = 12 ns, t_f = 30 ns @ 4.7 Ω gate resistor) under 300 V/7 A resistive load conditions, with integrated source-drain diode exhibiting 390 ns reverse recovery time and 5 µC Q_rr at 25°C - critical for ZVS and quasi-resonant topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - Withstands full mains-referenced DC bus in 400 V rectified systems with margin
R_DS(on)	0.270 Ω @ V_GS = 10 V, I_D = 7 A - Enables <1.5 W conduction loss at 14 A
Q_g	37 nC - Low gate charge reduces driver power and enables >100 kHz operation with standard gate drivers
C_iss	1250 pF @ V_DS = 50 V - Minimizes Miller effect and improves dv/dt immunity
R_thj-case	1.0 °C/W - Supports 125 W dissipation with modest heatsink (ΔT = 125°C)
E_AS	300 mJ - Enables reliable operation in hard-switched PFC and LLC primary switches without snubbers
I_D (cont)	14 A @ T_C = 25°C - Rated for continuous conduction mode (CCM) operation in 500–1000 W SMPS

Pinout & Package

STW15NM60N is housed in a TO-247 package - a through-hole, 3-terminal power package with isolated metal tab for direct heatsink mounting and high thermal conductivity (R_thj-case = 1.0 °C/W). The case is electrically connected to the drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Power return path for load current	Low-inductance connection point for PCB ground plane; referenced to driver common
2 (Gate)	Control electrode for channel modulation	High-impedance input requiring <37 nC charge; sensitive to ringing - needs local RC snubber
3 (Drain)	Main high-voltage power terminal	Internally bonded to metal tab; must be isolated from heatsink unless system design permits drain-referenced cooling

Key Features

Feature	Design Value
Second-generation MDmesh™ structure	Reduces R_DS(on) × Q_g figure-of-merit by ~30% vs. first-gen, improving efficiency in 65–300 kHz converters
100% unclamped inductive avalanche rated	Guarantees single-pulse ruggedness up to 6 A/300 mJ - eliminates need for external clamping in flyback or forward converters
Low C_oss (100 pF) & C_rss (10 pF)	Enables soft switching in resonant topologies and reduces EMI generation during turn-off
ECOPACK® lead-free construction	Complies with RoHS and JEDEC JESD97; suitable for industrial and consumer-grade reflow/soldering processes
High dv/dt immunity (30 V/ns)	Withstands rapid voltage transients in high-side switching configurations without spurious turn-on

Applications

Industrial AC-DC Power Supplies

Server & Telecom Rectifiers

Use Scenario: Primary-side switch in 800 W active clamp forward converter operating at 200 kHz.

IC Role / Device Role / Timing Role: High-voltage power switch handling 400 V DC bus with synchronous rectification control timing.

Use Value: 0.270 Ω R_DS(on) and 37 nC Q_g reduce conduction + switching losses to <3.2 W, enabling >94% efficiency at full load.

Use Scenario: Main switch in 1 kW telecom rectifier with phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: Hard-switched primary FET synchronized to 100–150 kHz PWM with precise dead-time control.

Use Value: 1.0 °C/W R_thj-case allows direct mounting to cold plate, maintaining T_j < 125°C under 14 A peak current.

Motor Drive Inverters

Renewable Energy Converters

Use Scenario: Upper-leg IGBT replacement in 3-phase 7.5 kW HVAC inverter driving PMSM motor.

IC Role / Device Role / Timing Role: High-side switching element in 6–12 kHz PWM-driven bridge leg.

Use Value: Avalanche rating (300 mJ) absorbs inductive kickback during short-circuit events without failure.

Use Scenario: DC-link switch in 2 kW solar microinverter interfacing PV array to H-bridge inverter stage.

IC Role / Device Role / Timing Role: Unidirectional energy transfer switch in bidirectional DC-DC stage with 50 kHz switching.

Use Value: Low C_iss/C_oss ratio minimizes capacitive losses during zero-voltage switching transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP15NM60N	Same die, TO-220 package; R_thj-case = 4.2 °C/W vs. 1.0 °C/W	Limited to ≤300 W due to higher thermal resistance; unsuitable for forced-air-free designs	Select when cost-sensitive, lower-power (<250 W), or space-constrained PCB layouts require TO-220 footprint
IPP60R190C6	650 V, 0.190 Ω, 19 A, CoolMOS™ C6; Q_g = 32 nC, C_oss = 75 pF	Better conduction loss but tighter gate drive timing requirements; requires negative turn-off bias for reliability	Select for highest efficiency in >500 W designs where gate drive complexity and layout precision can be controlled

Compared with STP15NM60N, STW15NM60N delivers 4.2× better thermal performance for same silicon, enabling compact heatsinks; versus IPP60R190C6, it trades 0.08 Ω higher R_DS(on) for superior avalanche ruggedness and simpler gate drive design.

Availability

STW15NM60N is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, telecom rectifiers, and motor drive inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STW15NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.

The MDmesh™ MOSFET product line targets high-efficiency switched-mode power conversion, emphasizing low R_DS(on) × Q_g FoM, avalanche ruggedness, and thermal robustness for industrial and server-grade power stages.

FAQ

Is STW15NM60N pin-compatible with STP15NM60N?

No - STW15NM60N uses TO-247 (3-pin, drain-tab) while STP15NM60N uses TO-220 (3-pin, drain-tab). Though both have identical pin numbering (1=Source, 2=Gate, 3=Drain), TO-247 has larger creepage/clearance, higher power rating, and different mounting hole pattern. PCB redesign is required for substitution.

What is the maximum recommended gate resistor value for reliable switching?

For stable operation without oscillation, ST recommends R_G between 4.7 Ω and 22 Ω. At 4.7 Ω, measured t_d(on) = 12 ns and t_f = 30 ns; values >47 Ω increase switching losses significantly and risk shoot-through in half-bridge configurations due to slower turn-off.

Does STW15NM60N support avalanche operation in repetitive mode?

No - the datasheet specifies I_AS = 6 A and E_AS = 300 mJ for single-pulse avalanche only. Repetitive avalanche is not characterized or guaranteed. System design must avoid repeated inductive energy dumping into the MOSFET to prevent cumulative junction degradation.

Can STW15NM60N be used in synchronous rectification topologies?

No - it is an N-channel enhancement-mode MOSFET intended for high-side or low-side switching, not synchronous rectification. Its body diode has relatively high V_SD (1.3 V) and slow trr (390 ns), making it unsuitable as a freewheeling device in SR applications where low forward drop and fast recovery are essential.

STW15NM60N Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 299mOhm @ 7A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 37 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1250 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW15NM60N FAQ

1.How can I place an order for STW15NM60N through Aetrix?

Please submit a Request for Quotation (RFQ) for STW15NM60N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW15NM60N reliable?

The price and inventory of STW15NM60N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW15NM60N is usually 5 days.

3.What payment methods are accepted for STW15NM60N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW15NM60N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW15NM60N?

STW15NM60N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW15NM60N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW15NM60N?

For technical support, including STW15NM60N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW15NM60N requirements.

6.How does Aetrix verify that STW15NM60N is sourced from the original manufacturer or authorized distributors?

All STW15NM60N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW15NM60N meets industry standards.

7.What is the process for return or replacement of STW15NM60N?

All STW15NM60N units undergo pre-shipment inspection (PSI). If there is an issue with STW15NM60N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW15NM60N part is unused and in its original packaging.

Return procedure for STW15NM60N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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