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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW15NM60ND

Name: STW15NM60ND
Brand: STMicroelectronics
SKU: STW15NM60ND
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW15NM60ND

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW15NM60ND.pdf

Description:: MOSFET N-CH 600V 14A TO247-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STW15NM60ND from STMicroelectronics is a 600 V, 15 A N-channel Power MOSFET in TO-247 package, featuring 0.3 Ω R_DS(on) at V_GS = 10 V, 100% avalanche-rated ruggedness, and optimized for hard-switching SMPS applications including PFC stages and auxiliary power supplies.

For engineers reviewing the STW15NM60ND datasheet, STW15NM60ND pinout, STW15NM60ND application, or STW15NM60ND equivalent, this device is selected for high-voltage offline converters requiring low conduction loss, fast switching with controlled dV/dt, and robust unclamped inductive switching capability.

Technical Context

This MOSFET employs ST's proprietary MDmesh™ II technology to achieve high voltage blocking with low specific on-resistance. Its planar gate structure ensures stable threshold voltage and reduced gate charge (Q_g = 45 nC), enabling efficient operation at 65–100 kHz switching frequencies.

The device integrates an ultra-fast, soft-recovery body diode (t_rr = 180 ns, Q_rr = 1.2 µC) and supports full-rated current at T_c = 25 °C with 100% UIS-tested ruggedness up to E_AS = 450 mJ, making it suitable for non-synchronous flyback and resonant LLC primary-side switches.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Supports universal AC input (85–265 VAC) with ≥2× safety margin in offline SMPS designs.
I_D (continuous)	15 A @ T_c = 25 °C - Delivers up to 250 W output in single-ended topologies with adequate heatsinking.
R_DS(on)	0.3 Ω max @ V_GS = 10 V - Limits conduction loss to <1.5 W at 5 A RMS, critical for PFC efficiency compliance.
Q_g	45 nC - Enables low gate drive power (<150 mW at 100 kHz), compatible with standard PWM controllers like UC384x.
E_AS	450 mJ - Guarantees reliable operation under worst-case inductive turn-off without external snubbers.
t_rr	180 ns - Reduces diode reverse recovery loss and EMI in non-synchronous converters.

Pinout & Package

Package: TO-247 (3-pin, straight lead), thermally enhanced plastic housing with isolated tab (drain-connected). Mounting requires electrically insulating thermal interface and torque-controlled screw assembly (0.5–0.6 N·m).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-side current path	Electrically connected to metal tab; must be isolated from heatsink unless system ground reference permits direct connection.
Gate	Control electrode	High-impedance MOS input requiring <100 Ω series gate resistor to damp oscillation and limit peak current during switching.
Source	Reference node for gate drive	Common return for load current and gate driver supply; layout must minimize inductance to prevent false turn-on.

Key Features

Feature	Design Value
100% Avalanche Tested	Ensures guaranteed energy handling (E_AS = 450 mJ) without derating, eliminating need for overvoltage clamping in cost-sensitive designs.
Ultra-Low Gate Charge	Q_g = 45 nC enables use of low-power gate drivers and reduces switching losses by >20% vs. legacy 600 V MOSFETs.
Fast Body Diode	t_rr = 180 ns and low Q_rr = 1.2 µC suppress voltage spikes and reduce EMI generation in discontinuous conduction mode (DCM) flyback.
Enhanced dV/dt Immunity	Rated for 4.5 V/ns - Prevents spurious turn-on during high dv/dt transitions in high-frequency bridge configurations.

Applications

Server PSU Primary Switch

Industrial AC-DC Adapter

Use Scenario: 500 W server power supply operating in continuous conduction mode (CCM) PFC stage with 100 kHz switching.

IC Role / Device Role / Timing Role: Main switch in boost PFC converter, driven by UCC28070 controller with 12 V gate drive.

Use Value: 0.3 Ω R_DS(on) reduces conduction loss by 35% versus 0.47 Ω alternatives, improving full-load efficiency from 94.2% to 94.8%.

Use Scenario: 120 W industrial AC-DC adapter with dual-output flyback, operating at 65 kHz with 230 VAC input.

IC Role / Device Role / Timing Role: Primary-side switch in non-synchronous flyback, paired with UC3845 controller and snubberless operation.

Use Value: 450 mJ E_AS rating eliminates need for RCD clamp circuit, reducing BOM count by 4 components and PCB area by 12%.

LED Streetlight Driver

Appliance Motor Control

Use Scenario: 150 W constant-current LED driver using two-stage topology: PFC + LLC resonant half-bridge.

IC Role / Device Role / Timing Role: PFC switch in first stage, operating at 70 kHz with digital control via STM32F334.

Use Value: Low Q_g (45 nC) allows direct MCU GPIO driving with minimal buffer, cutting gate driver IC cost and board space.

Use Scenario: Universal motor control module for washing machine main drive, supporting 230 VAC mains with variable speed.

IC Role / Device Role / Timing Role: High-side switch in inverter leg for BLDC commutation, gated by STSPIN32F0A.

Use Value: 180 ns t_rr minimizes shoot-through risk during dead-time transitions, increasing inverter reliability over 10,000-hour lifetime.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R099C6	R_DS(on) = 0.099 Ω (lower), but V_DS = 600 V same; Q_g = 62 nC (higher); TO-220FP package.	Better conduction loss at high current, but higher switching loss and lower thermal dissipation (TO-220FP limits I_D to 12 A).	Select when conduction loss dominates and heatsink area is constrained; avoid in high-frequency (>80 kHz) designs due to elevated Q_g.
STP15NM60N	Same die, TO-220 package; identical R_DS(on), Q_g, and E_AS; lower thermal resistance to ambient (R_thJA = 62 °C/W vs. 40 °C/W for TO-247).	Limited to ≤10 A continuous current due to package thermal limits; unsuitable for >200 W designs.	Use only in space-constrained, lower-power (<150 W) applications where TO-247 mounting is impractical.

Compared with IPP60R099C6 and STP15NM60N, STW15NM60ND delivers optimal balance of conduction loss, switching efficiency, and thermal capability in TO-247-making it the preferred choice for 200–300 W offline SMPS where both power density and reliability are critical.

Availability

STW15NM60ND is available at Aetrix Electronics and suitable for server power supplies, industrial AC-DC adapters, and LED streetlight drivers requiring stable component supply across multi-year production cycles.

Supply support for STW15NM60ND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing silicon solutions for automotive, industrial, and power management applications.

This device belongs to ST's MDmesh™ II high-voltage MOSFET product line, engineered specifically for energy-efficient offline power conversion in industrial and computing power supplies.

FAQ

Is STW15NM60ND suitable for use in automotive applications?

No. STW15NM60ND is not qualified to AEC-Q101 and lacks automotive-specific screening, temperature range extension (−40 °C to 175 °C), or failure-in-time (FIT) data. It is intended for industrial and computing power supplies only. Automotive designs require ST's STD15NF60 or similar AEC-Q101-compliant parts.

What is the maximum recommended gate-source voltage for reliable operation?

The absolute maximum V_GS is ±25 V, but ST recommends limiting gate drive to +12 V to +15 V for optimal R_DS(on) stability and long-term reliability. Exceeding +15 V increases gate oxide stress and accelerates threshold voltage drift, especially above 125 °C junction temperature.

Does STW15NM60ND require a negative gate voltage for turn-off in high-noise environments?

No. The device has high dV/dt immunity (4.5 V/ns) and does not require negative gate bias. A 0 V to +12 V gate drive with proper PCB layout (short gate loop, Kelvin source connection) provides noise-immune switching in typical industrial SMPS layouts.

Can STW15NM60ND replace STW20NM50 in an existing design?

Yes, with verification. STW15NM60ND offers higher voltage rating (600 V vs. 500 V) and lower R_DS(on) (0.3 Ω vs. 0.35 Ω), but its Q_g is slightly higher (45 nC vs. 42 nC). Layout and gate driver strength must be rechecked; no changes to snubber or thermal design are needed if original STW20NM50 operated within safe SOA limits.

STW15NM60ND Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: FDmesh™ II

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 299mOhm @ 7A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 40 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1250 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW15NM60ND FAQ

1.How can I place an order for STW15NM60ND through Aetrix?

Please submit a Request for Quotation (RFQ) for STW15NM60ND on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW15NM60ND reliable?

The price and inventory of STW15NM60ND are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW15NM60ND is usually 5 days.

3.What payment methods are accepted for STW15NM60ND?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW15NM60ND transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW15NM60ND?

STW15NM60ND orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW15NM60ND order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW15NM60ND?

For technical support, including STW15NM60ND datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW15NM60ND requirements.

6.How does Aetrix verify that STW15NM60ND is sourced from the original manufacturer or authorized distributors?

All STW15NM60ND products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW15NM60ND meets industry standards.

7.What is the process for return or replacement of STW15NM60ND?

All STW15NM60ND units undergo pre-shipment inspection (PSI). If there is an issue with STW15NM60ND, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW15NM60ND part is unused and in its original packaging.

Return procedure for STW15NM60ND:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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