STMicroelectronics STW160N75F3

Overview

STW160N75F3 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in TO-247 package, rated for 75 V drain-source voltage, 4 mΩ maximum R_DS(on) at V_GS = 10 V, and 120 A continuous drain current at T_C = 25°C. It features ultra-low on-resistance, 100% avalanche tested ruggedness, and low gate charge (85 nC), making it suitable for high-efficiency DC-DC converters and motor drive half-bridges.

For engineers reviewing the STW160N75F3 datasheet, STW160N75F3 pinout, STW160N75F3 application, or STW160N75F3 equivalent, key selection criteria include its 75 V V_DS, 4 mΩ R_DS(on), 85 nC total gate charge, 330 W power dissipation at T_C = 25°C, and TO-247 thermal resistance of 0.45 °C/W junction-to-case - all critical for high-current switching reliability.

Technical Context

This STripFET™ III process MOSFET delivers high packing density for low conduction loss and optimized gate charge trade-offs. Its 20 V/ns dv/dt rating and 600 mJ single-pulse avalanche energy support robust operation under inductive switching stress.

The device exhibits 1.5 V source-drain forward voltage at 120 A and 70 ns reverse recovery time under defined di/dt conditions, enabling efficient synchronous rectification and unclamped inductive load handling without external freewheeling diode dependency.

Key Specifications

Pinout & Package

STW160N75F3 uses a TO-247 package with three leads: Gate (pin 1), Drain (pin 2), Source (pin 3). The metal tab is electrically connected to the Drain terminal and must be isolated from heatsink unless circuit topology permits common-drain configuration.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRFP4668PBF and IXFH120N075T2, STW160N75F3 offers the best balance of low gate charge (85 nC) and rugged avalanche rating (600 mJ), making it optimal for cost-constrained, thermally demanding motor drives where driver simplicity and fault tolerance are prioritized over marginal R_DS(on) improvement.

Availability

STW160N75F3 is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and high-power LED drivers requiring stable component supply and long-term production continuity.

Supply support for STW160N75F3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STW160N75F3 belongs to the STripFET™ III family, engineered specifically for high-current, high-efficiency power conversion systems where low R_DS(on), robust avalanche capability, and fast switching are essential.

FAQ

What is the maximum continuous drain current for STW160N75F3 at 100°C case temperature?

The STW160N75F3 maintains 120 A continuous drain current rating at T_C = 100°C, as specified in Table 2 of the official datasheet. This reflects derating independence within the 25–100°C case temperature range due to package-limited current handling rather than thermal limitation.

Is STW160N75F3 suitable for use in synchronous rectification circuits?

Yes - its 1.5 V source-drain forward voltage at 120 A and 70 ns reverse recovery time (t_rr) support efficient synchronous rectification in DC-DC converters. However, its body diode softness factor is not characterized, so external Schottky clamping may be needed in high-di/dt flyback designs.

Does STW160N75F3 require a negative gate voltage for reliable turn-off?

No - the device has a gate threshold voltage (V_GS(th)) of 2–4 V and is fully enhanced at V_GS = 10 V. A gate drive range of 0 V to +10 V is sufficient; negative gate bias is unnecessary and not recommended per absolute maximum rating (V_GS = ±20 V).

Can STW160N75F3 be mounted directly to a heatsink without electrical isolation?

No - the metal tab is internally connected to the Drain terminal. Direct mounting to a grounded heatsink creates a short circuit unless the circuit topology explicitly requires the Drain to be at heatsink potential. Electrical isolation using mica or ceramic washers is mandatory in most applications.