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STMicroelectronics STW16N65M5

Name: STW16N65M5
Brand: STMicroelectronics
SKU: STW16N65M5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW16N65M5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW16N65M5.pdf

Description:: MOSFET N-CH 650V 12A TO247-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STW16N65M5 from STMicroelectronics is an N-channel 650 V, 12 A MDmesh™ V Power MOSFET in TO-247 package with R_DS(on) = 0.230 Ω (typ), 100% avalanche tested, and high dv/dt capability (15 V/ns). It delivers low conduction loss and excellent switching performance for high-efficiency offline SMPS, PFC stages, and industrial motor drives.

For engineers reviewing the STW16N65M5 datasheet, STW16N65M5 pinout, STW16N65M5 application, or STW16N65M5 equivalent, key selection criteria include its 650 V V_DSS, 0.230 Ω R_DS(on) at V_GS = 10 V, 150 °C max junction temperature, TO-247 thermal resistance (R_thj-case = 1.38 °C/W), and 200 mJ single-pulse avalanche energy rating.

Technical Context

This device uses ST's MDmesh™ V vertical silicon process combined with PowerMESH™ horizontal layout to achieve industry-leading R_DS(on) × area efficiency. Its 650 V breakdown voltage (V_(BR)DSS) is guaranteed ≥650 V at I_D = 1 mA, with typical R_DS(on) of 0.230 Ω at V_GS = 10 V and I_D = 6 A.

The MOSFET features fast intrinsic body diode recovery (t_rr = 300 ns typ at T_j = 25 °C), low gate charge (Q_g = 31 nC typ), and robust unclamped inductive switching capability-validated by 100% production avalanche testing per JEDEC JESD24-1.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - Withstands DC bus voltages up to 400 V in 3-phase rectified systems with margin for transients.
R_DS(on) max	0.279 Ω - Ensures <1.5 W conduction loss at 12 A continuous drain current (T_C = 25 °C).
I_D cont @ T_C=100°C	7.3 A - Supports sustained operation in thermally constrained enclosures without derating below 12 A.
E_AS	200 mJ - Enables reliable operation in hard-switched topologies with unclamped inductive loads.
dv/dt immunity	15 V/ns - Prevents false turn-on during high-speed switching in noisy power converter environments.
Q_g	31 nC - Reduces gate drive power requirement and enables use with standard 1–2 A peak gate drivers.
t_rr	300 ns - Minimizes reverse recovery losses when used with fast external diodes or in synchronous rectification.

Pinout & Package

STW16N65M5 is housed in a TO-247 package with isolated tab (drain-connected), optimized for high-power dissipation and heatsink mounting. Thermal resistance junction-to-case is 1.38 °C/W (max), enabling >90 W continuous power handling with adequate heatsinking.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Power return path for load current	Low-inductance connection point for PCB ground plane routing; referenced to gate driver common.
2 (Gate)	Control terminal for channel modulation	High-impedance input requiring <100 nA leakage; driven with 10 V logic-level signal for full enhancement.
3 (Drain)	Main high-voltage power terminal	Internally connected to metal tab; must be electrically isolated from heatsink unless system design permits drain-referenced cooling.

Key Features

Feature	Design Value
MDmesh™ V silicon technology	Delivers lowest R_DS(on) × area among 650 V silicon MOSFETs, reducing die size and cost per watt.
100% avalanche rated	Guarantees ruggedness against inductive energy spikes without external snubbers in flyback or LLC resonant converters.
High dv/dt immunity (15 V/ns)	Eliminates need for negative gate turn-off bias in high-noise bridge-leg configurations.
Low Q_gd/Q_g ratio (≈0.39)	Improves Miller immunity and reduces switching instability during hard commutation events.
ECOPACK® compliant	Meets RoHS and halogen-free requirements for industrial and consumer power supply certifications.

Applications

Server PSU Primary Switch

Industrial PFC Boost Stage

Use Scenario: High-density 1U server power supplies operating at 100–240 VAC input with 80 PLUS Titanium efficiency targets.

IC Role / Device Role / Timing Role: Main switch in continuous conduction mode (CCM) boost PFC front-end, switching at 65–100 kHz.

Use Value: 0.230 Ω R_DS(on) cuts conduction loss by ~22% vs. legacy 650 V MOSFETs, directly improving full-load efficiency by 0.4–0.6%.

Use Scenario: 3 kW industrial motor drive with active front-end rectification and regenerative braking.

IC Role / Device Role / Timing Role: High-side switch in three-phase Vienna rectifier, operating at 50 kHz with soft-switching assist.

Use Value: 200 mJ E_AS withstands regenerative energy surges without failure, eliminating need for external clamping circuits.

Solar Microinverter DC-DC Stage

EV Onboard Charger AC/DC Front-End

Use Scenario: Single-phase microinverters converting 30–60 V PV string output to 230 VAC grid interface.

IC Role / Device Role / Timing Role: Primary switch in interleaved flyback or forward converter operating at 130 kHz.

Use Value: 300 ns t_rr minimizes body diode conduction loss during ZVS transitions, increasing light-load efficiency by 1.2%.

Use Scenario: Bidirectional 6.6 kW OBC in plug-in hybrid vehicles, supporting both AC charging and vehicle-to-grid (V2G) modes.

IC Role / Device Role / Timing Role: Bridge-leg switch in dual-active-bridge (DAB) isolation stage, switching at 150–200 kHz.

Use Value: 15 V/ns dv/dt rating ensures stable gate control under high di/dt conditions during phase-shift modulation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP65R041CFD7	R_DS(on) = 0.041 Ω (650 V), higher capacitance (C_iss = 2250 pF), no avalanche rating	Better conduction loss but requires careful gate drive design due to higher C_iss and lacks avalanche ruggedness	Preferable only in soft-switched topologies where avalanche stress is absent and thermal headroom allows lower R_DS(on).
IXFH32N60P	R_DS(on) = 0.13 Ω (600 V), TO-247 package, 100% avalanche tested, slower t_rr (500 ns)	Lower voltage rating limits use to ≤380 V DC bus; higher reverse recovery loss impacts efficiency in high-frequency PFC	Acceptable for cost-sensitive 600 V designs where 650 V margin is not required and switching frequency <50 kHz.

Compared with IPP65R041CFD7 and IXFH32N60P, STW16N65M5 uniquely balances 650 V rating, 0.230 Ω R_DS(on), 200 mJ avalanche energy, and 300 ns t_rr-making it optimal for hard-switched industrial PFC and server SMPS where ruggedness and efficiency coexist.

Availability

STW16N65M5 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, solar microinverters, and EV onboard chargers requiring stable component supply across multi-year production cycles.

Supply support for STW16N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.

STW16N65M5 belongs to the MDmesh™ V Power MOSFET product line, engineered specifically for high-efficiency, high-reliability offline power conversion in 650 V applications demanding low R_DS(on), fast switching, and rugged avalanche performance.

FAQ

What is the maximum continuous drain current at case temperature of 100 °C?

The STW16N65M5 supports 7.3 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the official datasheet (Doc ID 15210 Rev 4). This rating reflects thermal derating due to reduced heat dissipation capability at elevated case temperatures and assumes proper heatsinking with R_thj-case ≤ 1.38 °C/W.

Is the TO-247 package tab electrically isolated?

Yes-the TO-247 package used for STW16N65M5 has an electrically isolated metal tab internally connected to the drain terminal. The isolation withstand voltage is rated at 2500 V RMS (1 s, T_C = 25 °C), allowing direct mounting to grounded heatsinks only when drain-referenced cooling is acceptable in the system architecture.

Does STW16N65M5 require negative gate voltage for reliable turn-off?

No-STW16N65M5 features high dv/dt immunity (15 V/ns) and low gate threshold voltage (3–5 V), enabling robust turn-off with 0 V gate drive. Negative gate bias is unnecessary in standard hard-switched applications, though it may be applied in ultra-high-noise environments to further suppress spurious turn-on.

How does the body diode performance compare to discrete SiC Schottky diodes?

The integrated body diode has t_rr = 300 ns and Q_rr = 3.5 µC at T_j = 25 °C, which is significantly slower than SiC Schottky diodes (typically <25 ns t_rr). For high-frequency ZVS or zero-current switching, an external SiC diode is recommended; however, the body diode is fully rated for 12 A continuous and 48 A pulsed operation per datasheet Table 2.

STW16N65M5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ V

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 279mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 31 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1250 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 90W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW16N65M5 FAQ

1.How can I place an order for STW16N65M5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STW16N65M5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW16N65M5 reliable?

The price and inventory of STW16N65M5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW16N65M5 is usually 5 days.

3.What payment methods are accepted for STW16N65M5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW16N65M5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW16N65M5?

STW16N65M5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW16N65M5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW16N65M5?

For technical support, including STW16N65M5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW16N65M5 requirements.

6.How does Aetrix verify that STW16N65M5 is sourced from the original manufacturer or authorized distributors?

All STW16N65M5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW16N65M5 meets industry standards.

7.What is the process for return or replacement of STW16N65M5?

All STW16N65M5 units undergo pre-shipment inspection (PSI). If there is an issue with STW16N65M5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW16N65M5 part is unused and in its original packaging.

Return procedure for STW16N65M5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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