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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW16NK60Z

Name: STW16NK60Z
Brand: STMicroelectronics
SKU: STW16NK60Z
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW16NK60Z

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW16NK60Z.pdf

Description:: MOSFET N-CH 600V 14A TO247-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STW16NK60Z from STMicroelectronics is an N-channel 600 V, 0.38 Ω (typ), 14 A Zener-protected SuperMESH™ Power MOSFET in TO-247 package, designed for high-voltage switching in offline SMPS, PFC stages, and industrial motor drives where robust avalanche capability and fast dv/dt immunity are required.

For engineers reviewing the STW16NK60Z datasheet, STW16NK60Z pinout, STW16NK60Z application, or STW16NK60Z equivalent, key selection criteria include its 600 V V_DSS, 190 W T_C=25°C power dissipation, 100% avalanche tested rating, integrated gate-source Zener protection (30 V), and low C_iss (2650 pF) for efficient high-frequency operation.

Technical Context

This device implements ST's SuperMESH™ layout-evolved from PowerMESH™-to achieve lower R_DS(on) while maintaining superior dv/dt immunity (4.5 V/ns) and reduced intrinsic capacitances. Its internal back-to-back gate-source Zener diodes provide ESD protection (6 kV HBM) and transient clamping without external components.

The MOSFET features a fast source-drain diode with t_rr = 490 ns (T_j = 25°C) and Q_rr = 5.4 nC, enabling reliable hard-switching in bridge configurations. Thermal resistance R_thj-case is 0.66 °C/W, supporting high-power density designs when mounted on heatsinks.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - Withstands full mains-related transients in 400 V DC bus applications
R_DS(on) max	0.42 Ω - Enables <1.2 W conduction loss at 14 A, reducing thermal load
I_D (T_C=25°C)	14 A - Continuous current rating limited by TO-247 package thermal capacity
E_AS	360 mJ - Single-pulse avalanche energy supports unclamped inductive switching
C_iss	2650 pF - Low input capacitance reduces gate drive power and improves switching speed
Q_g	86 nC - Total gate charge determines driver sizing and turn-on time in hard-switched topologies
dv/dt capability	4.5 V/ns - Ensures noise immunity and prevents spurious turn-on in high-dV/dt environments
BV_GSO	30 V - Integrated gate-source Zener clamps voltage spikes to protect gate oxide integrity

Pinout & Package

STW16NK60Z uses the TO-247 package-a through-hole, isolated-tab power package with industry-standard mechanical dimensions and 0.66 °C/W junction-to-case thermal resistance. The tab is electrically connected to the drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
1 (Left)	Gate (G)	Control electrode; requires 10 V drive for full enhancement; protected by integrated 30 V Zener
2 (Center)	Drain (D)	Main high-side current path; connected to metal tab for heatsinking and electrical isolation
3 (Right)	Source (S)	Reference node for gate drive; carries full load current and reverse recovery current of body diode

Key Features

Feature	Design Value
100% avalanche tested	Guarantees ruggedness under unclamped inductive switching stress without derating
Extremely high dv/dt capability	4.5 V/ns rating prevents false triggering in noisy high-voltage gate-drive layouts
Gate charge minimized	86 nC total gate charge enables efficient 100–300 kHz operation with standard gate drivers
Zener-protected gate	Integrated 30 V gate-source Zener eliminates need for external TVS, saving board space and BOM cost
Low intrinsic capacitances	C_oss = 285 pF and C_rss = 62 pF reduce switching losses and improve EMI profile

Applications

Industrial Motor Drives

Server PSU Primary Switch

Use Scenario: Half-bridge inverter stage for 3-phase BLDC motor control in HVAC compressors and pumps.

IC Role / Device Role / Timing Role: High-side switching element handling 14 A continuous current at 600 V bus voltage.

Use Value: Avalanche rating and 4.5 V/ns dv/dt immunity prevent failure during motor phase commutation transients.

Use Scenario: Main switch in active clamp forward or LLC resonant converter in 1U server PSUs.

IC Role / Device Role / Timing Role: Primary-side power switch operating at 200–300 kHz with zero-voltage switching assist.

Use Value: Low C_iss (2650 pF) and Q_g (86 nC) minimize gate drive loss and enable precise timing control.

PFC Boost Converter

Industrial UPS Inverter

Use Scenario: Boost switch in continuous conduction mode (CCM) PFC front-end for 3 kW telecom rectifiers.

IC Role / Device Role / Timing Role: Fast-switching, high-voltage switch carrying 14 A peak current with low conduction loss.

Use Value: 0.38 Ω R_DS(on) limits conduction loss to <0.75 W at full load, easing thermal design.

Use Scenario: Output H-bridge switch in double-conversion UPS delivering clean 230 V AC under grid failure.

IC Role / Device Role / Timing Role: Robust 600 V switching device handling bidirectional current and reverse recovery stress.

Use Value: Body diode t_rr = 490 ns and Q_rr = 5.4 nC ensure low switching loss and minimal voltage overshoot during freewheeling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R099C7	650 V, 0.099 Ω, TO-220FP; lower R_DS(on) but higher Q_g (105 nC) and no integrated Zener	Suitable for higher-efficiency 650 V designs where external gate protection is acceptable	Prefer when lower conduction loss dominates over gate drive complexity and transient robustness
STW20NK60Z	600 V, 0.30 Ω, 17 A, TO-247; improved R_DS(on) and current rating, same Zener protection and package	Drop-in upgrade path for higher current or lower loss in existing STW16NK60Z layouts	Select when thermal margin is tight and 17 A/0.30 Ω enables downsizing heatsink or increasing output power

Compared with IPP60R099C7, STW16NK60Z trades higher R_DS(on) for guaranteed avalanche ruggedness and integrated gate protection-critical in cost-sensitive industrial inverters. Against STW20NK60Z, it offers proven field reliability at lower cost where 14 A suffices.

Availability

STW16NK60Z is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, and PFC boost converters requiring stable component supply across multi-year production cycles.

Supply support for STW16NK60Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

STW16NK60Z belongs to the SuperMESH™ high-voltage MOSFET product line, engineered specifically for rugged, high-efficiency switching in offline power conversion and motor control systems demanding reliability under harsh electrical stress.

FAQ

What is the maximum safe operating temperature for STW16NK60Z?

The absolute maximum junction temperature is 150 °C. Operation above this risks permanent degradation of R_DS(on) and avalanche capability. With R_thj-case = 0.66 °C/W and 190 W rated dissipation at T_C = 25 °C, heatsink design must maintain case temperature ≤ 85 °C for sustained 14 A operation.

Does STW16NK60Z require external gate protection?

No. It integrates back-to-back gate-source Zener diodes with 30 V breakdown voltage (BVGSO), providing inherent ESD protection (6 kV HBM) and clamping of gate transients. External TVS devices are unnecessary unless system-level surge requirements exceed 6 kV.

Can STW16NK60Z be used in synchronous rectification?

No. As a standard N-channel high-voltage MOSFET with non-optimized body diode characteristics (t_rr = 490 ns, Q_rr = 5.4 nC), it is unsuitable for synchronous rectifier roles where low Q_rr and fast soft-recovery diodes are mandatory. Use dedicated SR controllers with logic-level FETs instead.

How does STW16NK60Z compare to STP16NK60Z in thermal performance?

STW16NK60Z in TO-247 has R_thj-case = 0.66 °C/W versus STP16NK60Z's TO-220 value of 0.66 °C/W-identical junction-to-case resistance-but TO-247's larger tab area and mounting flexibility yield lower effective R_thj-amb in real heatsink assemblies, enabling ~25% higher continuous power in constrained airflow environments.

STW16NK60Z Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 420mOhm @ 7A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 86 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2650 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 190W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW16NK60Z FAQ

1.How can I place an order for STW16NK60Z through Aetrix?

Please submit a Request for Quotation (RFQ) for STW16NK60Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW16NK60Z reliable?

The price and inventory of STW16NK60Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW16NK60Z is usually 5 days.

3.What payment methods are accepted for STW16NK60Z?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW16NK60Z transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW16NK60Z?

STW16NK60Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW16NK60Z order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW16NK60Z?

For technical support, including STW16NK60Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW16NK60Z requirements.

6.How does Aetrix verify that STW16NK60Z is sourced from the original manufacturer or authorized distributors?

All STW16NK60Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW16NK60Z meets industry standards.

7.What is the process for return or replacement of STW16NK60Z?

All STW16NK60Z units undergo pre-shipment inspection (PSI). If there is an issue with STW16NK60Z, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW16NK60Z part is unused and in its original packaging.

Return procedure for STW16NK60Z:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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