STMicroelectronics STW16NM50N

Overview

STW16NM50N from STMicroelectronics is an N-channel 500 V, 0.21 Ω (typ), 15 A MDmesh™ II Power MOSFET in TO-247 package, designed for high-efficiency switching converters requiring low conduction loss and fast switching. It features 100% avalanche tested ruggedness, low gate charge (38 nC), and low input capacitance (1200 pF), enabling use in industrial SMPS, PFC stages, and solar inverters.

For engineers reviewing the STW16NM50N datasheet, STW16NM50N pinout, STW16NM50N application, or STW16NM50N equivalent, key selection criteria include R_DS(on) at 10 V drive, unclamped inductive switching capability (E_AS = 470 mJ), dv/dt immunity (30 V/ns), and thermal resistance (R_thj-case = 1 °C/W) in TO-247 mounting.

Technical Context

This device implements ST's second-generation MDmesh™ vertical superjunction architecture with strip layout, delivering industry-leading R_DS(on) × Q_g figure-of-merit for 500 V MOSFETs. Its optimized cell structure reduces both on-resistance and gate charge without compromising avalanche robustness.

The TO-247 package provides low thermal resistance (1 °C/W junction-to-case), supports high-current operation up to 15 A continuous at T_C = 25°C, and enables reliable mounting to heatsinks for high-power switching applications where thermal management is critical.

Key Specifications

Pinout & Package

STW16NM50N uses a 3-pin TO-247 package with isolated tab (drain-connected). The package offers mechanical robustness, low thermal resistance, and compatibility with standard TO-247 heatsink clamps and insulating pads.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STW20NM50ND and IPP60R099C7, STW16NM50N delivers optimal balance of ruggedness, gate drive simplicity, and thermal performance for 100–200 kHz industrial SMPS-offering lower Q_g than CoolMOS alternatives and better cost-efficiency than higher-rated MDmesh variants.

Availability

STW16NM50N is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, solar inverters, and uninterruptible power supplies requiring stable component supply and long-term manufacturability.

Supply support for STW16NM50N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs and discrete power devices for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching power conversion in industrial and renewable energy systems.

FAQ

What is the maximum continuous drain current for STW16NM50N at 100°C case temperature?

The maximum continuous drain current is 9.4 A at T_C = 100°C, as specified in Table 2 of the official datasheet. This derating reflects thermal limits under sustained high-temperature operation and must be applied in heatsink-limited environments such as enclosed power enclosures or high-ambient industrial settings.

Does STW16NM50N require a negative gate voltage for reliable turn-off?

No. STW16NM50N has a gate threshold voltage (V_GS(th)) of 2–4 V and is fully enhanced at V_GS = 10 V. A gate drive of 0 V is sufficient for turn-off; applying –5 V is unnecessary and not recommended, as the absolute maximum V_GS rating is ±25 V but no benefit is gained from negative bias in standard hard-switched applications.

Can STW16NM50N replace STP16NM50N in an existing TO-220-based design?

No-STW16NM50N uses TO-247 packaging with different pin spacing, thermal interface, and mechanical mounting. While electrically identical, direct substitution requires PCB redesign, heatsink retooling, and validation of thermal performance due to differing R_thj-case (1 °C/W vs. 4.2 °C/W for TO-220). Electrical compatibility does not imply mechanical drop-in replacement.

Is the body diode of STW16NM50N suitable for synchronous rectification?

Yes-the source-drain diode exhibits t_rr = 400 ns and Q_rr = 5 µC at 25°C, with soft recovery characteristics confirmed in Figure 23 of the datasheet. However, its V_SD = 1.3 V forward drop is higher than Schottky diodes, so it is best suited for moderate-frequency (<200 kHz) synchronous rectification where conduction loss is secondary to gate drive complexity.