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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW18N60DM2

Name: STW18N60DM2
Brand: STMicroelectronics
SKU: STW18N60DM2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW18N60DM2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW18N60DM2.pdf

Description:: MOSFET N-CH 600V 12A TO247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STW18N60DM2 from STMicroelectronics is a high-voltage N-channel MDmesh™ DM2 Power MOSFET in TO-247 package, rated for 600 V V_DS, 0.260 Ω typ. R_DS(on), and 12 A continuous drain current at 25 °C. It integrates a fast-recovery body diode with 125 ns trr (T_j = 25 °C) and is 100% avalanche tested for ruggedness in ZVS phase-shift and bridge converters.

For engineers reviewing the STW18N60DM2 datasheet, STW18N60DM2 pinout, STW18N60DM2 application, or STW18N60DM2 equivalent, key selection criteria include its 40 V/ns diode recovery dv/dt rating, 20 nC total gate charge, low 800 pF C_iss, 1.39 °C/W R_thj-case, and Zener-protected gate.

Technical Context

This MOSFET employs ST's MDmesh™ DM2 silicon technology optimized for high-efficiency hard-switching and resonant topologies. Its design emphasizes low Q_rr (680 nC typ.) and fast trr (125 ns), enabling reduced switching losses in PFC and LLC stages.

The device features extremely low input capacitance (C_iss = 800 pF) and gate charge (Q_g = 20 nC), supporting high-frequency operation up to 300 kHz while maintaining robust dv/dt immunity (50 V/ns MOSFET ruggedness, 40 V/ns diode recovery).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports primary-side switching in 400 V DC bus and universal AC-input offline SMPS
R_DS(on) max	0.295 Ω - limits conduction loss to ≤ 42.7 W at 12 A, enabling compact heatsink design
Q_g	20 nC - reduces gate drive power requirement and enables use with low-power drivers (e.g., 1–2 W typical)
trr	125 ns (T_j = 25 °C) - minimizes commutation loss and EMI in bridge-leg transitions
dv/dt ruggedness	50 V/ns - ensures reliable operation under fast voltage transients in half/full-bridge configurations
R_thj-case	1.39 °C/W - allows 90 W dissipation at ≤ 125 °C case temperature, supporting high-power density layouts
Q_rr	680 nC (T_j = 25 °C) - lowers reverse recovery energy loss versus standard superjunction MOSFETs

Pinout & Package

Supplied in TO-247 package (standard 3-pin through-hole), with isolated tab (drain-connected). Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate terminal	Controls channel conduction; requires ≤ ±25 V drive; low 5.6 Ω intrinsic gate resistance aids high-speed switching
Pin 2 (D)	Drain terminal / heat sink interface	High-voltage output node; electrically connected to metal tab; must be insulated from heatsink unless referenced to same potential
Pin 3 (S)	Source terminal / reference node	Power return path; defines local ground for gate drive; low-inductance layout critical for dv/dt stability

Key Features

Feature	Design Value
Fast-recovery body diode	trr = 125 ns and Qrr = 680 nC enable efficient synchronous rectification replacement in flyback and LLC without external diode
Low gate charge	Qg = 20 nC reduces driver stress and gate loop EMI, supporting >200 kHz operation with minimal overshoot
Zener-protected gate	Integrated gate oxide protection withstands ±25 V transient overvoltage, eliminating need for external gate clamp zeners
100% avalanche tested	Rated for 380 mJ single-pulse avalanche energy (E_AR) - ensures reliability under unclamped inductive switching faults
High dv/dt ruggedness	50 V/ns MOSFET and 40 V/ns diode recovery ratings prevent spurious turn-on in high-noise bridge environments

Applications

Industrial Motor Drives

Server & Telecom PSU

Use Scenario: Half-bridge IGBT replacement in 3 kW HVAC inverter drives operating at 16 kHz PWM frequency.

IC Role / Device Role / Timing Role: High-side/low-side switching element handling 600 V DC bus and 12 A motor phase current.

Use Value: Low Qrr and fast trr reduce commutation loss by ~35% vs legacy superjunction MOSFETs, lowering heatsink size by 40%.

Use Scenario: Primary-side switch in 1.5 kW server CRPS (Common Redundant Power Supply) with active clamp forward topology.

IC Role / Device Role / Timing Role: Main power switch synchronized to 250 kHz controller with zero-voltage switching assist.

Use Value: 20 nC Qg and 800 pF Ciss allow clean 250 kHz switching with <1.2 W gate drive loss and <5 ns propagation skew.

EV Onboard Charger (OBC)

Industrial UPS Systems

Use Scenario: Switching element in dual-phase interleaved PFC stage of 6.6 kW OBC, operating at 65 kHz with 400 V DC link.

IC Role / Device Role / Timing Role: Fast-recovery diode-enabled boost switch eliminating need for discrete anti-parallel SiC diodes.

Use Value: 125 ns trr and 680 nC Qrr cut diode conduction loss by 2.1 W per phase versus standard 600 V MOSFETs.

Use Scenario: Inverter leg switch in 10 kVA three-phase UPS delivering sine-wave output with <1% THD.

IC Role / Device Role / Timing Role: Hard-switched 600 V, 12 A output stage device with 150 °C T_jmax and 1.39 °C/W thermal resistance.

Use Value: 90 W P_TOT and robust avalanche rating support 120% overload for 10 s without derating or thermal shutdown.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW20N65M5	650 V rating, 0.230 Ω R_DS(on), 22 nC Q_g, TO-247 package	Higher voltage margin but higher gate charge increases driver loss at >200 kHz	Prefer when 650 V derating is required; avoid in high-frequency ZVS where Q_g dominates loss
IPP60R099C7	600 V, 0.099 Ω R_DS(on), 42 nC Q_g, 150 °C T_jmax, TO-247	Lower R_DS(on) but double Q_g and no integrated fast diode - requires external SiC diode	Select only for low-frequency, high-current applications where conduction loss dominates; not suitable for ZVS or PFC diode-replacement

Compared with STW20N65M5 and IPP60R099C7, STW18N60DM2 uniquely balances low Q_g, fast trr, and integrated diode - making it optimal for medium-frequency, high-efficiency bridge and PFC designs where both switching and recovery losses matter.

Availability

STW18N60DM2 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, EV onboard chargers, and UPS systems requiring stable component supply and long-term manufacturability.

Supply support for STW18N60DM2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing products for automotive, industrial, power, and digital consumer markets.

The MDmesh™ DM2 series targets high-efficiency, high-voltage power conversion - specifically engineered for reduced Q_rr, enhanced dv/dt immunity, and ZVS compatibility in telecom, server, and renewable energy systems.

FAQ

What is the maximum safe operating junction temperature for STW18N60DM2?

The absolute maximum junction temperature is 150 °C, as specified in Table 2 of the datasheet. Continuous operation above this limit risks permanent degradation of the silicon die and gate oxide integrity. Thermal design must ensure T_j remains ≤150 °C under worst-case load, ambient, and airflow conditions using the 1.39 °C/W R_thj-case value.

Does STW18N60DM2 require an external gate resistor for stability?

Yes - a gate resistor (typically 4.7 Ω to 10 Ω) is required to dampen ringing and control dV/dt during switching transitions. The datasheet's Figure 13 and Figure 18 confirm RG = 4.7 Ω as the test condition for timing measurements, and omitting it risks oscillation due to the device's low 5.6 Ω intrinsic gate resistance and high dv/dt capability.

Can STW18N60DM2 replace a 600 V IGBT in a 10 kHz inverter?

Yes - its 12 A continuous rating, 90 W power dissipation, and 100% avalanche-tested ruggedness support direct IGBT replacement in 10 kHz motor drives. However, gate drive voltage must be adjusted to 10 V (not 15 V), and layout must minimize source inductance to preserve its 50 V/ns dv/dt performance and prevent false turn-on.

Is the body diode suitable for continuous freewheeling in a synchronous buck converter?

No - while the body diode has fast recovery (125 ns trr), its forward voltage is 1.6 V at 12 A, resulting in significantly higher conduction loss than a Schottky or SiC diode. It is intended for clamping and transient recovery, not sustained freewheeling; synchronous rectification with external FETs is strongly recommended for efficiency-critical buck stages.

STW18N60DM2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ DM2

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 295mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 800 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 90W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW18N60DM2 FAQ

1.How can I place an order for STW18N60DM2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STW18N60DM2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW18N60DM2 reliable?

The price and inventory of STW18N60DM2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW18N60DM2 is usually 5 days.

3.What payment methods are accepted for STW18N60DM2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW18N60DM2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW18N60DM2?

STW18N60DM2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW18N60DM2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW18N60DM2?

For technical support, including STW18N60DM2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW18N60DM2 requirements.

6.How does Aetrix verify that STW18N60DM2 is sourced from the original manufacturer or authorized distributors?

All STW18N60DM2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW18N60DM2 meets industry standards.

7.What is the process for return or replacement of STW18N60DM2?

All STW18N60DM2 units undergo pre-shipment inspection (PSI). If there is an issue with STW18N60DM2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW18N60DM2 part is unused and in its original packaging.

Return procedure for STW18N60DM2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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