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STMicroelectronics STW18N60M2

Name: STW18N60M2
Brand: STMicroelectronics
SKU: STW18N60M2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW18N60M2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW18N60M2.pdf

Description:: MOSFET N-CH 600V 13A TO247

Quantity:: RFQ Add To RFQ list

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Inventory:417

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Product details

Overview

STW18N60M2 from STMicroelectronics is an N-channel 600 V, 255 mΩ typ. (280 mΩ max.), 13 A MDmesh™ M2 Power MOSFET in TO-220 package, optimized for high-efficiency LLC resonant converters and hard-switched SMPS. It features 21.5 nC total gate charge, 40 pF output capacitance, and 100% avalanche-tested ruggedness.

For engineers reviewing the STW18N60M2 datasheet, STW18N60M2 pinout, STW18N60M2 application, or STW18N60M2 equivalent, key selection criteria include its low Coss profile, Zener-protected gate, 15 V/ns diode recovery dv/dt rating, and proven performance in 300–480 V bus industrial power supplies.

Technical Context

This device employs ST's MDmesh M2 strip layout and enhanced vertical structure to simultaneously reduce R_DS(on) and optimize switching loss trade-offs. Its 164.5 pF equivalent output capacitance (C_oss,eq) enables predictable energy storage during turn-off transitions in resonant topologies.

The integrated Zener-protected gate withstands ±25 V transient stress, while its 135 mJ single-pulse avalanche energy (E_AS) and 3 A repetitive avalanche current (I_AR) support unclamped inductive switching robustness without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Supports 400 V AC input rectified systems with 50% safety margin for surge transients.
R_DS(on) max	280 mΩ at V_GS = 10 V, I_D = 6.5 A - Enables <1.8 W conduction loss at 13 A continuous drain current.
Q_g	21.5 nC - Reduces gate drive power and allows use of lower-cost, lower-current gate drivers.
C_oss	40 pF - Low output capacitance minimizes turn-on switching loss in zero-voltage switching (ZVS) circuits.
E_AS	135 mJ - Confirmed avalanche energy supports reliable operation under short-circuit or overload conditions.
T_J max	150 °C - Enables high-power density designs with thermal derating up to 100 °C case temperature.
R_thJC	1.14 °C/W - Allows direct heatsink mounting for efficient junction-to-case heat transfer in TO-220 packages.

Pinout & Package

TO-220 package with isolated tab (Drain-connected). Standard 3-pin through-hole outline with center tab for mechanical mounting and thermal conduction.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal; requires ≤±25 V drive; Zener-clamped internally for ESD and overvoltage protection.
Pin 2 (TAB/D)	Drain (exposed tab)	Main high-side power terminal; electrically connected to metal tab; must be insulated from heatsink unless referenced to same potential.
Pin 3 (S)	Source	Power return path and gate reference; forms common node with driver ground in low-side configurations.

Key Features

Feature	Design Value
Extremely low gate charge	21.5 nC total gate charge reduces driver IC power consumption and simplifies gate loop layout.
Optimized C_oss profile	40 pF typical C_oss and 164.5 pF C_oss,eq enable precise ZVS timing control in LLC half-bridge stages.
100% avalanche tested	Each unit validated for 135 mJ single-pulse avalanche energy, ensuring reliability in unclamped inductive switching.
Zener-protected gate	Integrated gate-source Zener clamps transients to ±25 V, eliminating need for external gate protection components.

Applications

Industrial Switch-Mode Power Supplies

LLC Resonant DC-DC Converters

Use Scenario: 1 kW telecom rectifier with universal AC input (90–264 VAC) and 48 V/20 A output.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch in asymmetric half-bridge topology operating at 100–300 kHz.

Use Value: Low C_oss and 21.5 nC Q_g minimize combined conduction and switching losses, achieving >95% peak efficiency.

Use Scenario: Server PSU main converter delivering 12 V/120 A with digital control and adaptive frequency modulation.

IC Role / Device Role / Timing Role: High-side switch in LLC half-bridge; synchronized with resonant tank zero-current switching.

Use Value: Predictable C_oss,eq (164.5 pF) ensures stable ZVS boundary across load and line variations.

Motor Drive Inverters

High-Voltage DC Fast Chargers

Use Scenario: 7.4 kW on-board EV charger with dual-phase interleaved PFC + LLC stage.

IC Role / Device Role / Timing Role: Boost switch in active PFC front-end handling 400–800 V DC link voltage.

Use Value: 600 V V_DS rating and 50 V/ns MOSFET dv/dt ruggedness prevent false turn-on during fast voltage transients.

Use Scenario: 150 kW ultra-fast charging station using modular Si-based 3-level NPC inverters.

IC Role / Device Role / Timing Role: Upper-leg switch in three-level neutral-point-clamped (NPC) inverter leg.

Use Value: Avalanche-rated construction tolerates bus overvoltage events during regenerative braking or grid fault conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP18N60M2	Identical die, TO-220 package, same electrical specs; differs only in marking and packaging (tube vs. tape/reel).	Same functional use; preferred for prototyping and low-volume production due to tube availability.	Select when manual assembly or small-batch evaluation is required; identical thermal and electrical behavior.
STI18N60M2	I²PAK (TO-262) package; same R_DS(on), Q_g, and V_DS; R_thJC = 1.25 °C/W (vs. 1.14 °C/W).	Better suited for automated SMT lines; slightly higher thermal resistance limits peak power in compact layouts.	Choose for volume surface-mount production where board space and assembly automation outweigh marginal thermal penalty.

Compared with STP18N60M2 and STI18N60M2, STW18N60M2 offers identical silicon performance in a TO-220 variant optimized for through-hole prototyping and medium-volume industrial power modules requiring mechanical robustness and field-serviceability.

Availability

STW18N60M2 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, LLC resonant converters, motor drive inverters, and high-voltage DC fast chargers requiring stable component supply and long-term manufacturing continuity.

Supply support for STW18N60M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STW18N60M2 belongs to the MDmesh™ M2 high-voltage MOSFET product line, engineered specifically for high-efficiency, high-frequency power conversion in 400–800 V DC-link applications.

FAQ

Is STW18N60M2 pin-compatible with STP18N60M2?

Yes - both share identical TO-220 package outline, pin assignment (G-D-S), and thermal/mechanical footprint. The only differences are part marking and packaging format (tube for STW18N60M2, tube for STP18N60M2); no PCB redesign is needed for substitution.

What is the maximum recommended gate resistor value for hard-switching applications?

For 100–300 kHz hard-switching at 13 A, a 4.7 Ω gate resistor is validated per datasheet test circuit (Figure 13); values above 10 Ω increase switching time and losses, while values below 2.2 Ω risk gate oscillation without proper layout control.

Does STW18N60M2 include an integrated body diode, and what are its recovery characteristics?

Yes - it integrates a fast-recovery body diode with 305 ns reverse recovery time (T_J = 25 °C) and 3.3 µC reverse recovery charge; diode is rated for 13 A continuous and 52 A pulsed source-drain current per Table 7.

Can STW18N60M2 be used in synchronous rectification topologies?

No - it is an N-channel high-side switch designed for primary-side switching; its body diode forward voltage (1.6 V at 13 A) and recovery behavior are not optimized for secondary-side synchronous rectification, where low V_F and ultrafast trr are critical.

STW18N60M2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II Plus

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 280mOhm @ 6.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 21.5 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 791 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW18N60M2 FAQ

1.How can I place an order for STW18N60M2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STW18N60M2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW18N60M2 reliable?

The price and inventory of STW18N60M2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW18N60M2 is usually 5 days.

3.What payment methods are accepted for STW18N60M2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW18N60M2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW18N60M2?

STW18N60M2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW18N60M2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW18N60M2?

For technical support, including STW18N60M2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW18N60M2 requirements.

6.How does Aetrix verify that STW18N60M2 is sourced from the original manufacturer or authorized distributors?

All STW18N60M2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW18N60M2 meets industry standards.

7.What is the process for return or replacement of STW18N60M2?

All STW18N60M2 units undergo pre-shipment inspection (PSI). If there is an issue with STW18N60M2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW18N60M2 part is unused and in its original packaging.

Return procedure for STW18N60M2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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