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STMicroelectronics STW18N65M5

Name: STW18N65M5
Brand: STMicroelectronics
SKU: STW18N65M5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW18N65M5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW18N65M5.pdf

Description:: MOSFET N-CH 650V 15A TO247

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Product details

Overview

STW18N65M5 from STMicroelectronics is an N-channel 650 V, 198 mΩ typ. (220 mΩ max), 15 A Power MOSFET based on MDmesh M5 vertical process technology in TO-247 package. It delivers high dv/dt capability (15 V/ns), 100% avalanche tested ruggedness (EAS = 210 mJ), and low gate charge (Qg = 31 nC), making it suitable for high-efficiency PFC and SMPS primary-side switching.

For engineers reviewing the STW18N65M5 datasheet, STW18N65M5 pinout, STW18N65M5 application, or STW18N65M5 equivalent, key selection criteria include RDS(on) at 10 V drive, unclamped inductive switching robustness, diode reverse recovery performance (Qrr = 3.4 µC), and thermal resistance (RthJC = 1.14 °C/W) in high-power industrial converters.

Technical Context

This device implements a high-voltage silicon power MOSFET architecture optimized for hard-switched and resonant topologies. Its MDmesh M5 process achieves ultra-low specific on-resistance (RDS(on) × area) while maintaining 650 V breakdown voltage and enhanced dv/dt immunity-critical for minimizing EMI in fast-switching bridge legs.

The integrated body diode exhibits controlled reverse recovery (trr = 290 ns, Qrr = 3.4 µC at TC = 25 °C), enabling reliable operation with SiC or fast recovery diodes in totem-pole PFC. Gate threshold voltage (VGS(th) = 3–5 V) ensures stable turn-on under wide temperature range (−55 to 150 °C).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - supports 400 V DC bus designs with ≥50 % voltage margin for surge and ringing.
R_DS(on) max	220 mΩ @ V_GS = 10 V, I_D = 7.5 A - enables <1.7 W conduction loss at 15 A continuous drain current.
I_D cont @ T_C = 100 °C	9.4 A - defines usable current derating in thermally constrained heatsink environments.
E_AS	210 mJ @ T_J = 25 °C - quantifies single-pulse avalanche energy handling without failure.
Q_g	31 nC - determines gate driver power requirement and switching speed control in 65–100 kHz SMPS.
dv/dt rating	15 V/ns - ensures immunity to parasitic turn-on during high-slew-rate commutation events.
R_thJC	1.14 °C/W - sets junction-to-case thermal drop; enables 110 W dissipation at ΔT = 125 °C.

Pinout & Package

STW18N65M5 is housed in a TO-247 package with isolated tab (drain-connected). The case is electrically active and must be insulated from heatsink unless referenced to system ground potential.

Pin/Terminal	Circuit Role	Design Meaning
1 (Lead)	Gate (G)	High-impedance control input; requires ≤±25 V drive; 3 Ω intrinsic gate resistance affects Miller plateau timing.
2 (Tab)	Drain (D)	Main high-side power terminal; connected to TO-247 metal tab; requires isolation or grounding per layout.
3 (Lead)	Source (S)	Power return path and gate reference; forms common node with driver ground in half-bridge configurations.

Key Features

Feature	Design Value
MDmesh M5 process technology	Delivers 198 mΩ typ. R_DS(on) at 650 V - reduces conduction loss by ~25 % vs. prior-generation 650 V MOSFETs.
100 % avalanche tested	Guarantees E_AS ≥ 210 mJ - eliminates need for external snubbers in inductive load switching.
Low Q_gd/Q_gs ratio	14 nC / 8 nC = 1.75 - improves hard-switching immunity and reduces Miller-induced false turn-on risk.
Enhanced dv/dt capability	15 V/ns - sustains reliable operation in high-frequency LLC and phase-shifted full-bridge converters.

Applications

Industrial Switch-Mode Power Supplies

Server & Telecom Rectifiers

Use Scenario: Primary-side switch in 1–3 kW fixed-frequency flyback or forward converters with 380–400 V DC input.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer into transformer primary winding during PWM on-time.

Use Value: 220 mΩ R_DS(on) limits conduction loss to <2.5 W at 12 A, improving full-load efficiency beyond 92 %.

Use Scenario: Active clamp or synchronous rectifier driver in 48 V intermediate bus converters for data center PSUs.

IC Role / Device Role / Timing Role: High-side switch in active clamp forward topology managing reset flux and clamping voltage spikes.

Use Value: 15 V/ns dv/dt rating prevents spurious turn-on during clamp capacitor discharge transients.

Three-Phase Motor Drives

Renewable Energy Inverters

Use Scenario: Upper-leg IGBT/MOSFET replacement in 7.5 kW HVAC inverter output stage operating at 8 kHz carrier frequency.

IC Role / Device Role / Timing Role: High-side power switch in three-phase bridge leg, driven by isolated gate driver with negative turn-off bias.

Use Value: 210 mJ E_AS withstands motor phase short-circuit events without latch-up or parametric shift.

Use Scenario: DC-link switch in string-level solar microinverters handling 600 V PV input with rapid MPPT transients.

IC Role / Device Role / Timing Role: Unidirectional power switch in bidirectional DC-DC stage interfacing PV array to battery storage.

Use Value: Low Q_rr (3.4 µC) and soft-recovery diode reduce switching losses by 18 % vs. standard 650 V MOSFETs in discontinuous conduction mode.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R041CFD7	650 V, 41 mΩ, TO-247 - lower R_DS(on) but higher Q_g (67 nC) and no avalanche rating.	Better conduction loss at high current; unsuitable for unclamped inductive loads without external protection.	Select when thermal budget allows lower R_DS(on) and circuit includes active overvoltage clamping.
IXTH16N65X2	650 V, 180 mΩ, TO-247 - similar R_DS(on), higher Q_g (42 nC), rated for 100 % UIS but E_AS not specified.	Higher gate drive power required; less predictable avalanche behavior in repetitive stress conditions.	Prefer for cost-sensitive industrial drives where single-event ruggedness is secondary to BOM cost.

Compared with IPW65R041CFD7 and IXTH16N65X2, STW18N65M5 offers verified 210 mJ single-pulse avalanche energy and balanced Q_g/R_DS(on) trade-off-making it optimal for cost-constrained, reliability-critical PFC and offline SMPS where field failure modes must be eliminated.

Availability

STW18N65M5 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, server rectifiers, three-phase motor drives, and renewable energy inverters requiring stable component supply across multi-year production cycles.

Supply support for STW18N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs and discrete power devices for industrial, automotive, and consumer markets.

STW18N65M5 belongs to the MDmesh M5 high-voltage MOSFET product line, engineered specifically for high-efficiency, high-reliability AC-DC and DC-DC conversion in industrial and telecom infrastructure.

FAQ

What is the maximum safe operating junction temperature for STW18N65M5?

The absolute maximum junction temperature (T_J) is 150 °C, as defined in Table 1 of DS8927 Rev 4. Operation above this limit risks permanent parametric degradation or thermal runaway. Derating curves in Figure 2 confirm sustained operation up to 150 °C with appropriate heatsinking and airflow.

Does STW18N65M5 have an integrated body diode, and what are its key recovery parameters?

Yes, it features a monolithic source-drain body diode characterized with trr = 290 ns, Qrr = 3.4 µC, and IRRM = 23.5 A at TJ = 25 °C (Table 7). These values are measured under standardized inductive switching conditions (di/dt = 100 A/µs, VDD = 100 V), enabling accurate loss modeling in bridge configurations.

Is STW18N65M5 RoHS-compliant and halogen-free?

Yes, STW18N65M5 is manufactured in ST's ECOPACK2-compliant TO-247 package, meeting RoHS Directive 2011/65/EU and JEDEC JS709B halogen-free requirements. Full compliance documentation is available via ST's Quality & Reliability portal using order code STW18N65M5.

Can STW18N65M5 replace STP18N65M5 in existing designs?

Yes, STW18N65M5 is a direct functional and pinout-compatible upgrade to STP18N65M5, sharing identical electrical specs and marking (18N65M5), but in TO-247 instead of TO-220. Thermal performance improves due to lower R_thJC (1.14 vs. 1.14 °C/W same value, but TO-247 offers better mechanical stability and higher power handling).

STW18N65M5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ V

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 220mOhm @ 7.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 31 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1240 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW18N65M5 FAQ

1.How can I place an order for STW18N65M5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STW18N65M5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW18N65M5 reliable?

The price and inventory of STW18N65M5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW18N65M5 is usually 5 days.

3.What payment methods are accepted for STW18N65M5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW18N65M5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW18N65M5?

STW18N65M5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW18N65M5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW18N65M5?

For technical support, including STW18N65M5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW18N65M5 requirements.

6.How does Aetrix verify that STW18N65M5 is sourced from the original manufacturer or authorized distributors?

All STW18N65M5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW18N65M5 meets industry standards.

7.What is the process for return or replacement of STW18N65M5?

All STW18N65M5 units undergo pre-shipment inspection (PSI). If there is an issue with STW18N65M5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW18N65M5 part is unused and in its original packaging.

Return procedure for STW18N65M5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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