STMicroelectronics STW18NM60N

Overview

STW18NM60N from STMicroelectronics is an N-channel 600 V, 13 A Power MOSFET using MDmesh™ II technology in TO-247 package, featuring 260 mΩ typical R_DS(on), 35 nC total gate charge, and 1000 pF input capacitance. It delivers high-efficiency switching in offline SMPS, PFC stages, and industrial motor drives where low conduction and switching losses are critical.

For engineers reviewing the STW18NM60N datasheet, STW18NM60N pinout, STW18NM60N application, or STW18NM60N equivalent, this device is evaluated for high-voltage hard-switched converters requiring robust avalanche capability (350 mJ E_AS), fast diode recovery (300 ns t_rr), and thermal reliability (R_thJC = 1.14 °C/W).

Technical Context

This MOSFET employs ST's second-generation MDmesh vertical strip architecture to minimize both R_DS(on) and gate charge simultaneously-enabling high power density in 600 V applications. Its optimized cell layout reduces output capacitance (C_oss = 60 pF) and reverse transfer capacitance (C_rss = 3 pF), improving voltage transient immunity and reducing Miller-induced turn-on risk.

The integrated body diode supports synchronous rectification and flyback operation with 1.6 V forward voltage at 13 A and controlled reverse recovery (Q_rr = 4.0 µC, I_RRM = 25 A). The device is 100% avalanche tested per unclamped inductive load conditions, ensuring ruggedness in real-world overvoltage events.

Key Specifications

Pinout & Package

STW18NM60N is housed in a TO-247 package with isolated tab (pin 2), enabling direct heatsink mounting without electrical isolation hardware. The package provides low thermal resistance (R_thJC = 1.14 °C/W) and high power dissipation capability (P_TOT = 110 W at T_C = 25 °C).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 600 V Power MOSFET applications.

Compared with STP18NM60N and IPP60R190C7, STW18NM60N uniquely balances high-current capability (13 A), low thermal resistance (1.14 °C/W), and full avalanche rating-making it optimal for high-reliability, medium-to-high-power 600 V switching where thermal headroom and fault robustness are non-negotiable.

Availability

STW18NM60N is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply across multi-year production cycles.

Supply support for STW18NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STW18NM60N belongs to the MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-voltage AC-DC conversion in industrial and computing power systems where low R_DS(on), low Q_g, and ruggedness are mandatory.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The maximum continuous drain current (I_D) for STW18NM60N at T_C = 100 °C is 8.2 A, as specified in Table 1 of DS6338 Rev 5. This rating is limited by junction temperature (T_J ≤ 150 °C) and reflects thermal derating from the 13 A rating at 25 °C case temperature.

Does STW18NM60N have an isolated drain tab?

Yes, the TO-247 package used for STW18NM60N features an electrically isolated drain tab (pin 2), allowing direct mechanical attachment to a heatsink without requiring insulating pads or washers-reducing thermal interface resistance and simplifying thermal design.

What is the typical reverse recovery charge (Q_rr) of the body diode?

The typical reverse recovery charge (Q_rr) of the integrated body diode is 4.0 µC under test conditions of I_SD = 13 A, di/dt = 100 A/µs, and V_DD = 60 V at T_J = 25 °C, as stated in Table 7 of the datasheet. At 150 °C, Q_rr increases to 4.5 µC.

Can STW18NM60N be used in zero-voltage switching (ZVS) circuits?

Yes-its low C_oss (60 pF) and C_rss (3 pF), combined with 35 nC Q_g, support efficient ZVS operation in resonant LLC and phase-shifted full-bridge topologies. The device's fast diode (t_rr = 300 ns) and soft recovery characteristics further enhance ZVS reliability at 100–300 kHz.