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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW18NM80

Name: STW18NM80
Brand: STMicroelectronics
SKU: STW18NM80
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW18NM80

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW18NM80.pdf

Description:: MOSFET N-CH 800V 17A TO247-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STW18NM80 from STMicroelectronics is an N-channel 800 V, 250 mΩ typ. (295 mΩ max), 17 A MDmesh™ Power MOSFET in TO-247 package, engineered for high-voltage switching in offline SMPS, PFC stages, and industrial motor drives. It delivers low gate charge (70 nC), high dv/dt immunity, and 100% tested avalanche ruggedness up to 600 mJ.

For engineers reviewing the STW18NM80 datasheet, STW18NM80 pinout, STW18NM80 application, or STW18NM80 equivalent, key selection criteria include its 800 V V_DS, 295 mΩ R_DS(on) at 10 V_GS, 70 nC total gate charge, 2.5 kV isolation rating, and TO-247 thermal performance with R_thJC = 0.66 °C/W.

Technical Context

This device leverages ST's MDmesh™ technology-combining multi-drain process and PowerMESH™ horizontal layout-to achieve ultra-low on-resistance while maintaining high voltage capability and fast switching. Its 2070 pF input capacitance and 29 pF reverse transfer capacitance support efficient hard-switching topologies.

The integrated body diode features 618 ns reverse recovery time (T_J = 25 °C) and 9.6 µC Q_rr, enabling robust operation in inductive load circuits. The 0.66 °C/W junction-to-case thermal resistance enables high-power dissipation when mounted on heatsinks.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - Supports primary-side switching in universal-input AC-DC converters up to 400 V_AC mains with margin.
R_DS(on) max	295 mΩ @ V_GS = 10 V, I_D = 8.5 A - Enables <1.5 W conduction loss at 10 A continuous drain current.
Q_g	70 nC - Reduces gate drive power and enables use with standard 1–2 A peak gate drivers in 100–300 kHz designs.
E_AS	600 mJ - Confirmed single-pulse avalanche energy ensures reliability during transient overvoltage events without external snubbers.
R_thJC	0.66 °C/W - Allows 190 W total power dissipation at T_C = 25 °C, supporting high-current operation with active heatsinking.
V_ISO	2.5 kV RMS - Provides reinforced insulation between leads and heatsink, meeting IEC/EN 60747-5-2 requirements for Class X/Y safety-critical applications.
I_D (cont)	17 A @ T_C = 25 °C - Rated for continuous operation in high-power PFC boost stages and half-bridge inverters.

Pinout & Package

STW18NM80 is housed in a TO-247 package with isolated tab (drain-connected). The case is electrically connected to the drain terminal, requiring insulated mounting hardware when referenced to non-drain potentials.

Pin/Terminal	Circuit Role	Design Meaning
1 (Lead)	Gate (G)	High-impedance control input; requires ≤±30 V bias; 4 Ω gate input resistance minimizes oscillation risk.
2 (Lead)	Drain (D)	Main high-voltage power path; electrically tied to metal tab; must be isolated from heatsink unless system ground reference permits.
3 (Lead)	Source (S)	Power return node; forms common reference for gate drive; carries full load current and diode recovery current.

Key Features

Feature	Design Value
MDmesh™ technology	Enables 800 V rating with 250 mΩ typical R_DS(on), reducing conduction loss by >30% vs. conventional planar MOSFETs at same voltage class.
Low C_iss/C_rss ratio	2070 pF / 29 pF = 71:1 - Improves Miller immunity and enables stable operation under high dv/dt conditions (>50 V/ns).
100% avalanche tested	Each unit validated for 600 mJ single-pulse E_AS - Eliminates need for design margining against unclamped inductive switching failures.
Fast body diode	t_rr = 618 ns, Q_rr = 9.6 µC - Minimizes commutation losses and EMI in bridge configurations without requiring external SiC/Schottky catch diodes.
ECOPACK® compliant	Meets RoHS and halogen-free requirements per ST's environmental grade definitions - suitable for industrial and consumer products with strict compliance mandates.

Applications

Industrial Motor Drives

Server & Telecom PSU

Use Scenario: Half-bridge inverter stage for 3-phase BLDC motor control in HVAC compressors and industrial pumps.

IC Role / Device Role / Timing Role: High-side and low-side switching element handling 10–15 A continuous phase current at 20–100 kHz PWM frequency.

Use Value: 0.66 °C/W R_thJC allows direct heatsink mounting for compact thermal design; 800 V rating supports 600 V DC bus with 33% safety margin.

Use Scenario: Active clamp forward or LLC resonant converter primary switch in 1–3 kW telecom rectifiers and server PSUs.

IC Role / Device Role / Timing Role: Main switching transistor operating at 200–500 kHz with hard-switched or soft-switched gate transitions.

Use Value: Low Q_g (70 nC) and C_iss (2070 pF) reduce driver losses and improve ZVS/ZCS initiation; 2.5 kV isolation supports reinforced insulation requirements.

Industrial PFC Boost Stage

EV Onboard Charger Input Stage

Use Scenario: Continuous conduction mode (CCM) boost PFC front-end in industrial UPS and welding equipment.

IC Role / Device Role / Timing Role: Unidirectional high-voltage switch conducting 12–17 A average current with 50–100 kHz switching.

Use Value: 295 mΩ R_DS(on) limits conduction loss to <2.5 W at 15 A, improving efficiency above 96% at full load; avalanche ruggedness handles line surges.

Use Scenario: Input rectification and isolation stage in bidirectional OBCs converting AC grid to 400–800 V DC battery bus.

IC Role / Device Role / Timing Role: Primary-side switch in dual-active-bridge (DAB) topology managing 3.3–22 kW power transfer.

Use Value: TO-247 package supports high-current PCB routing and thermal interface to liquid-cooled heatsinks; 100% avalanche test ensures reliability during regenerative braking transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP18NM80	Same die, TO-220 package; R_thJC = 3.13 °C/W; PTOT = 190 W only at T_C = 25 °C (derates rapidly above 60 °C).	Limited to lower-power (<1 kW) SMPS and fan controllers where heatsink space is constrained but thermal budget is relaxed.	Select when cost-sensitive, lower-volume, or space-constrained designs preclude TO-247 mounting; verify SOA at target ambient temperature.
IPP60R099C7	650 V CoolMOS™ C7; R_DS(on) = 99 mΩ; Q_g = 53 nC; no rated avalanche energy; TO-247 package.	Better suited for 400 V_AC input systems with tight efficiency targets; not rated for 800 V bus or unclamped inductive loads.	Choose for higher-efficiency 650 V designs where avalanche stress is absent; avoid in 800 V PFC or motor drive applications requiring ruggedness.

Compared with STP18NM80, STW18NM80 offers 4.7× lower thermal resistance and 2.5× higher power dissipation capability; versus IPP60R099C7, it trades lower R_DS(on) for guaranteed 800 V operation and 600 mJ avalanche survival-critical in industrial and grid-connected systems.

Availability

STW18NM80 is available at Aetrix Electronics and suitable for industrial motor drives, telecom power supplies, and EV onboard charger input stages requiring stable component supply across long production lifecycles.

Supply support for STW18NM80 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STW18NM80 belongs to the MDmesh™ high-voltage Power MOSFET product line, developed specifically for energy-efficient, rugged switching in offline AC-DC conversion, PFC, and motor control applications demanding 600–900 V breakdown capability.

FAQ

What is the maximum continuous drain current for STW18NM80 at 100 °C case temperature?

The maximum continuous drain current is 10.71 A at T_C = 100 °C, as specified in Table 1 of DS6113 Rev 6. This value is limited by junction temperature (T_J ≤ 150 °C) and reflects derating due to reduced thermal headroom; operation above this current requires active cooling or pulse-width reduction.

Does STW18NM80 require a negative gate voltage for reliable turn-off in high-noise environments?

No-STW18NM80 has a gate threshold voltage (V_GS(th)) of 3–5 V and is fully enhanced at V_GS = 10 V. While a small negative bias (e.g., –5 V) improves noise immunity, it is not required; the device remains reliably off with 0 V gate drive, and gate leakage (±100 nA) is negligible in standard gate driver circuits.

Can STW18NM80 be used in synchronous rectification configurations?

No-STW18NM80 is an N-channel enhancement-mode MOSFET optimized for high-side or low-side switching, not synchronous rectification. Its body diode recovery characteristics (t_rr = 618 ns, Q_rr = 9.6 µC) are unsuitable for high-frequency SR; dedicated low-V_F, fast-recovery SR MOSFETs (e.g., STP80NF55-08) are recommended instead.

Is the TO-247 package of STW18NM80 lead-free and RoHS-compliant?

Yes-STW18NM80 is manufactured in ST's ECOPACK®-compliant TO-247 package, meeting RoHS Directive 2011/65/EU and EU REACH Regulation (EC) No. 1907/2006. The device is halogen-free and uses matte tin plating on leads, verified per JEDEC J-STD-020 moisture sensitivity level (MSL) 1.

STW18NM80 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 295mOhm @ 8.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 70 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2070 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 190W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW18NM80 FAQ

1.How can I place an order for STW18NM80 through Aetrix?

Please submit a Request for Quotation (RFQ) for STW18NM80 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW18NM80 reliable?

The price and inventory of STW18NM80 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW18NM80 is usually 5 days.

3.What payment methods are accepted for STW18NM80?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW18NM80 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW18NM80?

STW18NM80 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW18NM80 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW18NM80?

For technical support, including STW18NM80 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW18NM80 requirements.

6.How does Aetrix verify that STW18NM80 is sourced from the original manufacturer or authorized distributors?

All STW18NM80 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW18NM80 meets industry standards.

7.What is the process for return or replacement of STW18NM80?

All STW18NM80 units undergo pre-shipment inspection (PSI). If there is an issue with STW18NM80, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW18NM80 part is unused and in its original packaging.

Return procedure for STW18NM80:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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