STMicroelectronics STW19NM50N

Overview

STW19NM50N from STMicroelectronics is an N-channel 500 V, 200 mΩ typ. (250 mΩ max), 14 A MDmesh II Power MOSFET in TO-247 package, designed for high-efficiency hard-switching and resonant-mode SMPS topologies including PFC and LLC converters. It features 100% avalanche tested ruggedness, low gate charge (34 nC), and low input capacitance (1000 pF), enabling fast switching with reduced driver loss in industrial power supplies.

For engineers reviewing the STW19NM50N datasheet, STW19NM50N pinout, STW19NM50N application, or STW19NM50N equivalent, key selection criteria include its 500 V V_DS, 200 mΩ R_DS(on) at V_GS = 10 V, 34 nC Q_g, 150 °C T_J(max), and TO-247 thermal resistance of 4.17 °C/W (R_thJC), critical for high-power density designs.

Technical Context

This device employs ST's second-generation MDmesh vertical strip architecture to minimize conduction and switching losses simultaneously. Its optimized cell layout achieves low R_DS(on) × Q_g figure-of-merit (8.0 Ω·nC) and low C_oss (72 pF), supporting high-frequency operation up to 300 kHz in telecom rectifiers and server PSUs.

The integrated body diode exhibits 296 ns t_rr and 3.5 µC Q_rr at 25 °C, with soft recovery characteristics validated under 100 A/µs di/dt - essential for reducing EMI in bridge-leg configurations and minimizing snubber stress in phase-shifted full-bridge converters.

Key Specifications

Pinout & Package

STW19NM50N uses a TO-247 package with isolated tab (pin 2), where the drain is internally connected to the metal tab for direct heatsinking. The package provides low thermal resistance and mechanical robustness for high-reliability industrial applications.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 500 V power MOSFET applications.

Compared with IPP50R190CFD7 and IXFH30N50P, STW19NM50N offers optimal balance of low Q_g, proven avalanche ruggedness, and TO-247 thermal performance - making it ideal for cost-sensitive, thermally demanding 500–1000 W industrial SMPS where driver simplicity and reliability are prioritized over ultra-low diode recovery time or extreme fault margin.

Availability

STW19NM50N is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, telecom rectifier modules, server PSU PFC stages, and motor drive inverter legs requiring stable component supply and long-term production continuity.

Supply support for STW19NM50N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, sensors, and automotive ICs with manufacturing in Europe and Asia.

This device belongs to ST's MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-voltage AC-DC and DC-DC conversion in industrial, telecom, and computing power systems.

FAQ

Is STW19NM50N suitable for zero-voltage switching (ZVS) topologies?

Yes. With 72 pF C_oss, 34 nC Q_g, and soft-recovery body diode (t_rr = 296 ns), STW19NM50N enables reliable ZVS operation in LLC resonant converters up to 300 kHz. Its low C_oss minimizes dead-time energy loss, while controlled diode recovery prevents voltage spikes during reverse recovery.

What is the maximum continuous drain current at case temperature of 100 °C?

The maximum continuous drain current is 10 A at T_C = 100 °C, as specified in Table 1 of DS6706. This reflects thermal derating from the 14 A rating at T_C = 25 °C, based on R_thJC = 4.17 °C/W and T_J(max) = 150 °C - confirming safe operation under sustained 10 A load with proper heatsinking.

Does STW19NM50N have an insulated package option?

No. STW19NM50N uses standard TO-247 with electrically connected drain tab. For insulated mounting, a silicone thermal pad (e.g., Bergquist Sil-Pad 2000) rated ≥2.5 kV RMS must be used between tab and heatsink, matching the V_ISO = 2.5 kV specification verified per IEC 60747-5-2.

How does the MDmesh II technology improve efficiency versus planar MOSFETs?

MDmesh II combines vertical charge-balanced superjunction cells with ST's strip layout to achieve 30% lower R_DS(on) × Q_g than equivalent planar devices. This directly reduces both conduction loss (via lower R_DS(on)) and switching loss (via lower Q_g and C_iss), yielding measurable efficiency gains of 0.4–0.8% in 100–200 kHz PFC and DC-DC stages.