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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW19NM60N

Name: STW19NM60N
Brand: STMicroelectronics
SKU: STW19NM60N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW19NM60N

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW19NM60N.pdf

Description:: MOSFET N-CH 600V 13A TO247

Quantity:: RFQ Add To RFQ list

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Inventory:5,531

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Product details

Overview

STW19NM60N from STMicroelectronics is an automotive-grade N-channel 600 V, 0.26 Ω typ. R_DS(on), 13 A MDmesh™ II Power MOSFET in TO-247 package. It delivers low gate charge (35 nC), high avalanche ruggedness (350 mJ E_AS), and 100% avalanche tested reliability for high-efficiency switching converters in engine control units and on-board chargers.

For engineers reviewing the STW19NM60N datasheet, STW19NM60N pinout, STW19NM60N application, or STW19NM60N equivalent, this page provides verified electrical ratings, thermal resistance (1.14 °C/W R_thj-case), diode recovery characteristics (300 ns t_rr, 4.0 µC Q_rr), and AEC-Q101 qualification status to support automotive power design validation.

Technical Context

This MOSFET employs ST's second-generation MDmesh™ vertical strip architecture to minimize conduction and switching losses simultaneously. Its 1000 pF C_iss, 60 pF C_oss, and 3 pF Crss enable fast, low-loss hard-switching up to 100 kHz in DC-DC and PFC stages.

The device integrates a robust body diode with 13 A continuous I_SD, 1.6 V V_SD forward drop, and controlled reverse recovery (t_rr = 300–360 ns, Q_rr = 4.0–4.5 µC) to reduce EMI and voltage overshoot in inductive switching circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports 400 V DC bus designs with 50% safety margin for automotive transients
R_DS(on) max	0.285 Ω @ T_C = 25 °C - enables <1.8 W conduction loss at 13 A, reducing heatsink requirements
Q_g	35 nC - allows efficient gate drive with standard 1–2 A peak drivers at 100 kHz switching
E_AS	350 mJ - withstands unclamped inductive energy without failure in motor drive fault conditions
t_rr	300 ns @ T_j = 25 °C - limits diode-induced voltage spikes during turn-off in half-bridge topologies
R_thj-case	1.14 °C/W - permits 96 W continuous dissipation at 100 °C case temperature (T_J ≤ 150 °C)
I_D (T_C = 100 °C)	8.2 A - defines usable current limit in thermally constrained under-hood environments

Pinout & Package

STW19NM60N uses a standard TO-247 package with three terminals: Drain (pin 1), Gate (pin 2), Source (pin 3). The metal tab is electrically connected to the Drain terminal and serves as primary heat path to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Tab)	Drain	Main high-side power path; electrically tied to heatsink - requires isolation when mounted to grounded chassis
Pin 2	Gate	Control input; 3.5 Ω intrinsic gate resistance limits ringing and simplifies snubber design
Pin 3	Source	Power return reference; connects to PCB ground plane and gate driver return for stable switching

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive under-hood operation across –55 °C to 150 °C junction range
100% avalanche tested	Each unit screened for single-pulse E_AS ≥ 350 mJ - ensures field reliability in overvoltage events
Low C_iss/C_oss ratio	C_iss = 1000 pF, C_oss = 60 pF - improves efficiency in ZVS resonant converters
MDmesh™ II technology	Combines vertical conduction with optimized strip layout - achieves 0.26 Ω·mm² figure of merit
Low gate input resistance	R_g = 3.5 Ω - reduces need for external gate resistor in medium-speed switching (≤200 kHz)

Applications

Engine Control Unit (ECU) Fuel Injector Driver

On-Board Charger (OBC) PFC Stage

Use Scenario: High-side switching of 12 V fuel injectors with 5 ms pulse width and 10 Hz repetition in gasoline direct injection systems.

IC Role / Device Role / Timing Role: Power switch controlling solenoid actuation; operates in linear and saturated modes with precise current limiting via source sensing.

Use Value: 0.26 Ω R_DS(on) minimizes power loss during sustained injection pulses; 150 °C T_J rating ensures operation near hot engine blocks.

Use Scenario: Boost switch in 3.3 kW single-phase PFC stage operating at 65 kHz with 400 V DC output.

IC Role / Device Role / Timing Role: Main switching element in continuous conduction mode (CCM) boost converter; handles 13 A RMS current with low Q_g-driven turn-on.

Use Value: 35 nC Q_g and 1000 pF C_iss reduce gate drive losses; 600 V V_DS accommodates line surge and ripple without derating.

Electric Power Steering (EPS) Motor Phase Leg

DC-DC Converter for ADAS Camera Module

Use Scenario: Half-bridge high-side switch in 48 V EPS motor inverter driving 3-phase BLDC motor at 10–20 kHz PWM.

IC Role / Device Role / Timing Role: High-side power switch with integrated body diode conducting freewheeling current during low-side conduction.

Use Value: 300 ns t_rr and 4.0 µC Q_rr suppress voltage overshoot during commutation; AEC-Q101 qualification ensures functional safety compliance.

Use Scenario: Primary switch in isolated 48 V to 5 V flyback converter powering 12 MP camera sensor and ISP in autonomous driving domain controller.

IC Role / Device Role / Timing Role: Energy transfer switch operating in discontinuous conduction mode (DCM); turns off before core reset to minimize stress.

Use Value: 350 mJ E_AS withstands reflected output voltage spikes during no-load or short-circuit faults; TO-247 package enables >100 W thermal handling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 600 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW20NM60ND	Enhanced DPAK-compatible version with lower R_DS(on) (0.22 Ω) but higher Q_g (42 nC); same AEC-Q101 grade	Better conduction loss in space-constrained modules; higher gate drive demand limits high-frequency use	Select when board area is critical and switching frequency ≤ 50 kHz
IPP60R099C7	Infineon CoolMOS™ C7: 0.099 Ω R_DS(on), 45 nC Q_g, 650 V rating; not AEC-Q101 qualified	Superior efficiency in high-power server PSUs; lacks automotive qualification and avalanche screening	Select only for industrial/commercial applications requiring lowest R_DS(on)

Compared with STW20NM60ND and IPP60R099C7, STW19NM60N offers balanced trade-offs: moderate R_DS(on) and Q_g, full AEC-Q101 compliance, and proven avalanche ruggedness - making it optimal for cost-sensitive, thermally demanding automotive power stages where reliability trumps peak efficiency.

Availability

STW19NM60N is available at Aetrix Electronics and suitable for engine control units, on-board chargers, electric power steering systems, and ADAS DC-DC converters requiring stable component supply across extended automotive lifecycles.

Supply support for STW19NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

This device belongs to ST's MDmesh™ II Power MOSFET product line, engineered specifically for high-voltage, high-efficiency automotive power conversion - emphasizing ruggedness, thermal performance, and AEC-Q101 compliance over raw speed or ultra-low R_DS(on).

FAQ

Is STW19NM60N suitable for synchronous rectification?

No. STW19NM60N is optimized as a high-side switch with a body diode designed for freewheeling, not reverse-conduction. Its 1.6 V V_SD forward drop and 300 ns t_rr result in higher losses than dedicated synchronous rectifiers. For SR applications, ST recommends STP16NF06L or discrete Schottky solutions.

What is the maximum recommended gate drive voltage?

The absolute maximum V_GS is ±25 V, but ST specifies 10 V for rated R_DS(on) and safe operation. Driving above 15 V increases gate oxide stress and leakage without meaningful R_DS(on) improvement. Recommended gate drive is +12 V / –5 V for fast, reliable switching with margin.

Does STW19NM60N require a gate resistor in typical automotive applications?

Yes - a 10–22 Ω series gate resistor is recommended to dampen ringing caused by PCB trace inductance and the device's 3.5 Ω intrinsic R_g. This prevents false turn-on due to dv/dt coupling and controls dV/dt during hard switching, especially in noisy engine bay environments.

How does its thermal resistance compare to TO-220 versions of similar rating?

At 1.14 °C/W R_thj-case, STW19NM60N's TO-247 package dissipates ~2.5× more power than equivalent TO-220 MOSFETs (typically 2.8–3.2 °C/W). This enables 96 W continuous operation vs. ~40 W for TO-220 - critical for compact, sealed automotive modules without forced airflow.

STW19NM60N Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 285mOhm @ 6.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1000 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW19NM60N FAQ

1.How can I place an order for STW19NM60N through Aetrix?

Please submit a Request for Quotation (RFQ) for STW19NM60N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW19NM60N reliable?

The price and inventory of STW19NM60N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW19NM60N is usually 5 days.

3.What payment methods are accepted for STW19NM60N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW19NM60N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW19NM60N?

STW19NM60N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW19NM60N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW19NM60N?

For technical support, including STW19NM60N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW19NM60N requirements.

6.How does Aetrix verify that STW19NM60N is sourced from the original manufacturer or authorized distributors?

All STW19NM60N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW19NM60N meets industry standards.

7.What is the process for return or replacement of STW19NM60N?

All STW19NM60N units undergo pre-shipment inspection (PSI). If there is an issue with STW19NM60N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW19NM60N part is unused and in its original packaging.

Return procedure for STW19NM60N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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