STMicroelectronics STW19NM65N

Overview

STW19NM65N from STMicroelectronics is a second-generation MDmesh™ N-channel power MOSFET designed for high-efficiency switching applications, featuring 650 V V_DSS, 0.25 Ω R_DS(on) (typ), 15.5 A continuous drain current at T_C = 25 °C, and TO-247 package with 100% avalanche testing. It delivers low gate charge (Q_g = 55 nC) and low input capacitance for fast, efficient hard-switching in industrial SMPS and PFC stages.

For engineers reviewing the STW19NM65N datasheet, STW19NM65N pinout, STW19NM65N application, or STW19NM65N equivalent, this device is selected for high-voltage, medium-power DC-DC converters where low conduction loss, robust unclamped inductive switching capability (E_AS = 400 mJ), and thermal reliability (R_thj-case = 0.83 °C/W) are critical design requirements.

Technical Context

This MOSFET implements ST's second-generation MDmesh™ vertical structure combined with strip layout to minimize both on-resistance and gate charge simultaneously. Its 650 V rating supports universal-input offline designs, while the 150 °C maximum junction temperature enables operation under sustained thermal stress.

The device features an integrated source-drain diode with t_rr = 460 ns (T_j = 25 °C) and Q_rr = 6 µC, optimized for snubberless flyback and resonant LLC topologies. Gate threshold voltage (V_GS(th)) is tightly specified at 2–4 V, ensuring stable turn-on across temperature and enabling direct drive from standard 10 V gate drivers.

Key Specifications

Pinout & Package

STW19NM65N is housed in a through-hole TO-247 package with three terminals: Drain (pin 1), Gate (pin 2), and Source (pin 3). The metal tab is electrically connected to the Drain terminal and serves as the primary heat transfer path to the heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Compared with STW20NM65N and IPP65R280C7, STW19NM65N offers the best balance of avalanche ruggedness, gate drive simplicity, and thermal performance for industrial SMPS-making it ideal where reliability under transient overload is non-negotiable.

Availability

STW19NM65N is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, telecom rectifiers, and photovoltaic DC-DC converters requiring stable component supply and long-term manufacturing continuity.

Supply support for STW19NM65N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.

The STW19NM65N belongs to ST's MDmesh™ high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in offline power conversion systems up to 650 V.

FAQ

Is STW19NM65N suitable for use in zero-voltage switching (ZVS) topologies?

Yes. Its low C_oss (110 pF) and C_oss,eq (230 pF) enable reliable ZVS in LLC and phase-shifted full-bridge converters. Measured t_r/t_f of 8 ns/26 ns supports clean transitions, and the 30 V/ns dv/dt rating ensures stability under fast voltage transitions typical in resonant designs.

What is the maximum continuous drain current at 100 °C case temperature?

The maximum continuous drain current at T_C = 100 °C is 10 A, as specified in Table 2 of the datasheet. This derating reflects thermal limits of the TO-247 package and ensures safe operation within the 150 °C maximum junction temperature under sustained load conditions.

Does STW19NM65N require a negative gate voltage for reliable turn-off?

No. The device has a ±25 V absolute maximum gate-source voltage rating, but standard 0 V to +10 V gate drive is sufficient for full enhancement and robust turn-off. A negative bias is not required, though −5 V may be used to improve noise immunity in high-dv/dt environments.

Can STW19NM65N replace STP19NM65N in existing TO-220 designs?

No - STW19NM65N uses TO-247 packaging, which has different mechanical footprint, mounting hole spacing, and thermal interface geometry than TO-220. Direct replacement would require PCB redesign, heatsink retooling, and thermal validation due to differing R_thj-case (0.83 vs. 0.83 °C/W for TO-220 is not applicable - TO-220 R_thj-case is 0.83 °C/W only for STP19NM65N, but STW19NM65N's TO-247 R_thj-case is also 0.83 °C/W per datasheet Table 3).