Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW200NF03

Name: STW200NF03
Brand: STMicroelectronics
SKU: STW200NF03
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STW200NF03

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW200NF03.pdf

Description:: MOSFET N-CH 30V 120A TO247-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:4,873

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STW200NF03 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in TO-247 package, designed for high-current synchronous rectification and OR-ing functions. It delivers R_DS(on) = 0.002 Ω (typ), V_DSS = 30 V, I_D = 120 A (continuous), and 100% avalanche tested for robustness in DC-DC converters.

For engineers reviewing the STW200NF03 datasheet, STW200NF03 pinout, STW200NF03 application, or STW200NF03 equivalent, key selection criteria include ultra-low on-resistance, fast switching (t_d(on) = 50 ns, t_d(off) = 100 ns), gate charge (Q_g = 210 nC), diode recovery performance (t_rr = 90 ns), and thermal resistance (R_thj-case = 0.43 °C/W).

Technical Context

This MOSFET employs ST's STripFET™ II process to minimize input capacitance (C_iss = 385 nF) and gate charge, enabling high-efficiency operation at high switching frequencies. Its low R_DS(on) and optimized body diode (V_SD = 1.3 V, t_rr = 90 ns) support zero-voltage switching and reduce conduction and recovery losses.

The device features a fully rated 30 V drain-source breakdown voltage with ±20 V gate tolerance, 100% unclamped inductive avalanche testing (E_AS = 4 J), and operates up to T_j = 175 °C. Thermal design is supported by low junction-to-case resistance (0.43 °C/W) and TO-247 mechanical robustness.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage for 12 V/24 V bus-level power stages
R_DS(on)	0.002 Ω (typ) - Enables <150 mW conduction loss at 120 A, critical for high-efficiency OR-ing
I_D (cont)	120 A @ T_C = 25°C - Sustains full-rated current with minimal heatsink in forced-air cooling
Q_g	210 nC - Low gate drive energy supports efficient 300–500 kHz PWM control without excessive driver loss
t_rr	90 ns - Fast body diode recovery reduces shoot-through risk and EMI in synchronous buck topologies
R_thj-case	0.43 °C/W - Allows direct mounting to cold plate for >300 W dissipation at ΔT = 129 °C

Pinout & Package

STW200NF03 uses the standard TO-247 package with three terminals: Drain (tab), Source (pin 1), and Gate (pin 2). The metal tab is electrically connected to the Drain and serves as primary heat path.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current-carrying terminal, tied to high-side switch node or bus rail	Electrically and thermally coupled to heatsink; requires isolation washer if heatsink is grounded
Source (Pin 1)	Reference node for gate drive and current sensing	Low-inductance connection essential for stable gate control and accurate R_DS(on)-based current monitoring
Gate (Pin 2)	Control electrode for channel modulation	Requires low-impedance gate driver (RG ≤ 4.7 Ω) to achieve specified 50 ns turn-on delay and minimize switching loss

Key Features

Feature	Design Value
Ultra-low R_DS(on)	0.002 Ω typ enables <150 mW conduction loss at 120 A, reducing thermal load in compact power modules
100% avalanche rated	4 J single-pulse energy rating ensures survivability during transient overloads in unregulated DC-DC outputs
Optimized body diode	1.3 V forward drop and 90 ns reverse recovery support efficient synchronous rectification without external Schottky
Low gate charge	210 nC total charge allows use of cost-effective gate drivers while maintaining <100 ns switching transitions
High-current SOA	480 A pulsed rating (IDM) supports peak-load handling in server VRMs and telecom hot-swap circuits

Applications

Server VRM Output Stage

Telecom Hot-Swap OR-ing

Use Scenario: High-current, high-efficiency output stage in 48 V–12 V intermediate bus converters for AI accelerators.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck converter, operating at 300–400 kHz.

Use Value: 0.002 Ω R_DS(on) cuts conduction loss by >40% vs. comparable 3.5 mΩ devices, improving full-load efficiency to >95.2%.

Use Scenario: Redundant 12 V power supply OR-ing in carrier-grade base station backplanes.

IC Role / Device Role / Timing Role: N-channel MOSFET used in active OR-ing controller circuit to replace ideal diodes.

Use Value: Ultra-low on-resistance minimizes voltage drop (<240 mV at 120 A), enabling tighter bus regulation and reduced thermal derating.

Industrial Motor Drive Inverter

High-Power LED Driver

Use Scenario: Half-bridge leg in 5 kW servo drive inverters with 20 kHz PWM switching.

IC Role / Device Role / Timing Role: High-current switching element in IGBT gate-drive auxiliary supply and regenerative braking path.

Use Value: 100% avalanche testing and 480 A pulsed rating ensure reliability during motor stall and short-circuit events.

Use Scenario: Constant-current switch in 200 W architectural LED drivers with analog dimming.

IC Role / Device Role / Timing Role: Primary current-control FET in linear+switching hybrid topology for ripple-free dimming.

Use Value: Low R_DS(on) and 0.43 °C/W thermal resistance allow direct PCB copper pour heatsinking-eliminating discrete heatsinks.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, low-R_DS(on) N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFP4368PbF	R_DS(on) = 0.0022 Ω (typ), Q_g = 240 nC, TO-247	Higher gate charge increases driver loss; slightly higher R_DS(on) raises conduction loss by ~10%	Preferred where legacy IR design reuse is required and minor efficiency trade-off is acceptable
IXTH120N30L2	R_DS(on) = 0.0025 Ω (typ), t_rr = 120 ns, TO-247	Slower diode recovery increases switching loss in high-frequency synchronous rectifiers	Better suited for lower-frequency (<150 kHz) motor drive applications where diode speed is less critical

Compared with IRFP4368PbF and IXTH120N30L2, STW200NF03 offers the lowest combined conduction and switching loss in high-frequency, high-current OR-ing and VRM designs due to its superior R_DS(on)/Q_g ratio and fastest body diode recovery.

Availability

STW200NF03 is available at Aetrix Electronics and suitable for server VRMs, telecom OR-ing circuits, and industrial motor drive inverters requiring stable component supply and long-term production continuity.

Supply support for STW200NF03 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, and automotive ICs.

The STripFET™ II MOSFET product line was engineered specifically for high-efficiency, high-current power conversion-targeting synchronous rectification, OR-ing, and DC-DC converter primary/secondary switches.

FAQ

Is STW200NF03 suitable for paralleling multiple devices in high-current applications?

Yes. Its positive temperature coefficient of R_DS(on) ensures inherent current sharing across paralleled units. Layout must maintain matched gate drive paths and symmetrical source inductance to avoid dynamic imbalance. Derate total current by 15% for thermal margin when using ≥3 devices.

What is the maximum recommended gate resistor value for reliable switching?

For optimal switching performance and safe operation, RG should not exceed 4.7 Ω when driving from a 12 V gate driver. Higher values increase turn-on/off times and switching loss; values >10 Ω risk exceeding safe operating area during hard-switching transients at full current.

Does STW200NF03 require a gate driver with negative turn-off capability?

No. The device operates reliably with standard 0 V to +10 V or +12 V gate drive. However, applying –5 V during turn-off improves immunity to dV/dt-induced false turn-on in high-noise environments such as motor drives or multi-phase converters.

Can STW200NF03 be used in linear mode (non-switching) applications?

It is not recommended. While rated for 350 W at T_C = 25°C, its Safe Operating Area (SOA) limits linear-mode operation to very short pulses (<10 ms) at low V_DS. Continuous linear use risks thermal runaway due to R_DS(on)'s positive tempco and limited second breakdown energy.

STW200NF03 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ II

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.8mOhm @ 60A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 280 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 10000 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 350W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW200NF03 FAQ

1.How can I place an order for STW200NF03 through Aetrix?

Please submit a Request for Quotation (RFQ) for STW200NF03 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW200NF03 reliable?

The price and inventory of STW200NF03 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW200NF03 is usually 5 days.

3.What payment methods are accepted for STW200NF03?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW200NF03 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW200NF03?

STW200NF03 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW200NF03 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW200NF03?

For technical support, including STW200NF03 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW200NF03 requirements.

6.How does Aetrix verify that STW200NF03 is sourced from the original manufacturer or authorized distributors?

All STW200NF03 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW200NF03 meets industry standards.

7.What is the process for return or replacement of STW200NF03?

All STW200NF03 units undergo pre-shipment inspection (PSI). If there is an issue with STW200NF03, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW200NF03 part is unused and in its original packaging.

Return procedure for STW200NF03:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-03 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-01 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…