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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW20N65M5

Name: STW20N65M5
Brand: STMicroelectronics
SKU: STW20N65M5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW20N65M5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW20N65M5.pdf

Description:: MOSFET N-CH 650V 18A TO247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STW20N65M5 from STMicroelectronics is an N-channel 650 V, 18 A MDmesh™ V Power MOSFET in TO-247 package, featuring 0.160 Ω typ. R_DS(on), 15 V/ns dv/dt capability, and 100% avalanche tested for ruggedness. It serves as a high-voltage switching device in offline SMPS, PFC stages, and industrial motor drives requiring high power density and low conduction loss.

For engineers reviewing the STW20N65M5 datasheet, STW20N65M5 pinout, STW20N65M5 application, or STW20N65M5 equivalent, this page delivers verified electrical ratings, thermal performance data, gate charge behavior, diode recovery metrics, and real-world switching timing under 400 V/12 A conditions with 4.7 Ω gate resistance.

Technical Context

This MOSFET employs ST's MDmesh™ V vertical silicon process combined with PowerMESH™ horizontal layout to achieve industry-leading R_DS(on) × area efficiency. Its 650 V V_DSS rating supports universal-input AC-DC designs up to 400 V DC bus, while 15 V/ns dv/dt immunity ensures robust operation during fast switching transients.

The device integrates a fast-recovery body diode with 288 ns trr (T_j = 25 °C) and 4 µC Q_rr, enabling hard-switched topologies without external snubbers. Total gate charge is 36 nC at V_GS = 10 V, supporting efficient drive with standard gate drivers like STGAP2SIC.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - Supports 400 V DC bus with 30 % margin for surge and ringing in offline converters.
R_DS(on) typ.	0.160 Ω - Enables <1.3 W conduction loss at 9 A continuous drain current (T_C = 25 °C).
I_D cont. @ T_C = 100 °C	11.3 A - Sustains full-load operation in thermally constrained industrial enclosures without derating.
E_AS	270 mJ - Withstands unclamped inductive switching events without failure, eliminating need for external clamping circuits.
dv/dt immunity	15 V/ns - Prevents spurious turn-on during high-slew-rate voltage transitions in bridge-leg configurations.
Q_g	36 nC - Matches standard 1–2 A peak gate drivers; enables <100 ns turn-on delay with 4.7 Ω gate resistor.
trr / Q_rr	288 ns / 4 µC - Reduces reverse recovery losses in synchronous rectification and LLC resonant converters.

Pinout & Package

STW20N65M5 uses the TO-247 package: a 3-pin through-hole power package with isolated tab (drain-connected), optimized for high-power thermal dissipation and mechanical stability on heatsinks.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Source terminal	Low-side reference node; connects to PCB ground plane or source return path in half-bridge configuration.
2 (Gate)	Control input	High-impedance MOSFET control node; requires low-inductance routing and RC snubber for EMI suppression.
3 (Drain)	Power output	High-voltage switching node; electrically connected to metal tab for direct heatsink mounting and thermal conduction.

Key Features

Feature	Design Value
MDmesh™ V silicon technology	Delivers lowest R_DS(on) × area among 650 V silicon MOSFETs, reducing die size and system footprint by ≥25 % vs prior generations.
100 % avalanche rated	Guarantees single-pulse energy handling up to 270 mJ without parameter shift-critical for PFC boost inductors and flyback snubberless designs.
Enhanced dv/dt immunity	15 V/ns rating eliminates false triggering in high-noise environments such as variable-frequency drives and welding inverters.
Optimized body diode	288 ns reverse recovery time with soft recovery waveform minimizes voltage overshoot and EMI in hard-switched topologies.
TO-247 thermal performance	0.96 °C/W R_thj-case enables >100 W continuous power dissipation with standard finned heatsink and thermal paste.

Applications

Industrial Switch-Mode Power Supplies

Server & Telecom Rectifiers

Use Scenario: Primary-side switching in 1–3 kW telecom rectifiers operating from 90–264 V AC input.

IC Role / Device Role / Timing Role: High-voltage N-channel switch in active-clamp forward or LLC resonant converter primary leg.

Use Value: 0.160 Ω R_DS(on) reduces conduction loss by 18 % vs legacy 600 V MOSFETs, improving full-load efficiency to >94 %.

Use Scenario: Boost PFC stage in 2 kW server power supply with universal AC input and 380 V DC link.

IC Role / Device Role / Timing Role: Fast-switching PFC switch handling 12 A RMS current at 65–100 kHz.

Use Value: 36 nC Q_g and 288 ns trr enable zero-current switching transition, cutting switching loss by 32 % over Si-based alternatives.

Solar Microinverters

Motor Drive Inverters

Use Scenario: DC–AC H-bridge switching in 300–500 W photovoltaic microinverters with transformerless topology.

IC Role / Device Role / Timing Role: High-side and low-side switch in split-phase inverter leg, operating at 40–60 kHz.

Use Value: 15 V/ns dv/dt immunity prevents shoot-through during fast voltage transitions across parasitic capacitances in floating-leg configurations.

Use Scenario: Inverter output stage in 1.5 kW HVAC compressor drive with field-oriented control.

IC Role / Device Role / Timing Role: 650 V IGBT replacement in 3-phase inverter bridge, driven by isolated gate driver.

Use Value: 11.3 A continuous current at 100 °C case temperature sustains full torque delivery without forced air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R019C7	650 V, 0.019 Ω R_DS(on), TO-247, CoolMOS™ C7 - lower R_DS(on) but higher Q_g (52 nC) and cost.	Better conduction loss below 5 A; less suitable for high-frequency PFC due to slower switching.	Prefer when thermal budget is tight and switching frequency ≤ 65 kHz.
IXFH30N65X2	650 V, 0.095 Ω R_DS(on), TO-247, HiPerFET X2 - higher R_DS(on), lower Q_rr (2.1 µC), no avalanche rating.	Lower reverse recovery loss but requires external avalanche protection in unclamped inductive loads.	Choose only where strict avalanche ruggedness is not required and cost sensitivity dominates.

Compared with IPW65R019C7 and IXFH30N65X2, STW20N65M5 offers balanced trade-offs: best-in-class R_DS(on) × Q_g ratio (4.4 Ω·nC), guaranteed avalanche capability, and proven reliability in long-lifecycle industrial deployments.

Availability

STW20N65M5 is available at Aetrix Electronics and suitable for industrial motor drives, telecom rectifiers, solar microinverters, and offline SMPS requiring stable component supply across multi-year production cycles.

Supply support for STW20N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.

STW20N65M5 belongs to the MDmesh™ V Power MOSFET product line, engineered specifically for high-efficiency, high-reliability 650 V switching in industrial and renewable energy systems where ruggedness and thermal performance are critical.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STW20N65M5 supports 11.3 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the official datasheet (Doc ID 022865 Rev 2). This value reflects derating due to thermal resistance and ensures safe operation without exceeding 150 °C junction temperature under steady-state conditions.

Is STW20N65M5 suitable for use in hard-switched PFC circuits?

Yes - its 288 ns reverse recovery time (trr), 4 µC Q_rr, and 15 V/ns dv/dt immunity make it well-suited for continuous-conduction-mode (CCM) PFC stages. The body diode's soft recovery characteristic reduces voltage overshoot and EMI, and the 100 % avalanche rating protects against inductor saturation events.

Does STW20N65M5 require a negative gate voltage for reliable turn-off?

No - the gate threshold voltage (V_GS(th)) ranges from 3 V to 5 V, and the device is fully enhanced at V_GS = 10 V. While a negative gate bias (e.g., –5 V) improves noise immunity in high-dv/dt environments, it is not required for functional turn-off; 0 V gate voltage ensures complete depletion.

How does the TO-247 package affect thermal design compared to TO-220?

The TO-247 package provides 0.96 °C/W junction-to-case thermal resistance versus ~1.5 °C/W for TO-220 variants, enabling ~40 % higher power dissipation at the same case temperature. Its larger tab area and improved mechanical rigidity also support more robust heatsink attachment and vibration resistance in industrial installations.

STW20N65M5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ V

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 190mOhm @ 9A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 45 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1345 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 130W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW20N65M5 FAQ

1.How can I place an order for STW20N65M5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STW20N65M5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW20N65M5 reliable?

The price and inventory of STW20N65M5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW20N65M5 is usually 5 days.

3.What payment methods are accepted for STW20N65M5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW20N65M5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW20N65M5?

STW20N65M5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW20N65M5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW20N65M5?

For technical support, including STW20N65M5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW20N65M5 requirements.

6.How does Aetrix verify that STW20N65M5 is sourced from the original manufacturer or authorized distributors?

All STW20N65M5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW20N65M5 meets industry standards.

7.What is the process for return or replacement of STW20N65M5?

All STW20N65M5 units undergo pre-shipment inspection (PSI). If there is an issue with STW20N65M5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW20N65M5 part is unused and in its original packaging.

Return procedure for STW20N65M5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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