STMicroelectronics STW20N90K5

Overview

STW20N90K5 from STMicroelectronics is a 900 V, 20 A N-channel power MOSFET in TO-247 package, built on MDmesh K5 vertical structure technology. It delivers 210 mΩ typical R_DS(on), 40 nC total gate charge, and 500 mJ single-pulse avalanche energy-enabling high-efficiency, high-density switching in HV offline SMPS and industrial motor drives.

For engineers reviewing the STW20N90K5 datasheet, STW20N90K5 pinout, STW20N90K5 application, or STW20N90K5 equivalent, key selection criteria include its ultra-low FoM (R_DS(on) × Q_g = 8.4 Ω·nC), 100% avalanche-tested ruggedness, Zener-protected gate, and proven dv/dt immunity up to 50 V/ns in MOSFET mode.

Technical Context

This device implements ST's MDmesh K5 proprietary vertical superjunction architecture, achieving simultaneous reduction in both conduction loss (via optimized pillar doping and geometry) and switching loss (via minimized C_iss, C_oss, and Crss). Its 1500 pF input capacitance and 78 pF energy-related output capacitance support fast, low-loss hard-switching at 720 V bus voltage.

The integrated source-drain diode features 517 ns reverse recovery time and 11.4 µC Q_rr at 25 °C, with controlled I_RRM of 44 A-making it suitable for quasi-resonant and LLC topologies where diode commutation stress must be managed without external snubbers.

Key Specifications

Pinout & Package

Delivered in industry-standard TO-247 package with isolated tab (drain-connected), offering high thermal conductivity and mechanical robustness for high-power mounting. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IXTH20N90L and IPP90R1K2C3, STW20N90K5 uniquely balances ultra-low FoM, full avalanche ruggedness, and integrated gate protection-making it optimal for mission-critical 70–200 kHz industrial and EV power stages where reliability and power density are co-prioritized.

Availability

STW20N90K5 is available at Aetrix Electronics and suitable for industrial motor drives, telecom SMPS, EV onboard chargers, and high-voltage PFC stages requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for STW20N90K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MEMS, power, and microcontroller solutions for automotive, industrial, and consumer markets.

This device belongs to ST's MDmesh™ K5 high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-power-density offline switching applications demanding ruggedness, low FoM, and simplified system design.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STW20N90K5 supports 13 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS11570 Rev 4. This derating reflects thermal limits of the TO-247 package and silicon, ensuring safe operation within SOA boundaries when heatsink temperature remains ≤100 °C.

Does this MOSFET require an external gate resistor for stability?

A gate resistor is required for practical drive circuit implementation, though not strictly for intrinsic stability. With 40 nC Q_g and 3.7 Ω intrinsic R_g, a 4.7 Ω external resistor is recommended (per Figure 1 test conditions) to control dV/dt, limit peak gate current, and damp ringing-especially in half-bridge layouts with parasitic inductance.

Is the source-drain diode suitable for freewheeling in synchronous rectification?

No-the body diode is not optimized for synchronous rectification. Its 1.5 V forward voltage and 11.4 µC Q_rr produce significant conduction and recovery losses. For SR applications, use dedicated low-V_F Schottky or GaN FETs; this MOSFET is intended for primary-side switching only.

How is avalanche ruggedness validated for production units?

Every STW20N90K5 unit undergoes 100% production-level unclamped inductive switching (UIS) testing at I_AR = 6.5 A and V_DD = 50 V, verifying minimum 500 mJ E_AS. This screen ensures each device meets the single-pulse avalanche energy spec without degradation-no sampling or statistical qualification is used.