STMicroelectronics STW20N95DK5

Overview

STW20N95DK5 from STMicroelectronics is a 950 V, 18 A N-channel MDmesh DK5 Power MOSFET in TO-247 package with fast-recovery body diode, 330 mΩ max R_DS(on), and 50 V/ns dv/dt ruggedness. It serves as a high-voltage switching device in resonant and hard-switched bridge topologies for industrial SMPS and HV DC-DC converters.

For engineers reviewing the STW20N95DK5 datasheet, STW20N95DK5 pinout, STW20N95DK5 application, or STW20N95DK5 equivalent, key selection criteria include avalanche energy rating (520 mJ), low Q_rr (1–2.9 µC), gate charge (50.7 nC), and thermal resistance (0.5 °C/W junction-to-case).

Technical Context

This MOSFET employs ST's MDmesh DK5 silicon technology optimized for high-voltage switching with minimized recovery charge and enhanced R_DS(on) × area efficiency. Its fast-recovery body diode enables reliable operation in half-bridge configurations without external anti-parallel diodes.

The device features 100% unclamped inductive switching (UIS) tested to 6 A/520 mJ at T_J = 25 °C and maintains stable V_(BR)DSS (950 V min) across –75 to 125 °C. Gate threshold voltage is tightly specified (3–5 V) and exhibits low temperature drift.

Key Specifications

Pinout & Package

STW20N95DK5 uses the standard TO-247 package with isolated tab (drain-connected). The three leads are arranged linearly: Pin 1 = Gate (G), Pin 2 = Drain (D, connected to metal tab), Pin 3 = Source (S).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage switching applications.

Compared with STWA20N95DK5, the STW20N95DK5 offers identical performance in a standard TO-247 footprint ideal for press-fit or screw-down heatsinks; versus IXTH20N90L2, it provides 50 V higher blocking voltage and 63% greater avalanche energy, enabling more robust operation in grid-tied and industrial HV systems.

Availability

STW20N95DK5 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, high-voltage DC-DC converters, and motor drive inverters requiring stable component supply and long-term production continuity.

Supply support for STW20N95DK5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to the MDmesh DK5 family - engineered specifically for high-efficiency, high-voltage switching in resonant and hard-switched topologies where low Q_rr, high dv/dt immunity, and avalanche robustness are critical.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STW20N95DK5 supports 11 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS12132 Rev 3. This derating reflects thermal limits of the TO-247 package and silicon, not electrical degradation. At 25 °C case, it delivers 18 A continuously with R_DS(on) = 330 mΩ max.

Does the body diode require external snubbing in hard-switched applications?

No external snubbing is required due to the fast-recovery diode's low Q_rr (1 µC typ.) and soft recovery characteristics. Measured trr is 150 ns at 25 °C and 264 ns at 150 °C, with I_RRM limited to 13.5–22 A - well within safe operating area when used with appropriate gate drive and layout.

Can STW20N95DK5 replace older STW20NK90Z in existing designs?

Yes - it is a direct upgrade: same TO-247 package, improved 950 V rating (vs. 900 V), lower R_DS(on) (330 mΩ vs. 380 mΩ), and reduced Q_rr (1 µC vs. 2.2 µC). Gate threshold and dynamic parameters are compatible; no schematic or layout changes are needed for drop-in replacement.

Is the metal tab electrically isolated from the source terminal?

No - the metal tab is internally connected to the drain (Pin 2), as confirmed by the pinout diagram AM01475v1_noZen and package drawings in DS12132. When mounted to a heatsink, the drain must be either insulated or referenced to the same potential as the heatsink to prevent short circuits.