STMicroelectronics STW20N95K5

Overview

STW20N95K5 from STMicroelectronics is a 950 V, 275 mΩ typ., 17.5 A N-channel Power MOSFET in TO-247 package, built on MDmesh K5 vertical structure for ultra-low R_DS(on) and gate charge. It delivers 250 W total power dissipation at T_C = 25 °C, features 100% avalanche testing, Zener gate protection, and 2.5 kV insulation withstand voltage - deployed in high-voltage industrial SMPS and PFC stages.

For engineers reviewing the STW20N95K5 datasheet, STW20N95K5 pinout, STW20N95K5 application, or STW20N95K5 equivalent, this page provides verified pin functions, thermal resistance (R_thJC = 0.5 °C/W), switching timing (t_d(off) = 65 ns typ.), avalanche energy (E_AS = 200 mJ), and real-world design meaning for high-efficiency HV converters.

Technical Context

This device uses ST's MDmesh K5 proprietary vertical superjunction architecture to achieve 275 mΩ typ. R_DS(on) at 950 V rating - reducing conduction loss while maintaining rugged dv/dt capability (50 V/ns). Its 48 nC total gate charge and 32.5 nC Q_gd enable fast, low-loss switching in hard-switched topologies.

The integrated Zener-protected gate ensures ±30 V V_GS robustness, and its 100% unclamped inductive avalanche test (I_AR = 6 A, E_AS = 200 mJ) confirms reliability under transient overloads. The source-drain diode exhibits 1.5 V forward drop at 17.5 A and 513 ns reverse recovery time at 150 °C.

Key Specifications

Pinout & Package

STW20N95K5 is housed in a TO-247 package with isolated tab (drain-connected), offering low thermal resistance (R_thJC = 0.5 °C/W) and high-voltage creepage clearance. The metal tab serves as the drain terminal and must be electrically isolated from heatsink unless referenced to system ground.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP20N95K5, STW20N95K5 delivers 6.2× better thermal performance and full 950 V rating; versus IXTH20N90L2, it adds Zener gate protection, 2.5 kV isolation, and 5% lower conduction loss - critical for certified industrial and automotive-grade systems.

Availability

STW20N95K5 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, telecom rectifier modules, and EV onboard charger PFC stages requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STW20N95K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STW20N95K5 belongs to the MDmesh K5 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-power-density switching applications in 800 V-class industrial and EV infrastructure systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STW20N95K5 supports 11 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS6616 Rev 6. This derating reflects thermal limitations of the TO-247 package and ensures safe operation within the SOA boundary at elevated temperatures.

Does STW20N95K5 include an integrated body diode, and what are its key parameters?

Yes - it features a monolithic source-drain diode rated for 17.5 A continuous and 70 A pulsed current. At 17.5 A and T_J = 25 °C, forward voltage is 1.5 V; reverse recovery time is 513 ns with 12 μC Q_rr under standard test conditions (di/dt = 100 A/μs, V_DD = 60 V).

Can STW20N95K5 be used in synchronous rectification topologies?

No - STW20N95K5 is optimized as a high-voltage primary-side switch, not a low-V_F synchronous rectifier. Its body diode has relatively high V_SD (1.5 V) and slow t_rr (513 ns), making it unsuitable for secondary-side synchronous rectification where low conduction loss and fast recovery are mandatory.

What is the gate threshold voltage range, and how does it vary with temperature?

V_GS(th) is specified from 3 V to 5 V at 25 °C (Table 4), with typical value 4 V. Figure 13 shows normalized V_GS(th) decreases to ~0.85× nominal at 150 °C junction temperature, meaning threshold drops to ~3.4 V - critical for ensuring turn-on margin in high-temperature environments.