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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW20NM65N

Name: STW20NM65N
Brand: STMicroelectronics
SKU: STW20NM65N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW20NM65N

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW20NM65N.pdf

Description:: MOSFET N-CH 650V 19A TO247-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STW20NM65N from STMicroelectronics is an N-channel 650 V, 19 A, 0.16 Ω R_DS(on) Power MOSFET in TO-247 package, designed for high-efficiency switching converters using second-generation MDmesh™ technology. It delivers low gate charge (70 nC), low input capacitance (2500 pF), and 100% avalanche tested ruggedness, enabling use in industrial SMPS, PFC stages, and solar inverters.

For engineers reviewing the STW20NM65N datasheet, STW20NM65N pinout, STW20NM65N application, or STW20NM65N equivalent, key selection criteria include its 650 V V_DSS, 0.16 Ω R_DS(on) at V_GS = 10 V, 70 nC total gate charge, TO-247 thermal performance (R_thj-case = 0.78 °C/W), and unclamped inductive switching capability.

Technical Context

This device implements ST's second-generation MDmesh™ vertical structure with strip layout to minimize conduction and switching losses simultaneously. Its 650 V breakdown voltage is rated at 710 V under TJ_max conditions, and it supports fast switching with 25 ns turn-on delay and 80 ns turn-off delay under 4.7 Ω gate drive.

The integrated source-drain diode features 1.3 V forward voltage at 19 A and exhibits 460 ns reverse recovery time at 25 °C, making it suitable for hard-switched topologies where diode recovery behavior critically impacts EMI and efficiency.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - Maximum drain-source blocking voltage; ensures safe operation in 400 V AC rectified bus applications with margin.
R_DS(on) max	0.19 Ω - Confirmed worst-case on-resistance at V_GS = 10 V, ID = 9.5 A, defining conduction loss in continuous operation.
Q_g	70 nC - Total gate charge required for full enhancement; directly determines gate driver power and switching speed trade-offs.
I_D cont @ T_C = 25°C	19 A - Continuous drain current rating at case temperature 25 °C; derates to 12 A at 100 °C per thermal limits.
R_thj-case	0.78 °C/W - Junction-to-case thermal resistance in TO-247 package; enables 160 W dissipation at 25 °C case temperature.
E_AS	500 mJ - Single-pulse avalanche energy; confirms robustness against inductive switching transients without external snubbers.
C_iss	2500 pF - Input capacitance at V_DS = 50 V; governs gate drive current demand and Miller effect during switching transitions.

Pinout & Package

STW20NM65N uses a 3-pin TO-247 package with isolated mounting flange. The case is electrically connected to the drain terminal, requiring proper heatsink isolation in high-voltage designs.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives 10 V gate drive to fully enhance channel; 2.5 Ω gate input resistance affects high-frequency impedance matching.
2 (Drain)	High-side power terminal	Connected to heatsink via metal tab; carries full load current and withstands 650 V DC blocking; requires creepage clearance.
3 (Source)	Reference and return path	Serves as common reference for gate drive and current sensing; forms low-inductance loop with drain for switching node integrity.

Key Features

Feature	Design Value
Second-generation MDmesh™ structure	Enables 0.16 Ω R_DS(on) at 650 V, reducing conduction loss by ~25% vs. first-gen equivalents in same package.
100% avalanche tested	Guarantees 6 A repetitive avalanche current and 500 mJ single-pulse energy handling without parameter shift or failure.
Low Q_g/Q_gd ratio	70 nC total gate charge with 40 nC gate-drain component yields favorable Miller plateau control for stable hard-switching.
ECOPACK® lead-free construction	Meets RoHS Directive 2011/65/EU and JEDEC JESD97; marked on package and inner box label for traceability.
Fast body diode recovery	460 ns t_rr at 25 °C and 7 µC Q_rr reduce switching losses and EMI in bridge-leg configurations.

Applications

Industrial Switch-Mode Power Supplies

Photovoltaic String Inverters

Use Scenario: Primary-side switching in 1–3 kW off-line SMPS with universal AC input (90–264 VAC).

IC Role / Device Role / Timing Role: High-voltage N-channel switch in LLC or hard-switched flyback topology operating at 65–100 kHz.

Use Value: 0.16 Ω R_DS(on) and 70 nC Q_g enable >94% efficiency at full load while maintaining thermal margin in forced-air-cooled enclosures.

Use Scenario: DC–DC boost stage in string inverters converting 300–1000 V DC PV array output to intermediate bus.

IC Role / Device Role / Timing Role: Unidirectional high-voltage switch controlling energy transfer into DC-link capacitor.

Use Value: 650 V V_DSS with 710 V surge rating accommodates PV open-circuit voltage spikes; avalanche ruggedness prevents failure during partial shading events.

Server PSU Active Clamp Forward Converters

Induction Heating Half-Bridge Stages

Use Scenario: Main switch in active-clamp forward converter delivering 12 V/200 A to server motherboard VRMs.

IC Role / Device Role / Timing Role: Synchronous rectifier replacement in clamp reset path with precise timing control.

Use Value: Low C_oss (120 pF) and fast trr (460 ns) minimize clamp loss and allow tight dead-time optimization without shoot-through risk.

Use Scenario: High-side switch in 20–50 kHz resonant half-bridge driving induction coils in domestic cooktops.

IC Role / Device Role / Timing Role: Fast-turning N-channel switch managing high di/dt (≥400 A/µs) and reverse recovery stress.

Use Value: 15 V/ns dv/dt immunity and 76 A pulsed current rating ensure reliable operation under high-current resonant switching with minimal snubber loss.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage Power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW20NK60Z	600 V V_DSS, 0.19 Ω R_DS(on), 72 nC Q_g, Zener-protected gate	Limited to 400 V AC input systems; lower voltage margin reduces design flexibility in high-line or transient-prone grids.	Prefer when cost sensitivity outweighs 50 V headroom requirement and Zener protection adds value in noisy gate-drive environments.
IPP65R190CFD7	650 V V_DSS, 0.19 Ω R_DS(on), 55 nC Q_g, CoolMOS™ CFD7 superjunction architecture	Lower Q_g improves light-load efficiency but exhibits higher C_oss (140 pF), increasing turn-off loss at high V_DS.	Choose for ultra-high-frequency (>200 kHz) PFC or resonant converters where gate drive loss dominates over conduction loss.

Compared with STW20NK60Z, STW20NM65N offers 50 V higher blocking voltage and tighter R_DS(on) tolerance, while IPP65R190CFD7 trades reduced gate charge for higher output capacitance-making STW20NM65N optimal for 65–100 kHz industrial SMPS balancing conduction, switching, and ruggedness.

Availability

STW20NM65N is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, photovoltaic string inverters, and induction heating systems requiring stable component supply and long-term manufacturability assurance.

Supply support for STW20NM65N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STW20NM65N belongs to the MDmesh™ high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-power-density switching converters in industrial and renewable energy applications.

FAQ

What is the maximum continuous drain current for STW20NM65N at 100°C case temperature?

The maximum continuous drain current is 12 A at T_C = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limitations of the TO-247 package, where junction-to-case resistance (0.78 °C/W) and ambient conditions constrain safe operating area at elevated temperatures.

Does STW20NM65N have integrated gate protection?

No, STW20NM65N does not include integrated gate Zener protection. Its absolute maximum gate-source voltage is ±25 V, and designers must implement external gate clamping (e.g., 18 V TVS) to prevent damage from ringing or overshoot in high-dV/dt environments.

Can STW20NM65N be used in synchronous rectification topologies?

No-it is an N-channel high-side switch optimized for primary-side switching, not low-side synchronous rectification. Its body diode recovery characteristics (460 ns t_rr) and lack of optimized reverse conduction specs make it unsuitable as a controlled rectifier; dedicated SR controllers with logic-level FETs are recommended instead.

Is STW20NM65N compliant with RoHS and REACH regulations?

Yes, STW20NM65N is manufactured in ECOPACK® packaging with lead-free second-level interconnects, fully compliant with EU RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006, as confirmed in Section 4 of the official datasheet.

STW20NM65N Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 19A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 190mOhm @ 9.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 70 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 2500 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 160W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW20NM65N FAQ

1.How can I place an order for STW20NM65N through Aetrix?

Please submit a Request for Quotation (RFQ) for STW20NM65N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW20NM65N reliable?

The price and inventory of STW20NM65N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW20NM65N is usually 5 days.

3.What payment methods are accepted for STW20NM65N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW20NM65N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW20NM65N?

STW20NM65N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW20NM65N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW20NM65N?

For technical support, including STW20NM65N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW20NM65N requirements.

6.How does Aetrix verify that STW20NM65N is sourced from the original manufacturer or authorized distributors?

All STW20NM65N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW20NM65N meets industry standards.

7.What is the process for return or replacement of STW20NM65N?

All STW20NM65N units undergo pre-shipment inspection (PSI). If there is an issue with STW20NM65N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW20NM65N part is unused and in its original packaging.

Return procedure for STW20NM65N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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