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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW21N65M5

Name: STW21N65M5
Brand: STMicroelectronics
SKU: STW21N65M5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW21N65M5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW21N65M5.pdf

Description:: MOSFET N-CH 650V 17A TO247-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STW21N65M5 from STMicroelectronics is an N-channel 650 V, 17 A MDmesh™ V Power MOSFET in TO-247 package with R_DS(on) = 0.150 Ω (typ), 100% avalanche tested, and high dv/dt capability (15 V/ns). It delivers low conduction loss and excellent switching performance for high-efficiency hard-switched SMPS in industrial power supplies and solar inverters.

For engineers reviewing the STW21N65M5 datasheet, STW21N65M5 pinout, STW21N65M5 application, or STW21N65M5 equivalent, key selection criteria include its 650 V V_DSS, 0.150 Ω R_DS(on) at 10 V_GS, 125 W P_TOT, 150 °C T_j(max), and TO-247 thermal resistance (R_thj-case = 1.0 °C/W).

Technical Context

This device employs ST's MDmesh™ V vertical process combined with PowerMESH™ horizontal layout to achieve industry-leading R_DS(on) × area ratio. Its 650 V breakdown voltage (V_(BR)DSS ≥ 650 V) and 150 °C max junction temperature support robust operation in continuous high-voltage switching.

The MOSFET features fast switching with t_d(v) = 37 ns, t_r(v) = 10 ns, and low gate charge (Q_g = 50 nC), enabling high-frequency operation up to 100 kHz in PFC and LLC topologies. Its source-drain diode has t_rr = 294 ns (T_j = 25 °C) and Q_rr = 4 µC, reducing recovery losses in bridge configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - Withstands DC bus voltages up to 400 V RMS (e.g., 3-phase rectified input) with margin for transients.
R_DS(on)	0.150 Ω (typ) at V_GS = 10 V - Enables <1.3 W conduction loss at 17 A, critical for high-power density designs.
I_D (cont)	17 A at T_C = 25 °C - Supports full-load current in 1–2 kW converters without derating at heatsink-limited conditions.
P_TOT	125 W - Allows high-power operation with standard TO-247 heatsinking (R_thj-case = 1.0 °C/W).
dv/dt	15 V/ns - Resists false turn-on in noisy high-dV/dt environments such as motor drives and inverters.
E_AS	400 mJ - Withstands single-pulse inductive energy without failure, simplifying snubber design in flyback/LLC.
Q_g	50 nC - Reduces gate drive power requirement and enables use of lower-cost drivers in high-frequency PFC stages.

Pinout & Package

STW21N65M5 is housed in a TO-247 package with isolated tab (V_ISO = 2500 V RMS), optimized for high-voltage isolation and thermal dissipation. The case serves as the drain terminal, enabling direct mounting to heatsinks.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Source terminal (low-side reference)	Connected to power ground or low-side switch node; carries full load current and must be routed with low-inductance layout.
2 (Gate)	Control input	High-impedance MOS gate requiring <2.5 Ω intrinsic resistance; sensitive to ringing-requires local RC snubber or gate resistor.
3 (Drain)	High-voltage output / case	Internally connected to metal tab; electrically isolated at 2500 V RMS-must be mounted on insulated heatsink in grounded-chassis systems.

Key Features

Feature	Design Value
MDmesh™ V technology	Delivers lowest R_DS(on) × area among silicon 650 V MOSFETs, enabling smaller PCB footprints in space-constrained PSUs.
100% avalanche rated	Guarantees ruggedness under unclamped inductive switching (UIS), eliminating need for external clamping circuits in relay/snubberless designs.
High dv/dt immunity	15 V/ns rating prevents spurious turn-on during fast voltage transitions in half-bridge and three-phase inverter legs.
Low Q_gd/Q_g ratio	Q_gd = 23 nC / Q_g = 50 nC → 46% - Improves Miller immunity and reduces switching instability in high-side configurations.
Optimized body diode	t_rr = 294 ns and Q_rr = 4 µC at 25 °C - Minimizes reverse recovery loss and EMI in synchronous rectification and bridge applications.

Applications

Industrial Switch-Mode Power Supplies

Solar DC-DC Optimizers

Use Scenario: Primary-side switch in 1.5 kW telecom rectifier with universal AC input (90–264 VAC) and active PFC + LLC resonant stage.

IC Role / Device Role / Timing Role: High-voltage power switch operating at 100 kHz with zero-voltage switching (ZVS) in LLC half-bridge configuration.

Use Value: 0.150 Ω R_DS(on) reduces conduction loss by 22% vs. legacy 0.19 Ω devices, improving full-load efficiency from 94.2% to 94.8%.

Use Scenario: DC-DC boost converter in string-level solar optimizer handling up to 60 V input and 450 V output.

IC Role / Device Role / Timing Role: Main switching transistor in hard-switched boost topology with 50–75 kHz operation and 17 A peak current.

Use Value: 650 V V_DSS and 150 °C T_j(max) allow reliable operation under PV string overvoltage and desert ambient conditions (T_amb = 70 °C).

Motor Drive Inverters

UPS Output Stages

Use Scenario: Phase-leg switch in 3 kW HVAC inverter driving permanent magnet motor with field-oriented control.

IC Role / Device Role / Timing Role: Low-side switch in 3-phase IGBT/MOSFET hybrid inverter, commutating 15 A RMS at 8 kHz PWM.

Use Value: 15 V/ns dv/dt rating prevents false triggering during high-slew-rate phase transitions, eliminating shoot-through risk.

Use Scenario: Output H-bridge switch in online double-conversion UPS delivering clean 230 VAC sine wave from 48 VDC battery bank.

IC Role / Device Role / Timing Role: High-side and low-side switch in full-bridge inverter stage operating at 16 kHz SPWM with soft switching.

Use Value: 400 mJ E_AS withstands battery short-circuit transients without failure, extending system MTBF beyond 100,000 hours.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 650 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R019C7	R_DS(on) = 0.019 Ω (lower), but V_DSS = 650 V, Q_g = 72 nC (higher), TO-247 package.	Better conduction loss at >15 A, but higher gate drive loss and slower switching due to larger Q_g.	Select when priority is ultra-low R_DS(on) and thermal budget allows higher gate drive power.
IXTH17N65X2	R_DS(on) = 0.180 Ω (higher), V_DSS = 650 V, Q_g = 42 nC (lower), TO-247 package.	Lower switching loss and faster turn-off, but 20% higher conduction loss at full load.	Select when switching frequency exceeds 150 kHz and gate drive capability is limited.

Compared with STW21N65M5, IPW65R019C7 offers superior conduction efficiency but demands stronger gate drivers, while IXTH17N65X2 trades R_DS(on) for reduced switching loss-making STW21N65M5 the balanced choice for 50–100 kHz industrial SMPS where both conduction and switching losses matter.

Availability

STW21N65M5 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, solar DC-DC optimizers, and motor drive inverters requiring stable component supply and long-term lifecycle support.

Supply support for STW21N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.

STW21N65M5 belongs to the MDmesh™ V family-engineered specifically for high-efficiency, high-voltage power conversion in industrial SMPS, solar inverters, and UPS systems where low R_DS(on) and avalanche ruggedness are critical.

FAQ

What is the maximum continuous drain current for STW21N65M5 at 100 °C case temperature?

The maximum continuous drain current (I_D) is 10.7 A at T_C = 100 °C, as specified in Table 2 of the datasheet. This reflects thermal derating due to junction-to-case thermal resistance (R_thj-case = 1.0 °C/W) and maximum junction temperature limit of 150 °C.

Does STW21N65M5 require a negative gate voltage for reliable turn-off in high-noise environments?

No. STW21N65M5 has a gate threshold voltage (V_GS(th)) of 3–5 V and is fully enhanced at V_GS = 10 V. While a negative turn-off bias (e.g., –5 V) improves noise immunity, it is not required-the device remains reliably off with V_GS ≤ 0 V per absolute maximum ratings (V_GS = ±25 V).

Can STW21N65M5 replace STP21N65M5 in an existing TO-220-based design?

No-STW21N65M5 uses TO-247 packaging with different pin spacing, thermal interface, and mechanical footprint. Direct replacement requires PCB redesign, heatsink re-machining, and verification of gate drive loop inductance due to higher peak currents enabled by lower R_DS(on).

Is the source-drain diode in STW21N65M5 suitable for synchronous rectification?

No. The body diode has t_rr = 294 ns and Q_rr = 4 µC at 25 °C-too slow and lossy for synchronous rectification above 50 kHz. It is intended for freewheeling and clamping only; external Schottky or SiC diodes are recommended for SR applications.

STW21N65M5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ V

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 190mOhm @ 8.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 50 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1950 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW21N65M5 FAQ

1.How can I place an order for STW21N65M5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STW21N65M5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW21N65M5 reliable?

The price and inventory of STW21N65M5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW21N65M5 is usually 5 days.

3.What payment methods are accepted for STW21N65M5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW21N65M5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW21N65M5?

STW21N65M5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW21N65M5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW21N65M5?

For technical support, including STW21N65M5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW21N65M5 requirements.

6.How does Aetrix verify that STW21N65M5 is sourced from the original manufacturer or authorized distributors?

All STW21N65M5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW21N65M5 meets industry standards.

7.What is the process for return or replacement of STW21N65M5?

All STW21N65M5 units undergo pre-shipment inspection (PSI). If there is an issue with STW21N65M5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW21N65M5 part is unused and in its original packaging.

Return procedure for STW21N65M5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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