STMicroelectronics STW21N90K5

Overview

STW21N90K5 from STMicroelectronics is a high-voltage N-channel Power MOSFET using MDmesh K5 technology, rated for 900 V V_DS, 250 mΩ typ. R_DS(on) at V_GS = 10 V and 9 A, with 43 nC total gate charge and 100% avalanche tested. It serves as a primary switching device in high-efficiency HV DC-DC converters and industrial SMPS.

For engineers reviewing the STW21N90K5 datasheet, STW21N90K5 pinout, STW21N90K5 application, or STW21N90K5 equivalent, this page delivers verified electrical specs, TO-247 package layout, thermal resistance (R_thJC = 0.5 °C/W), avalanche energy (E_AS = 200 mJ), and real-world switching timing (t_d(off) = 52 ns).

Technical Context

This MOSFET employs ST's proprietary vertical MDmesh K5 structure to achieve ultra-low figure of merit (FoM) and gate charge-enabling high-frequency operation above 100 kHz while maintaining low conduction and switching losses. Its Zener-protected gate ensures robustness against overvoltage transients during hard-switching.

The device features a fast-recovery body diode (t_rr = 548 ns at T_J = 25 °C) and is characterized for unclamped inductive switching up to 6 A repetitive avalanche current. Safe operating area (SOA) is validated for single-pulse operation up to 10 ms at V_DS = 100 V and I_D = 10 A.

Key Specifications

Pinout & Package

STW21N90K5 is housed in a TO-247 package with isolated tab (drain-connected), offering high thermal performance and mechanical robustness for industrial power modules.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage switching applications.

Compared with IXTH20N90L2 and IPP60R190C7, STW21N90K5 uniquely balances 900 V capability, 250 mΩ on-resistance, and 43 nC gate charge-making it optimal for 800 V-class industrial and renewable energy converters where both voltage headroom and thermal efficiency are critical.

Availability

STW21N90K5 is available at Aetrix Electronics and suitable for industrial SMPS, solar inverter DC-link stages, and EV onboard charger designs requiring stable component supply across multi-year production cycles.

Supply support for STW21N90K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STW21N90K5 belongs to the MDmesh K5 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-power-density switching applications in renewable energy, industrial power supplies, and EV infrastructure.

FAQ

What is the maximum continuous drain current for STW21N90K5 at 100 °C case temperature?

The maximum continuous drain current is 11.6 A when the case temperature (T_C) is maintained at 100 °C, as specified in Table 1 of DS6585 Rev 7. This rating accounts for thermal derating due to junction-to-case thermal resistance (0.5 °C/W) and maximum allowable junction temperature (150 °C).

Does STW21N90K5 include integrated gate protection?

Yes-STW21N90K5 integrates a Zener diode between gate and source, clamping gate-source voltage to ±30 V. This eliminates the need for external gate protection components in typical gate driver circuits, improving reliability and reducing bill-of-materials count.

Can STW21N90K5 replace STP21N90K5 in an existing TO-220 design?

No-STW21N90K5 uses a TO-247 package with different pin spacing, mounting hole pattern, and thermal interface (isolated tab). Direct replacement would require PCB layout revision, heatsink retooling, and verification of creepage/clearance distances due to higher voltage standoff requirements.

What is the safe operating area (SOA) limitation at 100 µs pulse width?

At 100 µs pulse width and T_C = 25 °C, the SOA is limited by R_DS(on) to approximately 10 A at 100 V V_DS, per Figure 5 in DS6585 Rev 7. This reflects the device's ability to sustain short-duration high-power pulses without thermal runaway or secondary breakdown.