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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW21NM60N

Name: STW21NM60N
Brand: STMicroelectronics
SKU: STW21NM60N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW21NM60N

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW21NM60N.pdf

Description:: MOSFET N-CH 600V 17A TO247-3

Quantity:: RFQ Add To RFQ list

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Inventory:8,194

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Product details

Overview

STW21NM60N from STMicroelectronics is a 600 V, 17 A N-channel enhancement-mode Power MOSFET in TO-247 package, featuring 0.17 Ω R_DS(on) max at V_GS = 10 V, 100% avalanche tested, and optimized for high-efficiency switching converters in industrial SMPS and PFC stages.

For engineers reviewing the STW21NM60N datasheet, STW21NM60N pinout, STW21NM60N application, or STW21NM60N equivalent, key selection criteria include its 600 V blocking voltage, low gate charge (66 nC), fast switching (t_d(off) = 84 ns), and thermal resistance of 0.89 °C/W (j-case), critical for high-power density designs.

Technical Context

This second-generation MDmesh™ MOSFET integrates a proprietary vertical structure with strip layout to minimize conduction and switching losses simultaneously. Its 600 V V_DSS, 0.17 Ω R_DS(on), and 66 nC total gate charge enable high-frequency operation up to 100 kHz in hard-switched topologies.

The device includes an integrated body diode with 372 ns reverse recovery time (T_j = 25 °C) and 4.6 µC Q_rr, supporting resonant and quasi-resonant converter designs. Its 150 °C maximum junction temperature and 2500 V RMS insulation withstand voltage support robust operation in isolated power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - supports 400 V DC bus with ≥50% safety margin in industrial SMPS
R_DS(on) max	0.22 Ω - ensures ≤6.3 W conduction loss at 17 A continuous drain current
Q_g	66 nC - enables efficient gate drive with standard 1 A peak drivers at 100 kHz
E_AS	610 mJ - provides unclamped inductive switching robustness without external snubbers
R_th(j-case)	0.89 °C/W - allows 140 W dissipation with ≤125 °C case-to-ambient delta under heatsink
t_r/t_f	15 ns / 31 ns - minimizes switching transition losses in ZVS/ZCS circuits
I_D (T_C = 100 °C)	10 A - defines usable current derating for sustained operation in enclosed enclosures

Pinout & Package

STW21NM60N uses a 3-pin TO-247 package with isolated mounting flange. Pin 1 = Gate, Pin 2 = Drain (tab-connected), Pin 3 = Source. The metal tab is electrically connected to the Drain terminal and must be insulated from heatsink unless circuit topology requires common-drain configuration.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	High-impedance MOS gate requiring <2 Ω series resistance to suppress ringing during fast switching
Pin 2 (Drain)	High-voltage power node	Internally bonded to metal tab; must be electrically isolated from heatsink unless used as common-drain return
Pin 3 (Source)	Reference return path	Serves as local ground reference for gate driver; requires low-inductance PCB routing to minimize dv/dt coupling

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse energy handling up to 610 mJ without parameter shift or failure
Low gate charge (66 nC)	Reduces gate driver power loss and enables higher PWM frequencies with minimal driver heating
Low input capacitance (1900 pF C_iss)	Minimizes Miller effect-induced shoot-through risk in half-bridge configurations
MDmesh™ second-generation structure	Delivers 30% lower R_DS(on) × Q_g figure-of-merit vs. first-gen 600 V MOSFETs
ECOPACK® RoHS-compliant	Lead-free second-level interconnect meets JEDEC JESD97 and EU RoHS Directive 2011/65/EU

Applications

Industrial Switch-Mode Power Supplies

Active PFC Front-Ends

Use Scenario: 3 kW telecom rectifier with continuous conduction mode (CCM) boost PFC stage.

IC Role / Device Role / Timing Role: Main switching device in boost converter power stage, operating at 65–100 kHz with 17 A peak inductor current.

Use Value: 0.17 Ω R_DS(on) limits conduction loss to <6 W; 66 nC Q_g enables efficient gate drive with UCC27324 driver.

Use Scenario: 2.5 kW server PSU with interleaved dual-phase active PFC.

IC Role / Device Role / Timing Role: High-side switch in each phase leg, synchronized to 100 kHz PWM with zero-voltage switching assist.

Use Value: 372 ns t_rr and 4.6 µC Q_rr reduce diode recovery loss and EMI generation during commutation.

Uninterruptible Power Supplies

Motor Drive Inverters

Use Scenario: Online double-conversion UPS output inverter stage delivering 5 kVA sinusoidal output.

IC Role / Device Role / Timing Role: Low-side switch in three-phase IGBT/MOSFET hybrid inverter bridge, handling 17 A RMS load current.

Use Value: 150 °C T_j(max) and 0.89 °C/W R_th(j-case) sustain thermal stability during overload transients without derating.

Use Scenario: 7.5 kW HVAC compressor inverter with field-oriented control (FOC).

IC Role / Device Role / Timing Role: Phase-leg high-side switch in 3-phase bridge, switching at 8–16 kHz with 10 A continuous current.

Use Value: 600 V V_DSS accommodates 400 V DC link with 100 V switching overshoot margin; avalanche rating prevents failure during motor stall events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R190C6	650 V, 0.19 Ω R_DS(on), 48 nC Q_g, TO-220FP package	Lower gate charge but higher on-resistance and smaller package thermal capability (R_th(j-case) = 4.21 °C/W)	Preferred for space-constrained, lower-power (<1 kW) designs where gate drive efficiency outweighs conduction loss
STW20NK60Z	600 V, 0.22 Ω R_DS(on), 75 nC Q_g, same TO-247 package	Higher gate charge and slightly higher R_DS(on); older Zener-protected SuperMESH™ architecture	Selected when enhanced avalanche ruggedness (E_AS = 1100 mJ) is prioritized over switching speed

Compared with IPP60R190C6 and STW20NK60Z, STW21NM60N delivers optimal balance of low R_DS(on), moderate Q_g, and superior thermal performance in TO-247-making it ideal for 1–5 kW industrial converters where both conduction and switching losses must be minimized.

Availability

STW21NM60N is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, active PFC front-ends, and uninterruptible power systems requiring stable component supply and long-term production continuity.

Supply support for STW21NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and consumer markets.

STW21NM60N belongs to the MDmesh™ second-generation high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-frequency AC-DC and DC-DC conversion in industrial power systems.

FAQ

What is the maximum continuous drain current for STW21NM60N at 100 °C case temperature?

The maximum continuous drain current is 10 A at T_C = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limits-not silicon capability-and assumes adequate heatsinking to maintain case temperature at or below 100 °C under steady-state operation.

Does STW21NM60N have an integrated body diode, and what are its key recovery parameters?

Yes, it features an integrated fast-recovery body diode with reverse recovery time (t_rr) of 372 ns and reverse recovery charge (Q_rr) of 4.6 µC at T_j = 25 °C, ISD = 17 A, VDD = 100 V, and di/dt = 100 A/µs. These values increase to 486 ns and 6.3 µC at T_j = 150 °C.

Is STW21NM60N suitable for use in hard-switched LLC resonant converters?

No-it is not recommended for primary-side switches in LLC converters due to its relatively high Q_g (66 nC) and C_oss (110 pF), which impede zero-voltage switching at high frequencies. It is better suited for hard-switched PFC and PSFB topologies where its low R_DS(on) and avalanche rating provide clear advantage.

What is the gate threshold voltage range, and how does it affect gate drive design?

V_GS(th) is specified from 2 V (min) to 4 V (max) at I_D = 250 µA. This wide range necessitates gate drive voltages ≥10 V to ensure full enhancement across process and temperature variation; using 12–15 V improves noise immunity and reduces R_DS(on) dispersion in parallel configurations.

STW21NM60N Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 220mOhm @ 8.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 66 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1900 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW21NM60N FAQ

1.How can I place an order for STW21NM60N through Aetrix?

Please submit a Request for Quotation (RFQ) for STW21NM60N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW21NM60N reliable?

The price and inventory of STW21NM60N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW21NM60N is usually 5 days.

3.What payment methods are accepted for STW21NM60N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW21NM60N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW21NM60N?

STW21NM60N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW21NM60N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW21NM60N?

For technical support, including STW21NM60N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW21NM60N requirements.

6.How does Aetrix verify that STW21NM60N is sourced from the original manufacturer or authorized distributors?

All STW21NM60N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW21NM60N meets industry standards.

7.What is the process for return or replacement of STW21NM60N?

All STW21NM60N units undergo pre-shipment inspection (PSI). If there is an issue with STW21NM60N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW21NM60N part is unused and in its original packaging.

Return procedure for STW21NM60N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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