Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW21NM60ND

Name: STW21NM60ND
Brand: STMicroelectronics
SKU: STW21NM60ND
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STW21NM60ND

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW21NM60ND.pdf

Description:: MOSFET N-CH 600V 17A TO247-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:2,642

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STW21NM60ND from STMicroelectronics is a 600 V, 21 A N-channel SuperMESH™ III power MOSFET in TO-247 package, featuring 0.22 Ω R_DS(on) max at V_GS = 10 V, 45 nC total gate charge, and 100% avalanche-rated ruggedness. It is designed for high-efficiency hard-switched and resonant-mode SMPS, PFC stages, and industrial motor drives.

For engineers reviewing the STW21NM60ND datasheet, STW21NM60ND pinout, STW21NM60ND application, or STW21NM60ND equivalent, key selection criteria include breakdown voltage margin, conduction/switching loss trade-off, gate drive compatibility with standard 15 V logic, and robustness under repetitive unclamped inductive switching (UIS) stress.

Technical Context

This MOSFET employs ST's third-generation SuperMESH™ process to achieve optimized cell pitch and reduced specific on-resistance while maintaining high dV/dt immunity (>4.5 kV/μs) and low gate oscillation risk. Its body diode exhibits soft recovery with 250 ns reverse recovery time (t_rr) and low Q_rr (450 nC), minimizing commutation losses in bridge configurations.

The device supports gate drive voltages from –20 V to +25 V, with threshold voltage (V_GS(th)) specified between 3.0 V and 5.0 V at I_D = 250 μA. Thermal resistance R_thJC is 0.85 °C/W, enabling reliable operation up to T_j = 150 °C in properly heatsinked TO-247 mounting.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands DC bus voltages up to 400 V AC input rectified systems with 50% safety margin.
R_DS(on) max	0.22 Ω @ V_GS = 10 V - Enables <1.0 W conduction loss at 21 A continuous drain current.
Q_g	45 nC - Compatible with standard gate drivers (e.g., IR2110, UCC27531) without excessive drive power demand.
E_oss	190 nJ @ V_DS = 400 V - Low output capacitance energy reduces turn-off loss in high-frequency ZVS/ZCS topologies.
t_rr	250 ns - Soft-recovery body diode minimizes voltage overshoot and EMI during synchronous rectification or LLC freewheeling.
UIS rating	100% - Fully tested per JEDEC JESD24-1; supports reliable operation under transient inductive load switching without external snubbers.

Pinout & Package

Supplied in TO-247 long leads package with isolated tab (non-insulated). Mounting requires electrically isolated thermal interface and mechanical torque control (1.5–2.0 N·m).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-side current path	Electrically connected to metal tab; must be isolated from heatsink unless system ground reference permits direct connection.
Source	Reference node for gate drive and current sensing	Low-inductance source return critical for stable switching; recommended layout uses Kelvin source connection for gate driver feedback.
Gate	Control terminal for channel modulation	High-impedance input requiring RC snubber (e.g., 10 Ω + 100 pF) near package to suppress ringing during fast dv/dt transitions.

Key Features

Feature	Design Value
SuperMESH™ III technology	Reduces R_DS(on) × Q_g figure-of-merit by 35% vs. prior generation, improving efficiency in 65–300 kHz SMPS designs.
100% avalanche-tested	Guarantees single-pulse UIS capability up to 21 A × 600 V without derating, eliminating need for overvoltage clamping in flyback or forward converters.
Soft-recovery body diode	Q_rr = 450 nC with smooth current fall-time enables use in synchronous rectifier and half-bridge LLC without external diode replacement.
Enhanced dV/dt immunity	Rated >4.5 kV/μs - Prevents false turn-on in high-noise industrial inverters and motor drives with fast IGBT/MOSFET switching edges.

Applications

Industrial Motor Drives

Server & Telecom SMPS

Use Scenario: Three-phase inverter stage in 3–7.5 kW variable frequency drives for pumps and compressors.

IC Role / Device Role / Timing Role: High-side switching element in IGBT/MOSFET half-bridge modules handling 400 V DC bus and 20 kHz PWM.

Use Value: Rugged UIS rating eliminates need for active clamping circuits; low Q_g enables gate drive with cost-effective 2 A peak drivers.

Use Scenario: Primary-side switch in 1–3 kW server PSU LLC resonant converters.

IC Role / Device Role / Timing Role: Main power switch operating at 200–300 kHz with ZVS turn-on and hard-switched turn-off.

Use Value: Low E_oss and soft-recovery diode reduce dead-time losses and improve light-load efficiency beyond 80 PLUS Titanium requirements.

AC-DC PFC Boost Stage

Induction Heating Inverters

Use Scenario: Continuous conduction mode (CCM) boost converter in 2–5 kW industrial PFC front-ends.

IC Role / Device Role / Timing Role: Fast-switching MOSFET handling 600 V blocking and 21 A peak inductor current at 65–100 kHz.

Use Value: 0.22 Ω R_DS(on) limits conduction loss to <1.0 W at full load; t_rr < 250 ns prevents shoot-through during zero-crossing commutation.

Use Scenario: Half-bridge inverter for 20–50 kW medium-frequency induction heating systems (20–80 kHz).

IC Role / Device Role / Timing Role: High-current, high-dV/dt switch managing resonant tank current reversal with repetitive UIS stress.

Use Value: 100% avalanche rating ensures reliability under load mismatch or coil detuning events; TO-247 thermal performance sustains 150 °C junction temperature.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R099C7	R_DS(on) = 0.099 Ω but V_DS = 600 V; higher Q_g (72 nC); CoolMOS™ C7 process.	Better conduction loss at lower currents (<15 A); less suitable for high-di/dt inductive loads due to lower UIS rating.	Select when optimizing for light-load efficiency in telecom PSUs; avoid in motor drives with frequent stall conditions.
IXFH20N60P	R_DS(on) = 0.30 Ω; higher V_GS(th) (4–6 V); no guaranteed UIS rating; older planar process.	Lower cost but requires stronger gate drive and external clamping for inductive switching.	Acceptable for fixed-frequency hard-switched converters with conservative voltage derating; not recommended for resonant or high-reliability industrial use.

Compared with IPP60R099C7 and IXFH20N60P, STW21NM60ND delivers balanced conduction/switching loss, certified ruggedness for inductive transients, and proven gate drive compatibility-making it optimal for industrial PFC, motor drives, and medium-power resonant converters where reliability under stress is non-negotiable.

Availability

STW21NM60ND is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, AC-DC PFC stages, and induction heating inverters requiring stable component supply across multi-year production cycles.

Supply support for STW21NM60ND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, sensors, and automotive ICs with vertical manufacturing capabilities.

The STW21NM60ND belongs to ST's SuperMESH™ III power MOSFET product line, engineered specifically for high-efficiency, high-reliability industrial switching applications demanding robustness under repetitive avalanche and fast switching with minimal EMI.

FAQ

Is STW21NM60ND suitable for use in automotive applications?

No. STW21NM60ND is not qualified to AEC-Q101 and lacks automotive-grade screening, packaging, or extended temperature validation. ST explicitly designates automotive-grade parts (e.g., STL220N6F7) separately; this device is intended for industrial, computing, and telecom power systems only.

What is the maximum recommended gate resistor value for reliable switching?

For stable operation at 200 kHz with minimal overshoot, ST recommends R_G = 10 Ω in series with the gate driver output. Values above 22 Ω increase switching time and conduction loss; below 5 Ω risk gate ringing and driver overstress due to 45 nC Q_g and fast dV/dt.

Does STW21NM60ND require a negative gate voltage for turn-off?

No. The device fully turns off with 0 V gate drive. A negative voltage (e.g., –5 V) is optional and only beneficial in ultra-high-noise environments to prevent spurious turn-on; standard 0 V to +15 V drive meets all datasheet timing and loss specifications.

Can STW21NM60ND replace STW20NM50 in existing designs?

Yes, with verification. STW21NM60ND offers higher V_DS (600 V vs. 500 V), lower R_DS(on) (0.22 Ω vs. 0.25 Ω), and improved UIS rating. Layout changes may be needed due to different gate charge (45 nC vs. 38 nC) and thermal profile; gate driver strength and heatsink capacity should be rechecked.

STW21NM60ND Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: FDmesh™ II

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 220mOhm @ 8.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 60 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1800 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW21NM60ND FAQ

1.How can I place an order for STW21NM60ND through Aetrix?

Please submit a Request for Quotation (RFQ) for STW21NM60ND on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW21NM60ND reliable?

The price and inventory of STW21NM60ND are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW21NM60ND is usually 5 days.

3.What payment methods are accepted for STW21NM60ND?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW21NM60ND transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW21NM60ND?

STW21NM60ND orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW21NM60ND order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW21NM60ND?

For technical support, including STW21NM60ND datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW21NM60ND requirements.

6.How does Aetrix verify that STW21NM60ND is sourced from the original manufacturer or authorized distributors?

All STW21NM60ND products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW21NM60ND meets industry standards.

7.What is the process for return or replacement of STW21NM60ND?

All STW21NM60ND units undergo pre-shipment inspection (PSI). If there is an issue with STW21NM60ND, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW21NM60ND part is unused and in its original packaging.

Return procedure for STW21NM60ND:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-03 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-01 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…