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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW220NF75

Name: STW220NF75
Brand: STMicroelectronics
SKU: STW220NF75
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW220NF75

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW220NF75.pdf

Description:: MOSFET N-CH 75V 120A TO247-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STW220NF75 from STMicroelectronics is an N-channel enhancement-mode power MOSFET in TO-247 package, rated for 75 V V_DS, 120 A continuous drain current at T_C = 25 °C, and typ. R_DS(on) = 4.0 mΩ at V_GS = 10 V. It features 100% avalanche tested ruggedness, standard threshold drive (V_GS(th) = 2–4 V), and is optimized for high-current, high-speed switching in automotive 42 V battery systems and OR-ing applications.

For engineers reviewing the STW220NF75 datasheet, STW220NF75 pinout, STW220NF75 application, or STW220NF75 equivalent, key selection criteria include its low on-resistance, high pulsed current capability (I_DM = 480 A), diode recovery performance (t_rr = 140 ns, Q_rr = 770 nC), thermal resistance (R_thj-case = 0.30 °C/W), and avalanche energy rating (E_AS = 2500 mJ).

Technical Context

This MOSFET employs ST's STripFET™ II process with single-feature-size strip geometry, enabling high cell density and low R_DS(on). Its gate charge profile (Q_g = 350 nC typ., Q_gd = 135 nC) supports fast switching with controlled dv/dt (10 V/ns max) and robust unclamped inductive switching behavior.

The integrated body diode exhibits fast reverse recovery (t_rr = 140 ns, I_RRM = 11 A) under high di/dt (100 A/µs) and elevated junction temperature (T_j = 150 °C), making it suitable for synchronous rectification and bidirectional current handling in DC-DC converters and motor control H-bridges.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	75 V - Maximum blocking voltage before avalanche onset; supports 42 V automotive bus with >75 % margin.
R_DS(on)	4.0 mΩ typ. @ V_GS = 10 V, I_D = 60 A - Enables <1 W conduction loss at 120 A, critical for high-efficiency power stages.
I_D cont.	120 A @ T_C = 25 °C - Package-limited current; sustained operation requires heatsinking to maintain T_j ≤ 175 °C.
E_AS	2500 mJ - Single-pulse avalanche energy rating confirms ruggedness against inductive turn-off transients without external snubbers.
t_rr / Q_rr	140 ns / 770 nC - Fast, low-charge body diode recovery reduces switching losses and EMI in hard-switched topologies.
R_thj-case	0.30 °C/W - Low thermal resistance enables high power dissipation (500 W @ T_C = 25 °C) with minimal case-to-junction temperature rise.
Q_g	350 nC - Total gate charge determines driver strength requirement; compatible with standard 1–2 A peak gate drivers.

Pinout & Package

STW220NF75 is housed in a through-hole TO-247 package with three terminals: Drain (tab), Source (pin 1), and Gate (pin 2). The metal tab is electrically connected to the Drain, requiring isolation when mounted to heatsinks.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-side current path and heat sink interface	Electrically tied to package tab; must be insulated from chassis unless circuit topology requires common-drain configuration.
Source (Pin 1)	Reference node for gate drive and current return path	Serves as local ground reference for gate driver; layout must minimize inductance to avoid spurious turn-on during dV/dt events.
Gate (Pin 2)	Control terminal for channel modulation	High-impedance input requiring low-inductance gate loop; typical V_GS(th) of 2–4 V ensures compatibility with 5 V and 12 V logic-level drivers.

Key Features

Feature	Design Value
STripFET™ II process architecture	Enables 4.0 mΩ R_DS(on) in TO-247 without die size compromise, improving power density over prior-generation MOSFETs.
100% Unclamped Inductive Switching (UIS) tested	Guarantees minimum 2500 mJ single-pulse avalanche energy, eliminating need for design margining in inductive load circuits.
Fast body diode with soft recovery	t_rr = 140 ns and Q_rr = 770 nC reduce voltage overshoot and oscillation during freewheeling, easing EMI filter design.
Standard gate threshold (2–4 V)	Ensures reliable turn-on with industry-standard 5 V and 12 V gate drivers without level-shifting circuitry.
TO-247 mechanical robustness	Supports high-current PCB mounting and direct heatsink attachment with proven thermal cycling reliability in automotive under-hood environments.

Applications

Automotive 42 V Power Distribution

OR-ing Diode Replacement

Use Scenario: High-side main power switch in dual-battery 42 V start-stop systems, managing load dump and jump-start transients.

IC Role / Device Role / Timing Role: Power MOSFET acting as controlled high-current switch; replaces mechanical relay with µs-level response and no contact wear.

Use Value: 75 V rating provides 75 % headroom above nominal 42 V bus, while 2500 mJ E_AS withstands ISO 7637-2 pulse 5a without failure.

Use Scenario: Parallel power supply redundancy in telecom rectifier modules, where two 48 V inputs feed a common output bus.

IC Role / Device Role / Timing Role: Active OR-ing switch replacing Schottky diodes; conducts forward current and blocks reverse current with near-zero forward drop.

Use Value: 4.0 mΩ R_DS(on) cuts conduction loss by >90 % vs. 0.45 V Schottky, reducing heat sink size and improving system efficiency at 100+ A loads.

Industrial Motor Drive Half-Bridge

High-Current DC-DC Converter Primary Switch

Use Scenario: Low-side switch in 3-phase inverter driving 10 kW permanent magnet motors in HVAC compressors.

IC Role / Device Role / Timing Role: Synchronous rectifier and PWM-controlled power switch; handles 120 A peak phase current with fast turn-off (t_f = 130 ns).

Use Value: Low Q_gd/Q_g ratio (0.39) improves Miller immunity, enabling stable 20 kHz PWM operation without gate oscillation.

Use Scenario: Primary-side switch in isolated 3 kW LLC resonant converter for server PSU applications.

IC Role / Device Role / Timing Role: Hard-switched high-side switch operating at 300–500 kHz with zero-voltage switching assistance.

Use Value: 10 V/ns dv/dt rating and 140 ns t_rr suppress false triggering and reduce dead-time losses, improving light-load efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXFH120N075	R_DS(on) = 5.0 mΩ (typ.), Q_g = 320 nC, E_AS = 1900 mJ	Lower avalanche robustness; requires tighter SOA derating in inductive switching	Preferred where gate drive current is constrained and avalanche stress is minimal.
IPP120N06S4-03	V_DS = 60 V, R_DS(on) = 3.0 mΩ (typ.), Q_g = 280 nC	Not rated for 42 V automotive systems due to lower V_DS; unsuitable for load dump survival	Optimal for 24 V industrial supplies where lower R_DS(on) and gate charge outweigh voltage margin needs.

Compared with IXFH120N075 and IPP120N06S4-03, STW220NF75 uniquely balances 75 V rating, 4.0 mΩ on-resistance, and 2500 mJ avalanche capability-making it the only option qualified for demanding 42 V automotive power distribution with unclamped inductive stress.

Availability

STW220NF75 is available at Aetrix Electronics and suitable for automotive power distribution, OR-ing diode replacement, and industrial motor drive applications requiring stable component supply and long-term lifecycle support.

Supply support for STW220NF75 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs and discrete devices for automotive, industrial, and consumer markets.

STW220NF75 belongs to ST's STripFET™ II power MOSFET product line, engineered specifically for high-current, high-reliability switching in automotive 42 V architectures and industrial power conversion where avalanche ruggedness and thermal performance are critical.

FAQ

Is STW220NF75 suitable for surface-mount assembly?

No. STW220NF75 uses a through-hole TO-247 package with a metal tab designed for screw-mount heatsinking. It is not compatible with reflow or wave soldering processes and requires mechanical mounting with insulating hardware and thermal paste for optimal thermal transfer.

What is the maximum safe operating temperature for continuous operation?

The maximum junction temperature is 175 °C, and the storage temperature range is –55 to +175 °C. For continuous 120 A operation, the case temperature must be maintained ≤25 °C using a heatsink with thermal resistance ≤0.30 °C/W; derating applies above 25 °C at 3.33 W/°C.

Does STW220NF75 have a built-in ESD protection diode on the gate?

No. STW220NF75 does not integrate gate ESD protection. Its gate oxide is rated for ±20 V absolute maximum V_GS; external gate resistors (≥10 Ω) and transient voltage suppressors are recommended in high-noise environments to prevent electrostatic damage during handling and PCB assembly.

Can STW220NF75 replace STW20NK50Z in a 500 W SMPS design?

No. STW20NK50Z is a 500 V, 20 A Zener-protected superjunction MOSFET intended for high-voltage flyback converters. STW220NF75 is a 75 V, 120 A trench MOSFET optimized for low-voltage, high-current applications-its V_DS rating is insufficient for 500 V primary-side operation and lacks integrated Zener clamping.

STW220NF75 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ II

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.4mOhm @ 60A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 430 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 12500 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 500W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW220NF75 FAQ

1.How can I place an order for STW220NF75 through Aetrix?

Please submit a Request for Quotation (RFQ) for STW220NF75 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW220NF75 reliable?

The price and inventory of STW220NF75 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW220NF75 is usually 5 days.

3.What payment methods are accepted for STW220NF75?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW220NF75 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW220NF75?

STW220NF75 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW220NF75 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW220NF75?

For technical support, including STW220NF75 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW220NF75 requirements.

6.How does Aetrix verify that STW220NF75 is sourced from the original manufacturer or authorized distributors?

All STW220NF75 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW220NF75 meets industry standards.

7.What is the process for return or replacement of STW220NF75?

All STW220NF75 units undergo pre-shipment inspection (PSI). If there is an issue with STW220NF75, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW220NF75 part is unused and in its original packaging.

Return procedure for STW220NF75:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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