STMicroelectronics STW22N95K5

Overview

STW22N95K5 from STMicroelectronics is an AEC-Q101 qualified N-channel 950 V power MOSFET in TO-247 package, featuring 330 mΩ max R_DS(on), 17.5 A continuous drain current at 25 °C, and ultra-low 48 nC total gate charge. It delivers high-voltage switching for industrial motor drives and EV onboard chargers where avalanche ruggedness and Zener gate protection are critical.

For engineers reviewing the STW22N95K5 datasheet, STW22N95K5 pinout, STW22N95K5 application, or STW22N95K5 equivalent, key selection criteria include 950 V breakdown voltage, 100% avalanche tested performance, 280 mΩ typical on-resistance, 50 V/ns dv/dt ruggedness, and MDmesh K5 technology's FoM advantage in high-density SMPS designs.

Technical Context

This device uses ST's MDmesh K5 vertical superjunction architecture to achieve simultaneous reduction in R_DS(on) and gate charge-enabling high-efficiency operation in hard-switched PFC and resonant LLC topologies. Its 150 °C maximum junction temperature and 0.5 °C/W R_thJC support thermally constrained layouts.

The integrated Zener-protected gate structure withstands ±30 V transient stress, while its 200 mJ single-pulse avalanche energy (E_AS) and 6 A repetitive avalanche current ensure robustness under unclamped inductive switching-critical for flyback and forward converter primary-side switches.

Key Specifications

Pinout & Package

TO-247 package with isolated tab (Drain), standard 3-pin configuration. Mounting surface is electrically connected to Drain terminal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IXTH20N90L2 and IPP60R099C7, STW22N95K5 uniquely balances 950 V capability, 330 mΩ conduction resistance, and 48 nC gate charge-making it the only drop-in solution for 800 V DC-link industrial and EV charging applications requiring single-device high-voltage switching without series configuration.

Availability

STW22N95K5 is available at Aetrix Electronics and suitable for industrial motor drives, EV onboard chargers, telecom rectifiers, and high-voltage SMPS requiring stable component supply across multi-year production cycles.

Supply support for STW22N95K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

This device belongs to ST's MDmesh K5 high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-power-density switching in 600–1000 V applications such as server PSUs, solar inverters, and EV infrastructure.

FAQ

What is the maximum recommended gate-source voltage for STW22N95K5?

The absolute maximum V_GS is ±30 V, but ST specifies 10 V as the optimal gate drive voltage for full enhancement with minimal overshoot. Operation above 15 V increases gate oxide stress without improving R_DS(on); below 4.5 V risks incomplete turn-on and excessive conduction loss. The integrated Zener protection clamps transients beyond ±30 V, preserving gate integrity during ESD or layout-induced spikes.

Does STW22N95K5 require a negative gate voltage for reliable turn-off?

No. STW22N95K5 has a positive-threshold design with V_GS(th) of 3–5 V and does not require negative gate bias for safe turn-off. However, applying –5 V during off-state improves noise immunity in high-dv/dt environments and reduces Miller-induced false turn-on risk. Standard 0 V gate return is sufficient for most industrial applications per datasheet Figure 19 waveforms.

How is the 100% avalanche test performed during production?

Each STW22N95K5 undergoes a single-pulse unclamped inductive test at TC = 25 °C with V_DD = 50 V, I_D = 6 A, and L = 100 µH. The device must sustain the resulting E_AS ≥200 mJ without parameter shift exceeding limits in Table 4. This screen occurs after final test and is documented in ST's AEC-Q101 qualification report DS9882 Rev 5 Section 3.2, ensuring every shipped unit meets minimum avalanche capability.

Can STW22N95K5 be used in synchronous rectification topologies?

No-it is an N-channel high-voltage MOSFET optimized for high-side or low-side switching, not synchronous rectification. Its body diode exhibits 1.5 V forward voltage and 513 ns reverse recovery time at 17.5 A, making it unsuitable for high-frequency freewheeling. For synchronous rectification in 950 V systems, discrete Schottky diodes or dedicated SR controllers with logic-level FETs are required instead.