STMicroelectronics STW22NM60N

Overview

STW22NM60N from STMicroelectronics is an N-channel 600 V, 200 mΩ typ. (220 mΩ max), 16 A MDmesh™ II Power MOSFET in TO-220FP package, optimized for high-efficiency hard-switched and resonant SMPS topologies including PFC and LLC converters. It features 100% avalanche tested ruggedness, low gate charge (44 nC), and low input capacitance (1330 pF), enabling fast switching with reduced losses in industrial and telecom power supplies.

For engineers reviewing the STW22NM60N datasheet, STW22NM60N pinout, STW22NM60N application, or STW22NM60N equivalent, key selection criteria include its 600 V V_DS, 220 mΩ R_DS(on) at 10 V_GS, 44 nC total gate charge, 15 V/ns dv/dt capability, and TO-220FP thermal resistance of 4.17 °C/W (junction-to-case).

Technical Context

This device implements ST's second-generation MDmesh™ vertical strip architecture to minimize conduction and switching losses simultaneously. Its 600 V breakdown voltage and 16 A continuous drain current (at T_C = 25 °C) support operation in universal-input offline converters up to 3 kW.

The MOSFET integrates a robust body diode with 296–350 ns reverse recovery time and 4–4.7 µC Q_rr, enabling reliable operation in bridge configurations without external snubbers. Its 100% unclamped inductive switching (UIS) rating of 6 A / 300 mJ ensures field reliability under transient overloads.

Key Specifications

Pinout & Package

STW22NM60N is housed in a TO-220FP (Full-Pak) package with insulated tab, enabling direct mounting to heatsinks without isolation hardware. The plastic body provides creepage/clearance compliance per IEC 60950-1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP22NM60N, STW22NM60N trades 3.17 °C/W higher junction-to-case thermal resistance for built-in isolation-critical for safety-certified AC/DC designs-while matching electrical specs. Versus IPP60R220C6, it offers documented avalanche robustness at the cost of slightly higher C_oss, making it preferable in industrial PFC and UPS where reliability trumps peak efficiency.

Availability

STW22NM60N is available at Aetrix Electronics and suitable for server power supplies, industrial PFC modules, and telecom rectifiers requiring stable component supply across multi-year production cycles and extended temperature operation.

Supply support for STW22NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

STW22NM60N belongs to the MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-reliability offline power conversion in industrial and telecom infrastructure equipment.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STW22NM60N supports 10 A continuous drain current when the case temperature is maintained at 100 °C, as specified in Table 1 of DS6334 Rev 6. This derating reflects thermal limitations of the TO-220FP package and ensures safe operation within the SOA boundary at elevated temperatures.

Does STW22NM60N have a fully rated body diode for synchronous rectification?

No-the integrated body diode is not rated for continuous synchronous rectification. Its reverse recovery time (296–350 ns) and Q_rr (4–4.7 µC) are optimized for freewheeling in hard-switched topologies, not zero-voltage switching. For synchronous rectification, an external Schottky or dedicated SR controller is required.

Can STW22NM60N be used in a non-isolated buck converter with 400 V input?

Yes-it is rated for 600 V V_DS, providing 50% voltage margin above a 400 V DC bus. However, layout must control dv/dt at the source node to avoid false turn-on, and gate drive must supply ≥10 V with ≤1 Ω series resistance to ensure full enhancement and minimize R_DS(on).

Is the TO-220FP package lead-free and RoHS-compliant?

Yes-STW22NM60N is manufactured in ST's ECOPACK®-compliant TO-220FP package, meeting RoHS Directive 2011/65/EU and REACH SVHC requirements. Full environmental compliance documentation is available via ST's quality portal using order code STW22NM60N.