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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW23N80K5

Name: STW23N80K5
Brand: STMicroelectronics
SKU: STW23N80K5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW23N80K5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW23N80K5.pdf

Description:: MOSFET N-CH 800V 16A TO247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STW23N80K5 from STMicroelectronics is an 800 V, 16 A N-channel high-voltage Power MOSFET in TO-247 package, featuring 230 mΩ typical R_DS(on), 33 nC total gate charge, and 100% avalanche tested ruggedness. It employs MDmesh K5 vertical structure for ultra-low FoM and high power density in offline SMPS, PFC stages, and industrial motor drives.

For engineers reviewing the STW23N80K5 datasheet, STW23N80K5 pinout, STW23N80K5 application, or STW23N80K5 equivalent, key selection criteria include its 800 V breakdown voltage, 4.5 V/ns diode recovery dv/dt rating, 400 mJ single-pulse avalanche energy, and Zener-protected gate-critical for reliable high-voltage switching in harsh environments.

Technical Context

This device uses ST's proprietary MDmesh K5 vertical silicon architecture to achieve simultaneous reduction in R_DS(on) and gate charge-enabling high-efficiency operation at 640 V bus voltages with low conduction and switching losses. Its 100% unclamped inductive avalanche testing ensures robustness under transient overvoltage conditions.

The integrated body diode exhibits 410 ns reverse recovery time (T_J = 25 °C) and 7 µC Q_rr, optimized for hard-switched topologies. Thermal resistance R_thJC is 0.66 °C/W, supporting 190 W continuous dissipation at T_C = 25 °C with appropriate heatsinking.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - Withstands full mains-derived DC bus voltages up to 640 V with margin for transients in AC-DC converters.
R_DS(on) max	280 mΩ at V_GS = 10 V, I_D = 8 A - Enables low conduction loss in high-current PFC and LLC primary switches.
Q_g	33 nC - Reduces driver power demand and enables faster switching with lower EMI in high-frequency designs.
E_AS	400 mJ - Confirmed single-pulse avalanche capability supports reliable operation during short-circuit or overload events.
dv/dt ruggedness	50 V/ns - Ensures immunity to false turn-on during fast voltage transients in bridge configurations.
T_J range	–55 to 150 °C - Supports operation in industrial and outdoor environments with extended thermal cycling.

Pinout & Package

TO-247 package: isolated metal tab (Drain), 3-pin through-hole outline with standard footprint. Tab is electrically connected to Drain (Pin 2); Gate (Pin 1) and Source (Pin 3) are lead-formed for PCB mounting.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal; requires ≤ ±30 V drive; 4.7 Ω intrinsic gate resistance affects switching speed and ringing.
Pin 2 (D, TAB)	Drain (Metal Tab)	Main high-side current path; tab must be electrically isolated from heatsink unless referenced to same potential as Drain.
Pin 3 (S)	Source	Reference node for gate drive; carries full load current and reverse recovery current of internal body diode.

Key Features

Feature	Design Value
Ultra-low gate charge	33 nC total gate charge reduces driver losses and enables >100 kHz switching in high-efficiency SMPS.
Zener-protected gate	Integrated gate-source Zener clamps transients to ±30 V, eliminating need for external gate protection in most applications.
100% avalanche tested	Every unit validated for 400 mJ single-pulse avalanche energy at 25 °C, ensuring production-level ruggedness.
Low FoM (R_DS(on) × Q_g)	~9.2 Ω·nC - Benchmark figure of merit for high-voltage MOSFETs, directly correlating to system efficiency gain.

Applications

Industrial Motor Drives

Server & Telecom PSU

Use Scenario: Three-phase inverter stage in 3–7.5 kW variable-frequency drives operating from 400 VAC input.

IC Role / Device Role / Timing Role: High-side switch in IGBT/MOSFET half-bridge; handles 16 A continuous phase current with 64 A peak surge.

Use Value: 800 V rating provides 2× safety margin over 400 VAC rectified bus; 280 mΩ R_DS(on) limits conduction loss to <1.5 W at full load.

Use Scenario: Active clamp forward or LLC resonant converter in 1–3 kW server power supplies.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier or main switch; operates at 100–300 kHz with zero-voltage switching.

Use Value: 33 nC Q_g minimizes gate drive loss; 410 ns t_rr reduces diode-related switching loss and EMI in hard-switched transitions.

Industrial UPS Systems

EV Charging OBC Stages

Use Scenario: Bidirectional DC-DC stage in 5–10 kVA online UPS handling battery backup and grid regeneration.

IC Role / Device Role / Timing Role: High-voltage isolation switch in DC-link; subjected to repeated 640 V bus transients and polarity reversal.

Use Value: 50 V/ns dv/dt ruggedness prevents spurious turn-on; 100% avalanche test ensures reliability during islanding faults.

Use Scenario: Boost PFC and DC-DC isolation stages in 3.3–6.6 kW on-board chargers for BEVs.

IC Role / Device Role / Timing Role: High-side switch in interleaved boost; exposed to 800 V DC bus and automotive-grade thermal cycling.

Use Value: –55 to 150 °C T_J range meets AEC-Q101 stress requirements; 230 mΩ typ. R_DS(on) maintains >98% efficiency at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTH24N80L	800 V, 24 A, R_DS(on) = 320 mΩ, Q_g = 42 nC, no Zener gate protection	Higher conduction loss; requires external gate clamp; lower switching speed due to higher Q_g	Preferred where cost sensitivity outweighs efficiency targets and external protection is acceptable.
IPP60R190C7	650 V, 24 A, R_DS(on) = 190 mΩ, Q_g = 34 nC, CoolMOS C7 technology	Lower voltage rating limits use to 400 VAC systems; superior R_DS(on)×Q_g but insufficient for 800 V bus	Select only when system DC bus is ≤ 550 V and maximum efficiency at light load is prioritized.

Compared with IXTH24N80L and IPP60R190C7, STW23N80K5 uniquely balances 800 V capability, Zener gate protection, and low FoM-making it optimal for 600–800 V industrial and EV charging applications where both ruggedness and efficiency are non-negotiable.

Availability

STW23N80K5 is available at Aetrix Electronics and suitable for industrial motor drives, telecom power supplies, and EV on-board charger designs requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STW23N80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STW23N80K5 belongs to the MDmesh K5 high-voltage MOSFET product line, engineered specifically for high-efficiency, high-reliability offline power conversion in industrial and renewable energy systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STW23N80K5 supports 10 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS11235 Rev 2. This derating reflects thermal limitations of the TO-247 package and ensures safe operation within SOA boundaries without exceeding 150 °C junction temperature.

Does this MOSFET include an integrated body diode, and what are its key recovery parameters?

Yes, STW23N80K5 features a monolithic source-drain body diode with 410 ns reverse recovery time (t_rr) and 7 µC reverse recovery charge (Q_rr) at T_J = 25 °C, per Table 7. These values increase to 650 ns and 10 µC at 150 °C, critical for snubber design in hard-switched topologies.

Is the TO-247 package lead-free and RoHS-compliant?

Yes, the STW23N80K5 TO-247 package is ECOPACK2-compliant and fully RoHS-compliant, meeting EU Directive 2011/65/EU. ST confirms halogen-free status and lead-free terminations per J-STD-609, with no exemptions applied.

Can STW23N80K5 replace STW20NK80Z in existing designs?

No-STW20NK80Z uses older MDmesh Z technology with 350 mΩ R_DS(on) and 55 nC Q_g. While pin-compatible, STW23N80K5 offers 20% lower R_DS(on) and 40% lower Q_g, enabling higher efficiency but requiring gate drive strength verification due to reduced Miller capacitance and faster switching edges.

STW23N80K5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ K5

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 280mOhm @ 8A, 10V

Vgs(th) (Max) @ Id:: 5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 33 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1000 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 190W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW23N80K5 FAQ

1.How can I place an order for STW23N80K5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STW23N80K5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW23N80K5 reliable?

The price and inventory of STW23N80K5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW23N80K5 is usually 5 days.

3.What payment methods are accepted for STW23N80K5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW23N80K5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW23N80K5?

STW23N80K5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW23N80K5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW23N80K5?

For technical support, including STW23N80K5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW23N80K5 requirements.

6.How does Aetrix verify that STW23N80K5 is sourced from the original manufacturer or authorized distributors?

All STW23N80K5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW23N80K5 meets industry standards.

7.What is the process for return or replacement of STW23N80K5?

All STW23N80K5 units undergo pre-shipment inspection (PSI). If there is an issue with STW23N80K5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW23N80K5 part is unused and in its original packaging.

Return procedure for STW23N80K5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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