My Inquiry
My Account
STMicroelectronics STW23NM50N
- Part No.:
- STW23NM50N
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-247-3
- Datasheet:
-
STW23NM50N.pdf
- Description:
- MOSFET N-CH 500V 17A TO247-3
- Quantity:
- Payment:
- Shipping:
Inventory:8,824
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
STW23NM50N from STMicroelectronics is an N-channel 500 V, 17 A, 0.162 Ω RDS(on) Power MOSFET in TO-247 package, built on MDmesh™ II technology for high-efficiency switching converters. It delivers low gate charge (45 nC), fast switching (td(off) = 71 ns), and 100% avalanche tested ruggedness, enabling use in industrial SMPS, PFC stages, and offline DC-DC converters.
For engineers reviewing the STW23NM50N datasheet, STW23NM50N pinout, STW23NM50N application, or STW23NM50N equivalent, key selection criteria include its 500 V VDS, 0.162 Ω RDS(on) at 10 VGS, 45 nC total gate charge, 125 W power dissipation at TC = 25 °C, and TO-247 thermal resistance of 4.17 °C/W (junction-to-case).
Technical Context
This device uses ST's second-generation MDmesh™ vertical structure with strip layout to minimize conduction and switching losses simultaneously. Its 1330 pF Ciss, 210 pF Coss(eq), and 4.6 Ω gate input resistance support stable high-frequency gate drive in hard-switched topologies.
The integrated source-drain diode features 286 ns reverse recovery time (Tj = 25 °C) and 3700 nC Qrr, enabling moderate-speed synchronous rectification or freewheeling in flyback and LLC resonant converters without external snubbing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 500 V - supports 400 V AC mains-derived bus designs with 20% margin for voltage spikes |
| RDS(on) | 0.162 Ω max at VGS = 10 V, ID = 8.5 A - enables <1.4 W conduction loss at 17 A continuous current |
| Qg | 45 nC - reduces gate driver power demand and enables efficient 100–300 kHz operation with standard 1-A drivers |
| td(off) | 71 ns typ - supports precise timing control in phase-shifted full-bridge and active-clamp forward converters |
| EAS | 254 mJ - withstands unclamped inductive switching events up to 6 A avalanche current without failure |
| Rth(j-c) | 4.17 °C/W - allows 125 W dissipation with ≤525 °C junction rise above case, compatible with standard heatsinks |
Pinout & Package
STW23NM50N is housed in a TO-247 package with isolated mounting tab (VISO = 2500 V RMS). The case serves as the drain terminal, enabling direct heatsink connection without insulating hardware when isolation is not required.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Tab (Case) | Drain (D) | High-current power path; electrically connected to drain; thermally coupled to heatsink |
| Lead 1 | Source (S) | Return path for load current; reference node for gate drive; connects to PCB ground plane |
| Lead 2 | Gate (G) | Control input; requires low-impedance drive due to 4.6 Ω gate resistance and 45 nC charge |
| Lead 3 | Source (S) | Second source connection for reduced loop inductance; paralleled internally with Lead 1 |
Key Features
| Feature | Design Value |
|---|---|
| 100% avalanche tested | Guarantees single-pulse EAS = 254 mJ at 50 V, eliminating need for external clamping in many flyback designs |
| Low Ciss/Coss ratio | Ciss = 1330 pF, Coss(eq) = 210 pF - improves ZVS capability and reduces capacitive turn-on loss in resonant topologies |
| MDmesh™ II vertical structure | Enables 0.162 Ω RDS(on) at 500 V - achieves conduction loss comparable to 400 V devices while maintaining higher voltage safety margin |
| Low gate input resistance | Rg = 4.6 Ω - stabilizes gate waveform against ringing and simplifies RC damping network design |
Applications
| Industrial Switch-Mode Power Supplies | Active Clamp Forward Converters |
|---|---|
|
Use Scenario: Primary-side switch in 500–1000 W telecom rectifiers operating from 3-phase 400 V AC input. IC Role / Device Role / Timing Role: High-voltage, high-current main switching element handling 17 A peak drain current at 100 kHz. Use Value: 0.162 Ω RDS(on) and 45 nC Qg reduce total losses by ≥12% versus prior-gen 500 V MOSFETs at same power level. |
Use Scenario: Main switch in isolated 300 W server VRM with active clamp reset and 250 kHz switching frequency. IC Role / Device Role / Timing Role: Hard-switched primary FET with controlled dV/dt (15 V/ns) during turn-off to limit EMI. Use Value: 71 ns td(off) and 29 ns tf enable precise dead-time control and minimize overlap loss in clamp cycle. |
| Offline LED Driver Power Stages | PFC Boost Controllers |
|
Use Scenario: Primary switch in 150 W constant-current LED driver with universal AC input (90–305 V AC). IC Role / Device Role / Timing Role: High-reliability switching transistor in discontinuous conduction mode (DCM) flyback topology. Use Value: 254 mJ EAS rating eliminates need for TVS clamping across drain-source during output short-circuit events. |
Use Scenario: Boost switch in 1 kW front-end PFC stage for industrial motor drives. IC Role / Device Role / Timing Role: Continuous-conduction-mode (CCM) boost FET conducting 17 A average current at 65 kHz. Use Value: 125 W PTOT and 4.17 °C/W Rth(j-c) allow operation at 100 °C case temperature with standard finned heatsink. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPP60R190C6 | 600 V, 0.19 Ω RDS(on), 39 nC Qg, TO-220FP package | Lower gate charge but higher RDS(on); limited to 11 A continuous at TC = 100 °C | Preferred where board space is constrained and gate drive strength is limited, but thermal headroom is tight |
| STW20NK50Z | 500 V, 0.22 Ω RDS(on), 55 nC Qg, TO-247, Zener-protected gate | Higher RDS(on) and Qg; includes integrated gate protection diode | Chosen when robustness against gate overvoltage transients outweighs efficiency targets |
Compared with IPP60R190C6 and STW20NK50Z, STW23NM50N offers the lowest RDS(on) among 500 V TO-247 MOSFETs in its class, delivering superior conduction efficiency at high current, while maintaining competitive switching performance and proven avalanche ruggedness.
Availability
STW23NM50N is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, active clamp forward converters, offline LED driver power stages, and PFC boost controllers requiring stable component supply and long-term production continuity.
Supply support for STW23NM50N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.
STW23NM50N belongs to the MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching applications such as telecom SMPS, industrial PFC, and lighting ballasts where low RDS(on) and low gate charge are critical.
FAQ
What is the maximum continuous drain current for STW23NM50N at 100 °C case temperature?
The maximum continuous drain current is 11 A at TC = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limits of the TO-247 package and ensures safe operation within the 150 °C maximum junction temperature rating.
Does STW23NM50N have an integrated body diode, and what are its reverse recovery characteristics?
Yes, it includes a monolithic source-drain diode with trr = 286 ns and Qrr = 3700 nC at Tj = 25 °C, ID = 17 A, and di/dt = 100 A/µs. These values increase to trr = 350 ns and Qrr = 4800 nC at Tj = 150 °C, indicating predictable soft recovery behavior across operating temperature range.
Can STW23NM50N be used in avalanche mode, and what is its rated single-pulse energy?
Yes, STW23NM50N is 100% avalanche tested with a rated single-pulse avalanche energy (EAS) of 254 mJ at VDD = 50 V, starting from Tj = 25 °C. This rating applies under defined test conditions (IAR = 6 A, pulse width limited by Tj(max)) and supports reliable operation in unclamped inductive switching scenarios.
What is the gate threshold voltage range, and how does it vary with temperature?
VGS(th) is specified from 2 V to 4 V at TC = 25 °C, with typical value of 3 V. Figure 14 shows normalized VGS(th) decreases linearly with rising junction temperature, dropping to ~85% of room-temperature value at 150 °C - a characteristic that supports stable turn-on behavior across wide thermal ranges.
STW23NM50N Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™ II
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 190mOhm @ 8.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 45 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1330 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 125W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247-3
STW23NM50N FAQ
1.How can I place an order for STW23NM50N through Aetrix?
Please submit a Request for Quotation (RFQ) for STW23NM50N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STW23NM50N reliable?
The price and inventory of STW23NM50N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW23NM50N is usually 5 days.
3.What payment methods are accepted for STW23NM50N?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW23NM50N transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STW23NM50N?
STW23NM50N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STW23NM50N order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STW23NM50N?
For technical support, including STW23NM50N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW23NM50N requirements.
6.How does Aetrix verify that STW23NM50N is sourced from the original manufacturer or authorized distributors?
All STW23NM50N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW23NM50N meets industry standards.
7.What is the process for return or replacement of STW23NM50N?
All STW23NM50N units undergo pre-shipment inspection (PSI). If there is an issue with STW23NM50N, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STW23NM50N part is unused and in its original packaging.
Return procedure for STW23NM50N:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
STW23NM50N Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
