STMicroelectronics STW24N60DM2

Overview

STW24N60DM2 from STMicroelectronics is a high-voltage N-channel Power MOSFET in the MDmesh DM2 fast-recovery diode series, housed in a TO-247 package. It delivers 600 V drain-source voltage rating, 175 mΩ typical R_DS(on), 18 A continuous drain current at T_C = 25 °C, and features fast-recovery body diode with 155 ns typical reverse recovery time (T_J = 25 °C), making it suitable for ZVS phase-shift converters and full-bridge topologies in industrial SMPS.

For engineers reviewing the STW24N60DM2 datasheet, STW24N60DM2 pinout, STW24N60DM2 application, or STW24N60DM2 equivalent, key selection criteria include its 50 V/ns MOSFET dv/dt ruggedness, 29 nC total gate charge, 100% avalanche tested reliability, and low C_oss,eq of 259 pF - all critical for high-efficiency, high-frequency hard-switched and resonant converter designs.

Technical Context

This device implements ST's MDmesh DM2 silicon technology optimized for high-voltage switching with integrated fast-recovery body diode. Its 175 mΩ R_DS(on) at V_GS = 10 V and 9 A, combined with 12 nC Q_gd, enables low conduction loss and reduced switching transition losses in bridge-leg configurations.

The MOSFET supports unclamped inductive switching with 180 mJ single-pulse avalanche energy and exhibits 40 V/ns peak diode recovery dv/dt capability under ISD ≤ 18 A and di/dt ≤ 400 A/μs - enabling robust operation in flyback, LLC, and phase-shifted full-bridge circuits where diode commutation stress is critical.

Key Specifications

Pinout & Package

STW24N60DM2 uses a TO-247 package with isolated tab (drain-connected). The three terminals are arranged linearly: Pin 1 = Gate (G), Pin 2 = Drain (D, connected to metal tab), Pin 3 = Source (S).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Compared with IXFH24N60P and IPP60R190C7, STW24N60DM2 uniquely balances low R_DS(on), fast t_rr, and guaranteed avalanche ruggedness - making it the preferred choice for mission-critical bridge-leg and ZVS converter applications demanding both efficiency and robustness.

Availability

STW24N60DM2 is available at Aetrix Electronics and suitable for industrial SMPS, telecom rectifiers, UPS inverters, and motor drive half-bridge circuits requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STW24N60DM2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STW24N60DM2 belongs to the MDmesh DM2 Power MOSFET product line, engineered specifically for high-efficiency, high-frequency switched-mode power supplies and resonant converters where fast body diode recovery and avalanche robustness are essential.

FAQ

What is the maximum continuous drain current for STW24N60DM2 at 100 °C case temperature?

The maximum continuous drain current is 11 A at T_C = 100 °C, as specified in Table 1 of DS10027 Rev 4. This rating assumes proper heatsinking with R_thJC ≤ 0.83 °C/W and accounts for R_DS(on) increase with junction temperature. Exceeding this current risks thermal runaway due to positive temperature coefficient behavior above 150 °C junction temperature.

Does STW24N60DM2 require an external gate resistor for safe operation?

Yes - a gate resistor (typically 4.7 Ω to 22 Ω) is required to dampen ringing and control dV/dt during switching transitions. The device's 7 Ω intrinsic gate resistance and 29 nC Q_g make it susceptible to oscillation without external series resistance; layout inductance >5 nH further necessitates careful gate loop minimization and resistor placement adjacent to the gate pin.

Can STW24N60DM2 replace STW20N60DM2 in existing designs?

Yes, with verification: STW24N60DM2 has identical 600 V V_DS, lower R_DS(on) (175 mΩ vs. 220 mΩ), and improved t_rr (155 ns vs. 180 ns), but shares the same TO-247 package, pinout, and gate threshold (3–5 V). Layout compatibility is maintained, though gate drive strength should be confirmed given its 29 nC Q_g versus STW20N60DM2's 24 nC.

Is the drain tab of STW24N60DM2 electrically isolated from the package mount surface?

No - the metal tab is internally connected to the drain (Pin 2) and is not electrically isolated. When mounted on a heatsink, a dielectric insulator (e.g., mica washer or silicone pad) rated for ≥600 V isolation must be used unless the heatsink is referenced to the drain potential. Thermal interface material must also maintain electrical isolation while providing ≤0.2 °C·in²/W thermal resistance.