STMicroelectronics STW24N60M2

Overview

STW24N60M2 from STMicroelectronics is an N-channel 600 V, 168 mΩ typ. (190 mΩ max), 18 A Power MOSFET in TO-247 package, built on MDmesh M2 technology. It delivers low gate charge (29 nC), optimized Coss profile (55 pF), and 100% avalanche-tested ruggedness for high-efficiency hard-switched PFC and SMPS stages in industrial power supplies.

For engineers reviewing the STW24N60M2 datasheet, STW24N60M2 pinout, STW24N60M2 application, or STW24N60M2 equivalent, key selection criteria include its 50 V/ns dv/dt ruggedness, 180 mJ single-pulse avalanche energy, Zener-protected gate, and thermal resistance of 0.83 °C/W (junction-to-case) - critical for continuous conduction mode designs operating at elevated ambient temperatures.

Technical Context

This device employs ST's MDmesh M2 strip layout and enhanced vertical structure to simultaneously reduce R_DS(on) and output capacitance while maintaining high voltage blocking. Its low C_oss (55 pF) and C_oss,eq (258 pF) enable faster switching transitions with reduced turn-off losses in high-frequency converters.

The integrated Zener-protected gate ensures ±25 V V_GS tolerance and robustness against transient overvoltage, while the 150 W P_TOT rating at T_C = 25 °C supports high-power density layouts when mounted on heatsinks. Its 332 ns (T_J = 25 °C) and 450 ns (T_J = 150 °C) reverse recovery time reflects optimized body diode performance for synchronous rectification and resonant topologies.

Key Specifications

Pinout & Package

STW24N60M2 is housed in a TO-247 package with isolated tab (drain-connected). The case is electrically connected to the drain terminal, requiring proper insulation when mounted to heatsinks.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP24N60M2, STW24N60M2 offers superior thermal dissipation and higher peak current capability; versus IPP60R190C7, it trades slightly higher Q_g for integrated gate protection and higher dv/dt ruggedness - simplifying design validation in industrial-grade systems.

Availability

STW24N60M2 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, server rectifiers, motor drive inverters, and uninterruptible power systems requiring stable component supply across multi-year production cycles.

Supply support for STW24N60M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

STW24N60M2 belongs to the MDmesh M2 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-reliability AC-DC and DC-DC conversion in industrial and telecom infrastructure.

FAQ

Is STW24N60M2 pin-compatible with other MDmesh M2 variants like STP24N60M2?

No - STW24N60M2 uses TO-247 (3-pin, drain-tab) while STP24N60M2 uses TO-220 (3-pin, drain-tab), and STB24N60M2 uses D²PAK (3-pin, drain-tab). Pin numbering matches (G-D-S), but mechanical footprint, thermal interface, and mounting requirements differ significantly. PCB redesign is required for package substitution.

What is the maximum recommended gate resistor value for reliable switching at 300 kHz?

Based on Q_g = 29 nC and typical 12 V gate drive, a 10 Ω gate resistor limits peak gate current to ~1.2 A and achieves ~300 ns turn-on delay - suitable for 300 kHz operation with adequate margin. For faster switching, 4.7 Ω is validated in ST's reference designs (Figure 15/20), yielding td(on) = 14 ns and tr = 9 ns.

Does STW24N60M2 require external gate protection given its Zener-protected structure?

No external Zener is required for basic overvoltage protection: the internal bidirectional 25 V clamp handles ±25 V V_GS transients. However, a small RC snubber (e.g., 10 Ω + 100 pF) is recommended at the gate-source node to suppress high-frequency ringing induced by layout parasitics in high-dv/dt applications.

Can STW24N60M2 replace older STW20NK50Z in existing 600 V PFC designs?

Yes - STW24N60M2 offers lower R_DS(on) (168 mΩ vs. 250 mΩ), higher I_D (18 A vs. 15 A), and improved C_oss (55 pF vs. 120 pF), directly improving conduction and switching efficiency. Gate threshold (2–4 V) and pinout match, enabling drop-in replacement with verified thermal and SOA margin improvement.