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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW24N60M6

Name: STW24N60M6
Brand: STMicroelectronics
SKU: STW24N60M6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW24N60M6

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW24N60M6.pdf

Description:: MOSFET N-CH 600V TO247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STW24N60M6 from STMicroelectronics is an N-channel 600 V, 17 A MDmesh™ M6 superjunction Power MOSFET in TO-247 package, featuring 162 mΩ typical R_DS(on), 23 nC total gate charge, and 100% avalanche tested ruggedness. It delivers low switching losses and high efficiency in high-frequency hard-switching and resonant topologies including LLC and boost PFC converters.

For engineers reviewing the STW24N60M6 datasheet, STW24N60M6 pinout, STW24N60M6 application, or STW24N60M6 equivalent, key selection criteria include its 15 V/ns diode recovery dv/dt rating, 1.6 V source-drain forward voltage at 17 A, Zener-protected gate, and 0.96 °C/W junction-to-case thermal resistance for high-power density designs.

Technical Context

This MOSFET employs ST's MDmesh™ M6 silicon technology, optimized for high-voltage switching with reduced R_DS(on) per die area and enhanced dynamic performance. Its 960 pF input capacitance (C_iss) and 4.5 pF reverse transfer capacitance (C_rss) support fast, controllable turn-on/turn-off transitions under 480 V bus conditions.

The device integrates a robust body diode with 225 ns reverse recovery time (T_j = 25 °C) and 2.3 µC Q_rr, enabling reliable operation in inductive-load switching circuits. Its ±25 V gate-source voltage rating and 5 Ω intrinsic gate resistance ensure stable drive interface compatibility with standard gate drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports primary-side switching in 400 V AC-input PFC and offline SMPS up to 480 V DC bus
R_DS(on) max	190 mΩ - enables low conduction loss at 17 A continuous drain current (T_case = 25 °C)
Q_g	23 nC - determines gate drive power requirement and switching speed in hard-switched applications
dv/dt ruggedness	50 V/ns - ensures immunity to parasitic turn-on during high-slew-rate commutation events
E_AS	250 mJ - quantifies unclamped inductive switching energy handling capability without failure
R_thj-case	0.96 °C/W - allows 130 W dissipation at T_case = 25 °C, critical for heatsink-limited industrial designs
V_SD	1.6 V @ 17 A - defines forward conduction loss of integrated body diode in synchronous rectification or freewheeling paths

Pinout & Package

TO-247 package: isolated tab (drain), 3-pin through-hole configuration with standard lead spacing and 14.5 mm minimum creepage distance. Mounting hole ØP = 3.6 mm; outline complies with JEDEC TO-247AC.

Pin/Terminal	Circuit Role	Design Meaning
D (Pin 2)	Drain	Main high-side power terminal; electrically connected to metal tab for direct heatsinking and low-inductance layout
G (Pin 1)	Gate	Control input with ±25 V rating; 5 Ω intrinsic resistance affects gate driver loop damping and ringing control
S (Pin 3)	Source	Power return path and gate reference; used as common node for current sensing and gate drive return

Key Features

Feature	Design Value
MDmesh™ M6 silicon technology	Delivers 162 mΩ typ. R_DS(on) at 600 V - 25% lower on-resistance per area vs prior MDmesh generations
Zener-protected gate	Integrated gate oxide protection clamps transients beyond ±25 V, eliminating need for external gate Zener
100% avalanche tested	Each unit validated for single-pulse E_AS = 250 mJ - guarantees ruggedness in unclamped inductive switching
Low C_rss/C_iss ratio	4.5 pF / 960 pF = 0.0047 - minimizes Miller effect, enabling clean turn-off even with moderate gate resistance

Applications

Server PSU Primary Switch

Industrial Boost PFC

Use Scenario: High-efficiency 3.3 kW server power supply operating at 100 kHz with active clamp forward topology.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch handling 400–480 V DC bus and 17 A peak current.

Use Value: 190 mΩ R_DS(on) and 23 nC Q_g reduce combined conduction and switching losses by 18% versus legacy 650 V MOSFETs.

Use Scenario: Three-phase industrial motor drive with active front-end boost PFC stage rated for 15 kW.

IC Role / Device Role / Timing Role: Fast-switching boost switch operating at 50–100 kHz with soft-start and overload protection.

Use Value: 50 V/ns dv/dt ruggedness prevents false triggering during line-voltage transients; 1.6 V V_SD reduces freewheeling loss during zero-crossing intervals.

LLC Resonant Converter

Telecom Rectifier Module

Use Scenario: 1.5 kW telecom rectifier using asymmetric half-bridge LLC with variable frequency control.

IC Role / Device Role / Timing Role: Upper-leg resonant switch subjected to ZVS turn-on and high di/dt recovery stress.

Use Value: 225 ns trr and 2.3 µC Q_rr minimize dead-time loss and diode-induced voltage spikes, improving ZVS margin across load range.

Use Scenario: -48 V distributed power system rectifier with hot-swap and OR-ing functionality.

IC Role / Device Role / Timing Role: High-side OR-ing FET controlling 48 V output bus with reverse-current blocking.

Use Value: 600 V V_DS rating provides 2× safety margin over 48 V bus; Zener-protected gate withstands hot-swap surge transients without external clamping.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R190C7	650 V rating, 190 mΩ R_DS(on), 21 nC Q_g, CoolMOS™ C7 technology	Higher V_DS margin but slightly higher conduction loss at 17 A; optimized for <65 kHz operation	Prefer when system requires >600 V derating headroom or operates below 50 kHz with emphasis on EMI reduction
IXTH14N60L2	600 V, 220 mΩ R_DS(on), 32 nC Q_g, Linear L2 series with extended SOA	Lower dv/dt ruggedness (30 V/ns); superior linear-mode safe operating area for analog control	Choose only if design requires sustained linear-mode operation (e.g., electronic load, adjustable HV bias)

Compared with IPP60R190C7 and IXTH14N60L2, STW24N60M6 offers the best balance of low R_DS(on), fast switching (23 nC Q_g, 50 V/ns dv/dt), and proven avalanche ruggedness-making it optimal for high-frequency, high-reliability 600 V switching where efficiency and transient immunity are prioritized.

Availability

STW24N60M6 is available at Aetrix Electronics and suitable for server PSUs, industrial PFC stages, telecom rectifiers, and LLC resonant converters requiring stable component supply and long-term industrial lifecycle support.

Supply support for STW24N60M6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

This device belongs to the MDmesh™ M6 superjunction MOSFET product line, engineered specifically for high-efficiency, high-frequency AC-DC and DC-DC conversion in enterprise and industrial power systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STW24N60M6 supports 10.7 A continuous drain current at T_case = 100 °C, as specified in Table 1 of DS12730. This derating reflects thermal limits of the TO-247 package and ensures safe operation within the SOA boundary at elevated temperatures without exceeding 150 °C junction temperature.

Does this MOSFET include integrated gate protection?

Yes - the STW24N60M6 features an integrated Zener diode between gate and source, providing ±25 V gate-source voltage clamping. This eliminates the need for external gate protection components in most standard gate driver configurations and improves robustness against ESD and transient overvoltage events.

Can STW24N60M6 be used in zero-voltage switching (ZVS) topologies?

Yes - its 225 ns reverse recovery time (T_j = 25 °C), low Q_rr (2.3 µC), and tightly controlled C_oss (76 pF) make it well-suited for ZVS operation in LLC and phase-shifted full-bridge converters. The fast, predictable body diode recovery enables reliable soft switching across wide load and line ranges.

Is the TO-247 package lead-free and RoHS compliant?

Yes - STW24N60M6 is supplied in an ECOPACK®-compliant TO-247 package meeting RoHS Directive 2011/65/EU and REACH SVHC requirements. The device carries the "ECOPACK2" designation, indicating halogen-free molding compound and lead-free terminations per JEDEC J-STD-020.

STW24N60M6 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ M6

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Tj)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW24N60M6 FAQ

1.How can I place an order for STW24N60M6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STW24N60M6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW24N60M6 reliable?

The price and inventory of STW24N60M6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW24N60M6 is usually 5 days.

3.What payment methods are accepted for STW24N60M6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW24N60M6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW24N60M6?

STW24N60M6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW24N60M6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW24N60M6?

For technical support, including STW24N60M6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW24N60M6 requirements.

6.How does Aetrix verify that STW24N60M6 is sourced from the original manufacturer or authorized distributors?

All STW24N60M6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW24N60M6 meets industry standards.

7.What is the process for return or replacement of STW24N60M6?

All STW24N60M6 units undergo pre-shipment inspection (PSI). If there is an issue with STW24N60M6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW24N60M6 part is unused and in its original packaging.

Return procedure for STW24N60M6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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