STMicroelectronics STW24NM60N

Overview

STW24NM60N from STMicroelectronics is an N-channel 600 V, 17 A Power MOSFET in TO-247 package, fabricated with MDmesh™ II technology. It delivers typ. R_DS(on) = 0.168 Ω at V_GS = 10 V, Q_g = 44 nC, and C_iss = 1330 pF, enabling high-efficiency switching in hard-switched PFC and SMPS primary-side applications.

For engineers reviewing the STW24NM60N datasheet, STW24NM60N pinout, STW24NM60N application, or STW24NM60N equivalent, key selection criteria include avalanche ruggedness (E_AS = 300 mJ), low gate charge for fast switching, thermal resistance (R_thj-case = 1 °C/W), and TO-247 package suitability for high-power conduction and heatsink mounting.

Technical Context

This device uses ST's second-generation MDmesh™ vertical strip architecture to minimize both on-resistance and gate charge simultaneously. Its 600 V V_(BR)DSS rating and 150 °C max junction temperature support operation in industrial and telecom power supplies where voltage margin and thermal robustness are critical.

The integrated source-drain diode features t_rr = 340 ns and Q_rr = 4.6 µC at T_J = 25 °C, enabling reliable performance in inductive switching circuits. The 100% avalanche-tested construction ensures single-pulse energy handling up to 300 mJ without degradation.

Key Specifications

Pinout & Package

STW24NM60N is housed in a TO-247 package with three leads: Gate (G), Drain (D), and Source (S). The metal tab is electrically connected to the Drain terminal and serves as the primary heat transfer path to the heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPP60R190C7 and IXFH32N60P, STW24NM60N offers superior R_DS(on) × Q_g product, guaranteed avalanche capability, and extended thermal operating range-making it optimal for high-reliability, high-efficiency 600 V systems where long-term stability under overload is mandatory.

Availability

STW24NM60N is available at Aetrix Electronics and suitable for telecom rectifier modules, industrial AC-DC power supplies, and motor drive inverter stages requiring stable component supply and long-lifecycle support.

Supply support for STW24NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STW24NM60N belongs to the MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in telecom, server, and industrial power conversion systems demanding low conduction and switching losses.

FAQ

What is the maximum continuous drain current for STW24NM60N at 100 °C case temperature?

The maximum continuous drain current (I_D) is 11 A at T_C = 100 °C, as specified in Table 2 of the datasheet. This rating is thermally limited by junction temperature and assumes proper heatsinking to maintain T_J ≤ 150 °C. At T_C = 25 °C, the rating rises to 17 A.

Does STW24NM60N require negative gate voltage for reliable turn-off?

No. STW24NM60N has a gate threshold voltage (V_GS(th)) of 2–4 V and is fully enhanced at V_GS = 10 V. A gate drive of 0 V is sufficient for turn-off; applying –5 V is unnecessary and not recommended, as the absolute maximum V_GS is ±30 V but negative bias provides no reliability benefit for this device.

Can STW24NM60N replace STP24NM60N in an existing TO-220-based design?

No-direct replacement is not mechanically or electrically viable. STW24NM60N uses TO-247 packaging with different pin spacing, tab orientation, and thermal interface geometry. While electrical specs are closely matched, PCB layout, heatsink mounting, and gate drive loop inductance would require redesign to accommodate TO-247 mechanical dimensions and lower R_thj-case.

What is the safe operating area (SOA) limitation at 100 µs pulse width and 300 V V_DS?

At 100 µs pulse width and V_DS = 300 V, the SOA limits continuous drain current to approximately 10 A for STW24NM60N (per Figure 6). This limit is set by the device's maximum R_DS(on) and thermal time constant-not by secondary breakdown-due to its planar MDmesh™ II structure and robust SOA curve up to 10 ms.