STMicroelectronics STW24NM65N

Overview

STW24NM65N from STMicroelectronics is an N-channel 650 V, 19 A, 0.16 Ω R_DS(on) Power MOSFET in TO-247 package, built on second-generation MDmesh™ technology. It delivers ultra-low gate charge (70 nC) and input capacitance (2500 pF), enabling high-efficiency hard-switching in offline SMPS, PFC stages, and industrial motor drives operating up to 150 °C junction temperature.

For engineers reviewing the STW24NM65N datasheet, STW24NM65N pinout, STW24NM65N application, or STW24NM65N equivalent, this device is selected for high-voltage, high-current switching where low conduction loss, robust avalanche capability (500 mJ), and fast switching (t_r = 10 ns) are critical in 650 V systems.

Technical Context

This MOSFET employs ST's proprietary vertical MDmesh™ structure combined with a strip layout to minimize both R_DS(on) and gate charge simultaneously. Its 650 V V_DSS rating and 150 °C T_J(max) support operation in universal-input AC-DC converters and industrial inverters without derating at elevated ambient temperatures.

The device features 100% unclamped inductive avalanche tested performance, a 1.3 V source-drain diode forward voltage at 19 A, and tightly controlled dynamic parameters including C_oss(eq) = 310 pF and dv/dt immunity of 35 V/ns - all validated under standardized test conditions per JEDEC JESD24-11.

Key Specifications

Pinout & Package

STW24NM65N uses the TO-247 package - a through-hole, 3-pin power package with isolated mounting flange, optimized for high-power thermal dissipation (R_thj-case = 0.78 °C/W) and mechanical robustness in industrial environments.

Key Features

Applications

Availability

STW24NM65N is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, and EV onboard chargers requiring stable component supply across multi-year production cycles.

Supply support for STW24NM65N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing silicon solutions for automotive, industrial, and power applications since 1987.

The STW24NM65N belongs to ST's MDmesh™ Power MOSFET product line - engineered specifically for high-voltage, high-efficiency switching in offline AC-DC conversion, PFC, and motor control systems demanding low R_DS(on) and fast dynamics.

FAQ

What is the maximum continuous drain current for STW24NM65N at 100 °C case temperature?

The maximum continuous drain current is 12 A at T_C = 100 °C, as specified in Table 2 of the datasheet. This reflects thermal limitation of the TO-247 package (R_thj-case = 0.78 °C/W) rather than device intrinsic capability - the silicon supports 19 A continuously at T_C = 25 °C.

Does STW24NM65N have a fully rated body diode for synchronous rectification?

No - while the integrated source-drain diode has t_rr = 460 ns and Q_rr = 7 µC at 25 °C, it is not characterized for continuous bidirectional conduction. Its use in synchronous rectification requires careful dead-time optimization and thermal validation due to higher V_SD (1.3 V) and limited I_SDM pulse rating.

Can STW24NM65N replace STP24NM65N in existing TO-220 layouts?

No - STW24NM65N uses TO-247 packaging with different pin spacing (e.g., 5.45 mm e pitch vs. TO-220's 2.54 mm), larger footprint (19.85 × 15.75 mm vs. 15.75 × 10.40 mm), and non-interchangeable mounting hole locations. Mechanical redesign is required.

Is STW24NM65N suitable for automotive under-hood applications?

No - STW24NM65N is not qualified to AEC-Q101 and lacks automotive-specific stress testing (e.g., HTGB, HTRB). Its 150 °C T_J(max) supports industrial environments but does not meet automotive qualification requirements for under-hood deployment.