STMicroelectronics STW25N80K5

Overview

STW25N80K5 from STMicroelectronics is an N-channel 800 V, 19.5 A high-voltage power MOSFET in TO-247 package, featuring 190 mΩ typical R_DS(on), 40 nC total gate charge, and 100% avalanche-tested ruggedness. It serves as a primary switching device in offline SMPS, PFC stages, and industrial motor drives requiring high efficiency and reliable high-voltage operation.

For engineers reviewing the STW25N80K5 datasheet, STW25N80K5 pinout, STW25N80K5 application, or STW25N80K5 equivalent, key selection criteria include its ultra-low FoM (R_DS(on) × Q_g = 7.6 Ω·nC), Zener-protected gate, and 2.5 kV insulation withstand voltage - critical for isolated high-side switch designs in 800 V DC bus systems.

Technical Context

This MDmesh K5 MOSFET employs a proprietary vertical structure to minimize conduction and switching losses simultaneously. Its 1600 pF C_iss and 25 nC Q_gd enable fast, low-loss hard-switching at 640 V bus voltages with controlled dv/dt (6 V/ns).

The integrated body diode exhibits 515 ns trr and 11 µC Q_rr at 19.5 A, supporting quasi-resonant and ZVS topologies. Thermal resistance R_thJC is 0.5 °C/W, enabling high-power operation with minimal heatsink mass when mounted on external heat sinks.

Key Specifications

Pinout & Package

STW25N80K5 uses the TO-247 package: a through-hole, 3-terminal power package with electrically isolated tab (drain-connected) and industry-standard mounting hole spacing. The case is rated for 2.5 kV RMS insulation from leads to heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP25N80K5, STW25N80K5 delivers 6× better thermal resistance and higher current capability in TO-247, while IPP65R190CFD7 trades voltage rating and ruggedness for improved diode softness at lower voltage classes - making STW25N80K5 the sole option for 800 V, high-reliability industrial switching.

Availability

STW25N80K5 is available at Aetrix Electronics and suitable for industrial motor drives, telecom rectifier modules, and EV onboard charger front-end circuits requiring stable component supply and long-term lifecycle support.

Supply support for STW25N80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STW25N80K5 belongs to the MDmesh K5 high-voltage MOSFET product line, engineered specifically for high-efficiency, high-power-density offline power conversion in 600–800 V applications.

FAQ

What is the maximum continuous drain current for STW25N80K5 at 100 °C case temperature?

The maximum continuous drain current is 12.3 A at T_C = 100 °C, as specified in Table 1 of DS9179 Rev 4. This derating reflects thermal limits under real-world heatsink conditions and must be applied in thermal design calculations - not the 19.5 A rating at 25 °C.

Does STW25N80K5 require external gate protection?

No. STW25N80K5 integrates a Zener diode between gate and source with ±30 V clamping, eliminating the need for external gate protection components in standard industrial drive and PSU applications per datasheet Section 1.

Can STW25N80K5 replace STP25N80K5 in existing TO-220 layouts?

No - STW25N80K5 uses TO-247 packaging with different lead pitch (5.3 mm vs. 2.54 mm), larger outline, and isolated tab mounting requirements. Mechanical redesign and PCB layout changes are mandatory; electrical substitution alone is insufficient.

What is the safe operating area (SOA) limitation at 100 µs pulse width?

At 100 µs, the SOA is limited by R_DS(on) - meaning maximum allowable V_DS is determined by I_D × R_DS(on). For 19.5 A and 190 mΩ, V_DS must stay below ~3.7 V to avoid secondary breakdown, per Figure 5 in DS9179 Rev 4.