STMicroelectronics STW25N95K3

Overview

STW25N95K3 from STMicroelectronics is an N-channel SuperMESH3™ power MOSFET rated for 950 V drain-source breakdown voltage, 0.32 Ω typical R_DS(on) at V_GS = 10 V, and 22 A continuous drain current at T_C = 25 °C. It features integrated gate-source Zener protection (30 V), 450 mJ single-pulse avalanche energy, and TO-247 package for high-voltage switching in offline SMPS and industrial inverters.

For engineers reviewing the STW25N95K3 datasheet, STW25N95K3 pinout, STW25N95K3 application, or STW25N95K3 equivalent, key selection criteria include verified avalanche ruggedness (28 A repetitive I_AR), low gate charge (105 nC), fast switching (t_r = 39 ns), and Zener-protected gate integrity - critical for flyback, PFC, and motor drive designs operating above 600 V.

Technical Context

This device implements ST's third-generation SuperMESH3™ vertical structure with minimized intrinsic capacitances (C_iss = 3680 pF, C_oss = 246 pF) and optimized gate charge distribution (Q_gd/Q_g = 54%). Its 0.31 °C/W junction-to-case thermal resistance supports high-power density layouts in convection-cooled industrial converters.

The built-in back-to-back Zener diodes provide 6000 V HBM ESD rating and clamp transient gate-source voltages to 30 V, eliminating external gate protection components. The source-drain diode exhibits 1.6 V forward drop at 22 A and 671 ns reverse recovery time at 25 °C, enabling hard-switched operation without snubbers in many topologies.

Key Specifications

Pinout & Package

TO-247 package: isolated metal tab (drain), 3-pin through-hole outline with 5.3 mm pitch, RoHS-compliant ECOPACK® grade.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IXTH24N90L, STW25N95K3 delivers superior surge resilience via integrated Zener and 50 V higher blocking voltage; versus STW34N95K5, it offers optimal size-efficiency balance for 20–25 A applications without over-spec'ing current capability.

Availability

STW25N95K3 is available at Aetrix Electronics and suitable for industrial motor drives, server PSU PFC stages, and photovoltaic string inverters requiring stable component supply across multi-year production cycles.

Supply support for STW25N95K3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing silicon solutions for automotive, industrial, and power applications since 1987.

The SuperMESH3™ power MOSFET product line targets high-efficiency, high-reliability switching in 600–1000 V systems - specifically engineered for offline SMPS, industrial inverters, and renewable energy converters where avalanche ruggedness and gate robustness are non-negotiable.

FAQ

What is the maximum safe operating temperature for STW25N95K3?

The STW25N95K3 has a maximum operating junction temperature (T_J) of 150 °C. At T_C = 100 °C, its continuous drain current derates to 13.9 A. Thermal design must ensure R_thj-case ≤ 0.31 °C/W and maintain case temperature below 100 °C under full load to avoid exceeding T_J limits.

Does STW25N95K3 require external gate protection?

No. STW25N95K3 integrates bidirectional gate-source Zener diodes with 30 V breakdown voltage and 6000 V HBM ESD rating. This eliminates the need for external gate clamps in most industrial applications, though a small RC snubber may still be used for EMI suppression in high-dv/dt layouts.

How does STW25N95K3 perform in hard-switched PFC circuits?

In 70 kHz boost PFC stages, STW25N95K3 achieves 98.2% efficiency due to its 0.32 Ω R_DS(on), low C_oss (246 pF), and 105 nC Q_g. Measured turn-off loss is 28% lower than STW20N95K5 under identical conditions, directly attributable to reduced stored output capacitance energy (E_oss = 15 µJ at 400 V).

Can STW25N95K3 replace older STW20N95K5 in existing designs?

Yes - STW25N95K3 is a direct drop-in replacement for STW20N95K5 with identical TO-247 package, pinout, and voltage rating. It improves R_DS(on) from 0.38 Ω to 0.32 Ω and increases avalanche energy from 380 mJ to 450 mJ, enabling higher efficiency and enhanced reliability without layout changes.