STMicroelectronics STW25NM50N

Overview

STW25NM50N from STMicroelectronics is an N-channel 500 V, 22 A, 0.11 Ω R_DS(on) MDmesh™ II Power MOSFET in TO-247 package, designed for high-efficiency switching converters operating at high voltage and moderate current. It features 100% avalanche tested ruggedness, low gate charge (84 nC), and low input capacitance (2565 pF), enabling fast switching in SMPS, PFC stages, and industrial motor drives.

For engineers reviewing the STW25NM50N datasheet, STW25NM50N pinout, STW25NM50N application, or STW25NM50N equivalent, this page delivers verified electrical specs, thermal performance data, real-world switching behavior (t_d(on) = 23 ns, t_off = 97 ns), and validated alternatives for high-voltage power conversion design.

Technical Context

This MOSFET employs ST's second-generation MDmesh™ vertical structure combined with a strip layout to minimize conduction and switching losses simultaneously. Its 500 V V_DSS, 0.11 Ω R_DS(on) @ 10 V, and 84 nC total gate charge reflect optimization for hard-switched topologies up to 100 kHz.

The device integrates a robust body diode with 460 ns reverse recovery time (T_j = 25 °C) and 6.9 µC Q_rr, supporting continuous conduction mode (CCM) operation in boost PFC. Thermal resistance R_thj-case is 0.78 °C/W, enabling 160 W dissipation at T_C = 25 °C with appropriate heatsinking.

Key Specifications

Pinout & Package

STW25NM50N uses the TO-247 package: isolated metal tab (drain), three leads in line (G-D-S), with 16 mm lead spacing and 20.15 mm body length. The drain-connected tab enables direct mounting to heatsink with electrically isolated thermal interface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPP60R099C7 and IXFH32N50P, STW25NM50N offers optimal balance of avalanche ruggedness, thermal capability (160 W), and switching speed for 50–100 kHz high-efficiency converters-making it preferred for mission-critical PFC and server SMPS where reliability and efficiency co-prioritize.

Availability

STW25NM50N is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, telecom rectifiers, solar microinverter auxiliary stages, and EV onboard charger auxiliary supplies requiring stable component supply and long-term manufacturability.

Supply support for STW25NM50N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.

STW25NM50N belongs to the MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in offline AC-DC converters and industrial power supplies where low R_DS(on) and robust avalanche performance are mandatory.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STW25NM50N supports 14 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limitations-not electrical degradation-and assumes proper heatsinking to maintain junction temperature below 150 °C.

Is the TO-247 package electrically insulated?

No-the TO-247 package has an electrically conductive metal tab connected to the drain terminal. Electrical isolation from the heatsink must be achieved using insulating thermal pads or mica washers rated for ≥2500 V RMS, per the V_ISO specification.

Does STW25NM50N support gate drive at 5 V logic levels?

No-it requires ≥10 V gate-source voltage to achieve rated R_DS(on) of 0.11 Ω. At V_GS = 5 V, R_DS(on) rises above 0.3 Ω, increasing conduction loss by >200%; a dedicated 12–15 V gate driver is mandatory for full performance.

How does its body diode performance compare to discrete ultrafast diodes?

The integrated body diode has t_rr = 460 ns and Q_rr = 6.9 µC at 25 °C, outperforming standard FRD diodes (e.g., MUR1520: t_rr ≈ 60 ns but Q_rr > 25 µC). While slower than SiC Schottkys, its low Q_rr makes it viable for medium-frequency PFC where cost and integration outweigh ultrafast requirements.