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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW25NM60N

Name: STW25NM60N
Brand: STMicroelectronics
SKU: STW25NM60N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW25NM60N

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW25NM60N.pdf

Description:: MOSFET N-CH 600V 21A TO247-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STW25NM60N from STMicroelectronics is an N-channel 600 V, 21 A MDmesh™ II Power MOSFET in TO-247 package, featuring 0.130 Ω R_DS(on) at V_GS = 10 V, 84 nC total gate charge, and 100% avalanche tested ruggedness. It serves as a high-voltage switching element in offline SMPS, PFC stages, and industrial motor drives requiring high efficiency and thermal robustness.

For engineers reviewing the STW25NM60N datasheet, STW25NM60N pinout, STW25NM60N application, or STW25NM60N equivalent, key selection criteria include its 600 V V_DSS, low 0.130 Ω on-resistance, 84 nC Q_g, 150 °C T_j(max), and TO-247 thermal performance (R_thj-case = 0.78 °C/W).

Technical Context

This device implements ST's second-generation MDmesh™ vertical superjunction architecture with strip layout, delivering ultra-low R_DS(on) × Q_g figure-of-merit for hard-switched converters. Its 15 V gate threshold (V_GS(th) = 2–4 V) enables reliable turn-on with standard 10–15 V gate drivers.

The integrated body diode exhibits 427 ns reverse recovery time (T_j = 25 °C) and 7.2 µC Q_rr, supporting ZVS-capable topologies. Safe operating area (SOA) is validated up to 84 A pulsed drain current with 150 °C junction limit and 2500 V RMS insulation rating.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - Withstands full mains rectified voltage in 400 V AC input systems without derating.
R_DS(on) max	0.160 Ω @ V_GS = 10 V - Enables <1.8 W conduction loss at 10.5 A DC, critical for high-efficiency PFC.
I_D (cont)	21 A @ T_C = 25 °C - Supports continuous output power >500 W in forced-air-cooled industrial supplies.
Q_g	84 nC - Lowers gate drive power requirement and enables use of cost-effective 1-A peak gate drivers.
R_thj-case	0.78 °C/W - Allows 160 W dissipation at ΔT = 125 °C, enabling compact heatsink design in TO-247 form factor.
E_AS	850 mJ - Guarantees unclamped inductive switching survival in flyback or LLC resonant converters.

Pinout & Package

STW25NM60N uses the industry-standard TO-247 package with isolated mounting flange and 3-pin configuration optimized for high-power thermal and electrical performance.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Accepts 10–15 V logic-level gate drive; 1.6 Ω gate input resistance simplifies RC snubber design.
2 (Drain)	High-side power switch node	Connected to primary HV rail; electrically isolated from case per 2500 V RMS insulation rating.
3 (Source)	Power return / reference node	Serves as local ground reference for gate driver; ties to PCB source plane with low-inductance layout.

Key Features

Feature	Design Value
MDmesh™ II superjunction structure	Reduces R_DS(on) × Q_g by 35% vs. first-gen devices, enabling higher-frequency operation without efficiency penalty.
100% UIS avalanche rated	Guarantees single-pulse energy handling up to 850 mJ, eliminating need for external clamping in inductive switching.
Low C_iss/C_oss ratio	2400 pF/200 pF enables stable high-speed switching with minimal Miller-induced shoot-through risk.
ECOPACK® lead-free construction	Complies with RoHS and JEDEC JESD97; solderable at 300 °C peak temperature without degradation.

Applications

Industrial SMPS

Server PSU

Use Scenario: Primary-side switching in 1–2 kW telecom rectifiers with active PFC + LLC resonant stage.

IC Role / Device Role / Timing Role: High-voltage power switch in boost PFC and half-bridge LLC primary, operating at 65–100 kHz.

Use Value: 0.130 Ω R_DS(on) reduces conduction loss by ~22% vs. comparable 650 V MOSFETs, improving full-load efficiency to >96%.

Use Scenario: Main power switch in redundant 80 PLUS Titanium-certified server power supplies.

IC Role / Device Role / Timing Role: Synchronous rectifier control FET in secondary-side synchronous rectification, driven by dedicated gate controller.

Use Value: 84 nC Q_g allows fast turn-on/turn-off (t_r/t_f = 18/24 ns), minimizing dead-time losses and enabling >1 MHz operation.

Motor Drive Inverter

Induction Heating

Use Scenario: Phase-leg switching in 3-phase 7.5 kW HVAC compressor inverters.

IC Role / Device Role / Timing Role: IGBT replacement in 15–20 kHz hard-switched inverter legs, leveraging low Q_g and avalanche ruggedness.

Use Value: 150 °C T_j(max) and 0.78 °C/W R_thj-case support 100% duty-cycle operation under forced air cooling without thermal throttling.

Use Scenario: Full-bridge switching in 20–50 kHz domestic induction cooktops.

IC Role / Device Role / Timing Role: High-dV/dt switching device subjected to repetitive 15 V/ns voltage transients during zero-crossing commutation.

Use Value: 100% avalanche testing ensures reliability against parasitic oscillations and load mismatch events common in resonant tank circuits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R099C6	650 V, 0.099 Ω R_DS(on), 71 nC Q_g, TO-220FP package, lower R_thj-case (3.1 °C/W)	Higher conduction efficiency but limited to 40 W continuous dissipation; unsuitable for >1 kW designs without parallel devices.	Select when board space is constrained and thermal management uses PCB copper rather than heatsinks.
IXFH32N60P	600 V, 0.145 Ω R_DS(on), 105 nC Q_g, TO-247 package, 125 °C T_j(max)	Higher gate charge increases driver loss; lower junction temperature rating reduces SOA margin at elevated ambient.	Prefer only if legacy design uses identical footprint and existing gate driver supports >1 A peak current.

Compared with IPP60R099C6 and IXFH32N60P, STW25NM60N delivers optimal balance of low R_DS(on), moderate Q_g, and superior thermal capability in TO-247-making it ideal for thermally demanding, medium-to-high power industrial converters where reliability trumps marginal conduction gain.

Availability

STW25NM60N is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, and induction heating systems requiring stable component supply across multi-year production cycles.

Supply support for STW25NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh™ II high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in offline AC-DC converters and industrial motor controls.

FAQ

Is STW25NM60N pin-compatible with other TO-247 N-channel MOSFETs?

Yes-STW25NM60N follows standard TO-247 mechanical dimensions and 3-pin terminal assignment (G-D-S), ensuring direct physical replacement for any TO-247 N-channel MOSFET with matching voltage/current ratings. However, gate charge and R_DS(on) differ, so driver sizing and thermal design must be revalidated.

What is the maximum recommended gate resistor value for hard-switched operation?

For 100 kHz hard-switched operation with 1 A peak gate driver, a 4.7 Ω series gate resistor is specified in the datasheet to achieve t_r = 18 ns and t_f = 24 ns. Increasing beyond 10 Ω risks excessive switching loss; values below 2.2 Ω require careful layout to avoid ringing due to 84 nC Q_g.

Does STW25NM60N support avalanche operation in repetitive mode?

No-the datasheet specifies E_AS = 850 mJ as a single-pulse rating only. Repetitive avalanche is not characterized or guaranteed. System design must ensure all inductive energy is clamped or absorbed externally during every switching cycle to prevent cumulative junction damage.

Can STW25NM60N be used in synchronous rectification applications?

Yes-its low 0.130 Ω R_DS(on) and fast 427 ns body diode recovery make it suitable for secondary-side synchronous rectification in LLC and phase-shifted full-bridge topologies. Gate drive must be precisely timed to avoid cross-conduction, and layout must minimize source inductance to preserve diode softness.

STW25NM60N Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 160mOhm @ 10.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 84 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 2400 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 160W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW25NM60N FAQ

1.How can I place an order for STW25NM60N through Aetrix?

Please submit a Request for Quotation (RFQ) for STW25NM60N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW25NM60N reliable?

The price and inventory of STW25NM60N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW25NM60N is usually 5 days.

3.What payment methods are accepted for STW25NM60N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW25NM60N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW25NM60N?

STW25NM60N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW25NM60N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW25NM60N?

For technical support, including STW25NM60N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW25NM60N requirements.

6.How does Aetrix verify that STW25NM60N is sourced from the original manufacturer or authorized distributors?

All STW25NM60N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW25NM60N meets industry standards.

7.What is the process for return or replacement of STW25NM60N?

All STW25NM60N units undergo pre-shipment inspection (PSI). If there is an issue with STW25NM60N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW25NM60N part is unused and in its original packaging.

Return procedure for STW25NM60N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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