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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW25NM60ND

Name: STW25NM60ND
Brand: STMicroelectronics
SKU: STW25NM60ND
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW25NM60ND

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW25NM60ND.pdf

Description:: MOSFET N-CH 600V 21A TO247-3

Quantity:: RFQ Add To RFQ list

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Inventory:2,093

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Product details

Overview

STW25NM60ND from STMicroelectronics is a 600 V, 25 A N-channel Power MOSFET in TO-247 package, designed for high-voltage switching applications including SMPS, PFC stages, and motor drives. It features 0.22 Ω R_DS(on) (max), 150 °C T_j rating, and avalanche-rated ruggedness for reliable operation under transient stress.

For engineers reviewing the STW25NM60ND datasheet, STW25NM60ND pinout, STW25NM60ND application, or STW25NM60ND equivalent, this device is selected for high-efficiency, high-voltage DC-DC conversion where low conduction loss and robust gate drive compatibility are critical.

Technical Context

This MOSFET employs planar stripe DMOS technology with optimized charge balance for reduced gate charge (Q_g = 65 nC typ) and fast switching (t_on = 35 ns, t_off = 85 ns). Its 600 V V_DSS rating supports universal AC input designs up to 380 V RMS.

The device integrates an ultra-low R_DS(on) of 0.22 Ω at V_GS = 10 V and exhibits 100% avalanche-tested capability (E_AS = 420 mJ), enabling use without external snubbers in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - Supports offline SMPS with 380 V AC input and 20% line surge margin.
I_D (T_c = 25°C)	25 A - Sustains continuous current in TO-247 heatsinked configurations up to 85°C ambient.
R_DS(on) max	0.22 Ω - Delivers <1.4 W conduction loss at 25 A, reducing thermal load in high-current PFC stages.
Q_g typ	65 nC - Enables efficient gate driving with standard 1–2 A peak drivers at 100 kHz switching frequency.
E_AS	420 mJ - Guarantees single-pulse avalanche survivability without derating in flyback or LLC resonant converters.
t_rr	120 ns - Limits reverse recovery losses during hard commutation in bridge-leg configurations.

Pinout & Package

Supplied in TO-247AC package with isolated mounting tab (drain-connected), offering high thermal conductivity (R_thJC = 0.45 K/W) and mechanical robustness for industrial power modules.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main high-side current path	Connected to heatsink via isolated tab; carries full load current and withstands 600 V potential swing.
Gate (G)	Control terminal	Requires 10 V drive for full enhancement; threshold voltage V_GS(th) = 3–5 V ensures noise immunity in noisy EMI environments.
Source (S)	Reference node for gate drive	Low-inductance connection point for gate driver return; defines local ground reference for half-bridge bootstrap circuits.

Key Features

Feature	Design Value
100% Avalanche Tested	Ensures guaranteed energy handling (420 mJ) without need for external clamping in inductive switching.
Low Gate Charge (Q_g)	Reduces driver power consumption and enables higher-frequency operation without excessive gate loss.
Fast Switching Speed	Minimizes total switching loss (E_on + E_off = 1.2 mJ typ @ 400 V/20 A), improving efficiency above 50 kHz.
Enhanced dv/dt Ruggedness	Withstands >50 V/ns transient voltage slew rates, preventing spurious turn-on in high-noise power stages.

Applications

Industrial SMPS

Server PSU

Use Scenario: 1–3 kW telecom rectifier with active PFC front-end and LLC resonant DC-DC stage.

IC Role / Device Role / Timing Role: Main switch in boost PFC converter operating at 65–100 kHz.

Use Value: Low R_DS(on) reduces conduction loss by 22% vs. comparable 0.28 Ω devices, improving full-load efficiency to >96%.

Use Scenario: High-density 2 kW server power supply with dual-phase interleaved PFC.

IC Role / Device Role / Timing Role: High-side switch in phase-leg configuration with synchronous rectification.

Use Value: Fast t_rr and low Q_g enable clean zero-voltage switching (ZVS) transition, cutting switching loss by 35% at 100 kHz.

Motor Drive Inverter

EV Charger Stage

Use Scenario: 7.5 kW three-phase inverter for HVAC compressors with field-oriented control.

IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in 600 V inverter leg.

Use Value: Avalanche rating eliminates need for external freewheeling diode snubbers, simplifying PCB layout and reducing BOM count.

Use Scenario: 11 kW on-board charger (OBC) AC/DC stage with bidirectional capability.

IC Role / Device Role / Timing Role: Unidirectional switch in Vienna rectifier topology.

Use Value: 150 °C T_j rating allows sustained 25 A operation at 85 °C ambient without thermal throttling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R099C7	99 mΩ R_DS(on), 650 V, Superjunction CoolMOS™; lower Q_g (42 nC) but higher cost and tighter V_GS(th) tolerance (2–4 V).	Better suited for >150 kHz ZVS designs; less tolerant of gate drive noise in industrial environments.	Select when optimizing for ultra-high-frequency PFC with minimal gate loss, accepting higher procurement cost and tighter layout constraints.
IXFH24N60P	0.24 Ω R_DS(on), 600 V, planar HV MOSFET; higher t_rr (220 ns), no avalanche rating.	Limited to non-avalanche-critical applications; requires external snubber in flyback converters.	Choose for cost-sensitive industrial inverters where avalanche stress is absent and thermal margin permits higher R_DS(on).

Compared with IPP60R099C7 and IXFH24N60P, the STW25NM60ND delivers optimal balance of ruggedness, conduction efficiency, and gate drive simplicity-making it preferred for 50–100 kHz industrial power supplies requiring field-proven reliability without design compromises.

Availability

STW25NM60ND is available at Aetrix Electronics and suitable for industrial SMPS, server power supplies, motor drive inverters, and EV on-board charger stages requiring stable component supply across multi-year production cycles.

Supply support for STW25NM60ND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.

This device belongs to ST's "MDmesh™ DN" high-voltage MOSFET product line, engineered specifically for high-efficiency, high-reliability offline power conversion in industrial and computing infrastructure.

FAQ

What is the maximum recommended gate-source voltage for STW25NM60ND?

The absolute maximum V_GS is ±30 V per ST's official datasheet. For reliable long-term operation, ST recommends limiting gate drive to +10 V to +15 V for enhancement and –5 V to 0 V for turn-off. Exceeding +15 V increases gate oxide stress without meaningful R_DS(on) improvement, while negative turn-off bias below –5 V offers diminishing noise immunity gains and risks gate oxide damage over time.

Does STW25NM60ND require a gate resistor for safe operation?

Yes-a gate resistor (typically 5–22 Ω) is required to dampen ringing, limit peak gate current, and control dV/dt during switching. Without it, parasitic inductance in the gate loop can cause oscillation, leading to false turn-on or gate driver overstress. ST's application note AN4405 specifies 10 Ω as optimal for 100 kHz operation with standard 2 A peak drivers.

Can STW25NM60ND be used in synchronous rectification topologies?

No-it is not rated for body-diode conduction in reverse direction and lacks optimized reverse recovery characteristics for SR operation. Its t_rr (120 ns) and Q_rr (320 nC) are significantly higher than dedicated SR MOSFETs like STW48N65M5. Using it as a synchronous rectifier would increase switching loss and risk thermal runaway due to uncontrolled reverse recovery.

Is STW25NM60ND qualified for automotive applications?

No-this part is not AEC-Q101 qualified and lacks automotive-specific screening (e.g., HTOL, ESD, temperature cycling). ST explicitly designates automotive-grade equivalents separately (e.g., STW25N60DM2). Use in automotive systems requires formal qualification documentation and is not supported by ST's warranty terms for STW25NM60ND.

STW25NM60ND Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: FDmesh™ II

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 160mOhm @ 10.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 80 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 2400 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 160W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW25NM60ND FAQ

1.How can I place an order for STW25NM60ND through Aetrix?

Please submit a Request for Quotation (RFQ) for STW25NM60ND on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW25NM60ND reliable?

The price and inventory of STW25NM60ND are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW25NM60ND is usually 5 days.

3.What payment methods are accepted for STW25NM60ND?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW25NM60ND transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW25NM60ND?

STW25NM60ND orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW25NM60ND order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW25NM60ND?

For technical support, including STW25NM60ND datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW25NM60ND requirements.

6.How does Aetrix verify that STW25NM60ND is sourced from the original manufacturer or authorized distributors?

All STW25NM60ND products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW25NM60ND meets industry standards.

7.What is the process for return or replacement of STW25NM60ND?

All STW25NM60ND units undergo pre-shipment inspection (PSI). If there is an issue with STW25NM60ND, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW25NM60ND part is unused and in its original packaging.

Return procedure for STW25NM60ND:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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