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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW26N65DM2

Name: STW26N65DM2
Brand: STMicroelectronics
SKU: STW26N65DM2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW26N65DM2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW26N65DM2.pdf

Description:: MOSFET N-CH 650V 20A TO247

Quantity:: RFQ Add To RFQ list

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Inventory:8,342

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Product details

Overview

STW26N65DM2 from STMicroelectronics is a high-voltage N-channel Power MOSFET in the MDmesh DM2 series, featuring 650 V V_BRDSS, 156 mΩ typ. R_DS(on), 20 A continuous drain current, and fast-recovery body diode with 100 ns trr at 25 °C. It is engineered for ZVS phase-shift converters and full-bridge topologies requiring low Q_rr (0.365 µC) and high dv/dt ruggedness (50 V/ns).

For engineers reviewing the STW26N65DM2 datasheet, STW26N65DM2 pinout, STW26N65DM2 application, or STW26N65DM2 equivalent, key selection criteria include avalanche energy rating (530 mJ), gate charge (35.5 nC), thermal resistance (0.74 °C/W), and TO-247 package compatibility with high-power heatsinking.

Technical Context

This MOSFET employs ST's MDmesh DM2 silicon process to simultaneously minimize conduction loss (R_DS(on) = 156 mΩ @ 10 V) and switching loss (Q_gd = 17.6 nC, C_iss = 1480 pF). Its Zener-protected gate and 100% avalanche-tested construction ensure robustness under unclamped inductive switching.

The integrated fast-recovery body diode delivers trr = 100 ns and Q_rr = 0.365 µC at 25 °C - critical for reducing turn-on losses in synchronous rectification and bridge-leg commutation. Junction-to-case thermal resistance of 0.74 °C/W enables reliable operation at 170 W dissipation with proper heatsinking.

Key Specifications

Parameter	Value and Actual Design Meaning
V_BRDSS	650 V - supports 400 V bus designs with 30 % margin against transients
R_DS(on) max	190 mΩ - limits conduction loss to ≤7.6 W at 20 A DC, enabling high-efficiency SMPS
Q_g	35.5 nC - enables fast switching with moderate gate drive strength (e.g., 1–2 A peak)
trr	100 ns @ 25 °C - reduces diode reverse recovery loss in hard-switched bridges
E_AS	530 mJ - withstands single-pulse inductive energy without failure in unclamped tests
dv/dt ruggedness	50 V/ns - prevents spurious turn-on during high-slew-rate voltage transitions
R_thJC	0.74 °C/W - allows junction temperature rise of ≤126 °C at 170 W dissipation with 25 °C case temp

Pinout & Package

Supplied in TO-247 package with isolated tab (drain-connected), standard 3-pin configuration optimized for high-current, high-voltage power stages.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires 10 V drive for full enhancement; Zener-protected to ±25 V
2 (D, Tab)	Drain	Main high-side power terminal; electrically connected to metal tab for low-inductance heatsinking
3 (S)	Source	Power return path; referenced to gate drive ground in low-side configurations

Key Features

Feature	Design Value
Fast-recovery body diode	trr = 100 ns and Q_rr = 0.365 µC at 25 °C - cuts dead-time loss in half-bridge ZVS operation
Low gate charge	Q_g = 35.5 nC - reduces driver power and EMI during 100+ kHz switching
High dv/dt immunity	50 V/ns rated - eliminates false triggering in high-frequency LLC or phase-shifted full-bridge
100% avalanche tested	E_AS = 530 mJ - guarantees ruggedness in unclamped inductive load conditions
Zener-protected gate	V_GS = ±25 V rating - prevents gate oxide damage during layout parasitic coupling or hot-plug events

Applications

Industrial Switch-Mode Power Supplies

Server & Telecom Rectifiers

Use Scenario: 3.3 kW LLC resonant converter operating at 200–300 kHz with 400 V input bus.

IC Role / Device Role / Timing Role: High-side switch in asymmetric half-bridge; handles 20 A RMS current with ZVS-assisted turn-on.

Use Value: Low Q_rr and fast trr reduce body-diode conduction loss by >40 % vs. standard superjunction MOSFETs.

Use Scenario: 12 V/200 A synchronous rectifier stage in 48 V intermediate bus architecture.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier; driven with precise timing to avoid shoot-through.

Use Value: 156 mΩ R_DS(on) minimizes conduction loss while Zener gate protection ensures reliability under transient bus faults.

Phase-Shifted Full-Bridge Converters

Motor Drive Inverters (HV AC)

Use Scenario: 5 kW isolated DC/DC for EV battery charging with variable phase shift control.

IC Role / Device Role / Timing Role: Bridge-leg switch; operates in soft-switching region with controlled dead time.

Use Value: 50 V/ns dv/dt ruggedness prevents false turn-on during rapid V_DS transitions across lagging leg.

Use Scenario: 7.5 kW three-phase inverter for industrial pump drives with 600 V DC link.

IC Role / Device Role / Timing Role: Upper-arm IGBT replacement in 16 kHz PWM inverters.

Use Value: Avalanche-rated construction sustains repetitive short-circuit events up to 3 A for 10 µs without degradation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R041CFD7	R_DS(on) = 41 mΩ lower (115 mΩ typ.), but Q_rr = 0.62 µC - 70 % higher than STW26N65DM2	Better conduction efficiency but higher diode recovery loss in ZVS topologies	Prefer when conduction loss dominates; avoid where trr-sensitive soft-switching is used
IXTH26N65X2	Higher R_DS(on) (220 mΩ max), no specified Q_rr; avalanche rating not published	Limited suitability for bridge-leg commutation due to unknown diode recovery behavior	Acceptable for hard-switched PFC or non-bridged SMPS where diode recovery is uncritical

Compared with IPW65R041CFD7 and IXTH26N65X2, STW26N65DM2 uniquely balances low R_DS(on), ultra-low Q_rr, and verified avalanche ruggedness - making it optimal for ZVS, phase-shift, and high-reliability industrial converters where both switching and fault robustness matter.

Availability

STW26N65DM2 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, server & telecom rectifiers, phase-shifted full-bridge converters, and motor drive inverters requiring stable component supply and long-term production continuity.

Supply support for STW26N65DM2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.

STW26N65DM2 belongs to the MDmesh DM2 high-voltage power MOSFET family, developed specifically for high-efficiency, high-frequency switched-mode power conversion in datacenter, industrial, and renewable energy systems.

FAQ

What is the maximum safe operating junction temperature for STW26N65DM2?

The device is rated for TJ = 150 °C maximum, validated across its safe operating area (SOA) curves. Operation above this limit risks irreversible parametric drift and reduced avalanche endurance. Derating is required above T_case = 100 °C, where ID drops to 12.6 A per datasheet Table 1.

Does STW26N65DM2 require external gate resistors for stability?

Yes - a gate resistor (typically 4.7 Ω) is recommended to dampen ringing caused by gate loop inductance and intrinsic R_g (4.6 Ω). This ensures clean turn-on/turn-off waveforms and avoids unintended oscillation, especially in high-dv/dt environments like full-bridge topologies.

Can STW26N65DM2 replace older STW26NM60FD in existing designs?

No - although both are TO-247 N-channel 600–650 V MOSFETs, STW26N65DM2 has significantly lower Q_rr (0.365 µC vs. 1.1 µC) and faster trr (100 ns vs. 250 ns), requiring gate drive timing adjustments. Direct substitution may cause shoot-through or increased EMI without layout and firmware review.

Is the TO-247 package lead-free and RoHS-compliant?

Yes - STW26N65DM2 is supplied in ECOPACK2-compliant TO-247 packaging, meeting RoHS Directive 2011/65/EU and REACH SVHC requirements. The device carries the "ECOPACK2" marking and is halogen-free per ST's environmental specifications.

STW26N65DM2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ DM2

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 190mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 35.5 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1480 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 170W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW26N65DM2 FAQ

1.How can I place an order for STW26N65DM2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STW26N65DM2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW26N65DM2 reliable?

The price and inventory of STW26N65DM2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW26N65DM2 is usually 5 days.

3.What payment methods are accepted for STW26N65DM2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW26N65DM2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW26N65DM2?

STW26N65DM2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW26N65DM2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW26N65DM2?

For technical support, including STW26N65DM2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW26N65DM2 requirements.

6.How does Aetrix verify that STW26N65DM2 is sourced from the original manufacturer or authorized distributors?

All STW26N65DM2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW26N65DM2 meets industry standards.

7.What is the process for return or replacement of STW26N65DM2?

All STW26N65DM2 units undergo pre-shipment inspection (PSI). If there is an issue with STW26N65DM2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW26N65DM2 part is unused and in its original packaging.

Return procedure for STW26N65DM2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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