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STMicroelectronics STW26NM60

Part No.:
STW26NM60
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-247-3
Datasheet:
AetrixSTW26NM60.pdf
Description:
MOSFET N-CH 600V 30A TO247-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,247

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Product details

Overview

STW26NM60 from STMicroelectronics is an N-channel 600 V, 26 A Zener-protected MDmesh™ power MOSFET in TO-247 package with RDS(on) = 0.125 Ω (typ), 15 V/ns dv/dt capability, and 740 mJ single-pulse avalanche energy. It serves as a high-voltage switching device in offline SMPS, PFC stages, and industrial motor drives requiring robust unclamped inductive switching.

For engineers reviewing the STW26NM60 datasheet, STW26NM60 pinout, STW26NM60 application, or STW26NM60 equivalent, key selection criteria include its 600 V VDSS, 0.125 Ω RDS(on), integrated gate-source Zener protection (±30 V), 73 nC total gate charge, and TO-247 thermal resistance of 0.4 °C/W - all critical for high-efficiency, high-reliability HV converter design.

Technical Context

This MOSFET employs ST's MDmesh™ technology-combining Multiple Drain process and PowerMESH™ horizontal layout-to achieve low conduction loss while maintaining high dv/dt immunity (15 V/ns) and rugged avalanche performance (13 A repetitive IAR, 740 mJ EAS). Its integrated back-to-back gate-source Zener diodes (VZ = 30 V) eliminate external clamping components.

The device delivers low dynamic losses via optimized capacitance profile: Ciss = 2900 pF, Coss = 900 pF, Crss = 40 pF at VDS = 25 V, and fast switching with td(on) = 35 ns, tr = 22 ns, and Qg = 73 nC under 480 V/26 A conditions - enabling high-frequency operation in resonant and hard-switched topologies.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS600 V - supports 400 V AC mains-derived DC bus with 50 % safety margin
RDS(on)0.125 Ω (typ) - enables ≤3.4 W conduction loss at 13 A continuous drain current
ID (TC = 25°C)30 A - rated for high-current primary-side switching in 500–1000 W converters
EAS740 mJ - withstands unclamped inductive energy spikes without failure in PFC or flyback designs
dv/dt Rating15 V/ns - ensures reliable operation during fast voltage transients in high-noise industrial environments
Qg73 nC - determines gate driver power requirement and switching speed trade-off at 100–300 kHz
Rth(j–case)0.4 °C/W - allows 313 W dissipation with ≤125 °C junction rise above 25 °C heatsink temperature

Pinout & Package

TO-247 package: 3-pin through-hole outline with isolated tab (drain-connected). Standard lead configuration: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Gate)Control terminalReceives 10 V logic-level drive; protected by integrated 30 V Zener to prevent overvoltage damage
Pin 2 (Drain / Tab)High-voltage power outputElectrically connected to metal tab; requires insulated mounting for floating applications
Pin 3 (Source)Power return and referenceServes as local ground reference for gate drive; carries full load current and diode recovery current

Key Features

FeatureDesign Value
MDmesh™ silicon architectureReduces RDS(on) × area product by >30 % vs. conventional planar HV MOSFETs
Integrated gate-source Zener diodesEliminates need for external TVS; sustains ±30 V transient without degradation
Low Crss/Ciss ratio (40/2900 pF)Minimizes Miller effect, enabling stable high-speed switching with moderate gate resistance
150 °C max operating junction temperatureSupports sealed or high-ambient industrial enclosures without derating below 100 °C case temp
Unclamped inductive switching ratingValidated for 13 A repetitive avalanche current - enables simplified snubberless design

Applications

Server PSU Primary SwitchIndustrial PFC Boost Stage

Use Scenario: High-density 1U server power supply operating at 100–300 kHz with universal AC input.

IC Role / Device Role / Timing Role: Primary-side hard-switched MOSFET in LLC resonant half-bridge; handles 600 V DC link and 26 A peak current.

Use Value: Low RDS(on) (0.125 Ω) reduces conduction loss by ~25 % vs. legacy 0.17 Ω devices, improving full-load efficiency to ≥94 %.

Use Scenario: Active boost PFC stage in 3 kW industrial motor drive front-end.

IC Role / Device Role / Timing Role: Fast-switching boost switch handling 26 A RMS current and 600 V blocking with 15 V/ns dv/dt immunity.

Use Value: Integrated Zener protection and 740 mJ EAS allow direct replacement of discrete clamp circuits, reducing BOM count by 3 components.

Induction Heating InverterUPS Inverter Output Stage

Use Scenario: 20–50 kHz resonant inverter for domestic induction cooktops.

IC Role / Device Role / Timing Role: Half-bridge switching device managing 26 A pulsed drain current and reverse recovery stress from body diode.

Use Value: Optimized Qrr (7 µC @ 25 °C) and soft recovery characteristics reduce EMI and diode-related switching loss by 18 %.

Use Scenario: Online double-conversion UPS delivering clean 230 V AC output from 400 V DC bus.

IC Role / Device Role / Timing Role: Output H-bridge MOSFET with 600 V rating and avalanche ruggedness for fault-tolerant operation.

Use Value: 13 A repetitive avalanche current rating enables safe shutdown during short-circuit events without external crowbar circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IPP60R120P7XKSA1RDS(on) = 0.120 Ω (lower), but VDSS = 600 V same; no integrated Zener; Ciss = 2520 pFLacks gate-source transient protection - requires external 18 V TVSPreferred where gate drive is tightly regulated and board space allows discrete protection
IXFH32N60PRDS(on) = 0.135 Ω (higher); VDSS = 600 V; EAS = 520 mJ (lower); TO-247 packageLower avalanche energy limits use in unclamped inductive loads without snubbersAcceptable for lower-stress flyback or forward converters where EAS margin is ≥2× required

Compared with IPP60R120P7XKSA1 and IXFH32N60P, STW26NM60 uniquely combines integrated Zener protection, 740 mJ EAS, and 0.125 Ω RDS(on) in a single TO-247 device - simplifying design for rugged, high-density HV SMPS where reliability under transient stress is mandatory.

Availability

STW26NM60 is available at Aetrix Electronics and suitable for server PSUs, industrial PFC modules, induction heating inverters, and UPS output stages requiring stable component supply across multi-year production cycles.

Supply support for STW26NM60 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

The MDmesh™ MOSFET product line targets high-efficiency, high-power-density switched-mode power supplies - specifically engineered to replace older planar technologies in 300–1000 W offline converters.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The STW26NM60 supports 18.9 A continuous drain current at TC = 100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-247 package and must be applied when heatsink temperature exceeds 25°C - ensuring junction temperature remains ≤150°C under steady-state operation.

Does the integrated Zener diode protect against both positive and negative gate transients?

Yes - the device incorporates back-to-back Zener diodes between gate and source, providing symmetrical ±30 V clamping (BVGSO = 30 V min). This protects against both positive gate overvoltage (e.g., from Miller coupling) and negative transients (e.g., from fast turn-off with inductive gate loops), eliminating need for external bidirectional TVS.

Can STW26NM60 be used in zero-voltage switching (ZVS) topologies?

Yes - its low Coss (900 pF) and controlled Qrr (7 µC @ 25°C) support efficient ZVS operation in phase-shifted full-bridge and LLC resonant converters. The soft reverse recovery characteristic minimizes voltage overshoot during turn-on, reducing stress on the device and auxiliary components.

Is the TO-247 package lead-free and RoHS-compliant?

Yes - STW26NM60 is manufactured in a lead-free, RoHS-compliant TO-247 package per STMicroelectronics' standard qualification. The device meets JEDEC J-STD-020 moisture sensitivity level (MSL) 1 and supports lead-free reflow soldering up to 260°C peak temperature, with maximum lead temperature rated at 300°C for 10 seconds.

STW26NM60 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
MDmesh™
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
135mOhm @ 13A, 10V
Vgs(th) (Max) @ Id:
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
102 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
2900 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
313W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-247-3

STW26NM60 FAQ

1.How can I place an order for STW26NM60 through Aetrix?

Please submit a Request for Quotation (RFQ) for STW26NM60 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW26NM60 reliable?

The price and inventory of STW26NM60 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW26NM60 is usually 5 days.

3.What payment methods are accepted for STW26NM60?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW26NM60 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW26NM60?

STW26NM60 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW26NM60 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW26NM60?

For technical support, including STW26NM60 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW26NM60 requirements.

6.How does Aetrix verify that STW26NM60 is sourced from the original manufacturer or authorized distributors?

All STW26NM60 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW26NM60 meets industry standards.

7.What is the process for return or replacement of STW26NM60?

All STW26NM60 units undergo pre-shipment inspection (PSI). If there is an issue with STW26NM60, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW26NM60 part is unused and in its original packaging.

Return procedure for STW26NM60:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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